SUM110N04-03P
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
40
0.0031 at VGS = 10 V
110a
TrenchFET® Power MOSFET
175 °C Junction Temperature
Package with Low Thermal Resistance
Extremely Low Qgd WFETTM Technology for
Low Switching Losses
• 100 % Rg Tested
•
•
•
•
Available
RoHS*
COMPLIANT
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N04-03P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche
Energyb
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
ID
V
110a
110a
IDM
440
IAS
70
EAS
211
PD
Unit
375c
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB
Mountd
Junction-to-Case (Drain)
RthJA
40
RthJC
0.4
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
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1
SUM110N04-03P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VDS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
Forward Transconductancea
4
rDS(on)
gfs
nA
µA
A
0.0025
0.0031
VGS = 10 V, ID = 30 A, TJ = 125 °C
0.0049
VGS = 10 V, ID = 30 A, TJ = 175 °C
0.0059
VDS = 15 V, ID = 30 A
V
30
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
td(on)
c
td(off)
Rise Timec
Turn-Off Delay Time
tr
Fall Timec
6500
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
1400
570
90
VDS = 30 V, VGS = 10 V, ID = 110 A
150
nC
35
22
f = 1 MHz
VDD = 30 V, RL = 0.27 Ω
ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω
tf
0.5
1.1
1.9
145
220
35
55
20
30
55
85
Ω
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
110
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
1.1
1.5
V
60
90
ns
IF = 85 A, di/dt = 100 A/µs
2.5
5
A
0.075
0.22
µC
trr
IRM(REC)
Qrr
A
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72346
S-80274-Rev. C, 11-Feb-08
SUM110N04-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 7 V
200
6V
I D - Drain Current (A)
I D - Drain Current (A)
200
150
100
50
150
100
TC = 125 °C
50
5V
25 °C
- 55 °C
0
0
0
2
4
6
8
0
10
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
240
0.005
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
200
25 °C
160
125 °C
120
80
40
0
0.004
0.003
VGS = 10 V
0.002
0.001
0.000
0
15
30
45
60
75
90
0
20
40
ID - Drain Current (A)
80
100
120
I D - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
8000
VGS - Gate-to-Source Voltage (V)
Ciss
C - Capacitance (pF)
60
6000
4000
Coss
2000
Crss
VDS = 30 V
ID = 110 A
16
12
8
4
0
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
40
0
20
40
60
80
100
120
140
160
Qg - Total Gate Charge (nC)
Gate Charge
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SUM110N04-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
(Normalized)
r DS(on) - On-Resistance
1.6
1.2
0.8
TJ = 150 °C
TJ = 25 °C
10
0.4
1
0.0
- 50
- 25
0
25
50
75
100
125
150
175
0.3
0
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
56
1000
54
ID = 10 mA
52
IAV (A) at TA = 25 °C
V(BR)DSS (V)
I Dav (A)
100
10
50
48
IAV (A) at TA = 150 °C
1
46
0.1
0.00001
0.0001
0.001
0.01
0.1
tin (s)
Avalanche Current vs. Time
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1
44
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
SUM110N04-03P
Vishay Siliconix
THERMAL RATINGS
1000
300
10 µs
Limited by rDS(on)*
250
100 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
200
150
100
1
Package Limited
50
25
50
75
100
125
150
TC = 25 °C
Single Pulse
0.1
0.1
0
0
1 ms
10 ms
DC, 100 ms
10
175
TC - Case Temperature (°C)
1
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72346.
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
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Revision: 01-Jan-2022
1
Document Number: 91000
