New Product
SUM110P08-11
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)b
Qg (Typ)
- 80
0.0111 at VGS = - 10 V
- 110
113 nC
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
TO-263
S
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUM110P08-11 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 80
Gate-Source Voltage
VGS
± 20
TC = 125 °C
TA = 25 °C
71
ID
23.5b, c
13.6b, c
TA = 125 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Maximum Power Dissipation
TA = 25 °C
110a
IS
- 9b, c
IAS
- 75
EAS
281
mJ
375
125
PD
W
13.6b, c
4.5b, c
TA = 125 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 120
TC = 25 °C
TC = 125 °C
V
110a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
b, d
Maximum Junction-to-Case (Drain)
Typical
Maximum
t ≤ 10 sec
RthJA
8
11
Steady State
RthJC
0.33
0.4
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is °C/W.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
1
New Product
SUM110P08-11
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = - 250 µA
- 80
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
V
- 85
mV/°C
7.0
-2
-4
V
± 100
nA
VDS = - 80 V, VGS = 0 V
-1
VDS = - 80 V, VGS = 0 V, TJ = 175 °C
- 500
VDS ≥ 10 V, VGS = - 10 V
120
µA
A
rDS(on)
VGS = - 10 V, ID = - 20 A
0.092
gfs
VDS = - 15 V, ID = - 20 A
80
0.0111
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
700
Total Gate Charge
Qg
185
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
11500
VDS = - 40 V, VGS = 0 V, f = 1 MHz
VDS = - 40 V, VGS = - 10 V, ID = - 110 A
tr
Rise Time
td(off)
Turn-Off Delay Time
nC
40
Ω
f = 1 MHz
3.6
25
40
VDD = - 40 V, RL = 0.36 Ω
ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω
410
620
145
220
470
710
tf
Fall Time
280
45
td(on)
Turn-On Delay Time
pF
790
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
- 110
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 120
IS = - 20 A
IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.5
V
65
100
ns
135
205
nC
43
22
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
New Product
SUM110P08-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
200
180
VGS = 10 V thru 6V
160
30
140
ID - (A)
ID - (A)
120
100
80
20
25 °C
60
10
40
4V
TC = 125 °C
20
- 55 °C
0
0
1
2
0
3
1
2
4
5
VGS - (V)
VDS - (V)
Output Characteristics
Transfer Characteristics
0.020
15000
0.016
12000
Ciss
VGS = 6 V
0.012
CAP - (pF)
RDS - on (Ω)
3
0.008
9000
Coss
6000
VGS = 10 V
0.004
Crss
3000
0.000
0
0
20
40
60
80
100
0
20
40
ID - (A)
Capacitance
2.5
8.0
2.1
rDS(on) - (normalized)
10.0
VDS = 40 V
VGS - (V)
6.0
VDS = 64 V
ID = 20 A
VGS = 10 V
1.7
1.3
0.9
2.0
0.0
0.0
80
VDS - (V)
On-Resistance vs. Drain Current
4.0
60
40.0
80.0
120.0
Qg - (nC)
Gate Charge
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
160.0
200.0
0.5
- 50
- 25
0
25
50
75
100
125
150
175
TJ - (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SUM110P08-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
100
TJ = 150 °C
RDS - (Ω)
IS - (A)
0.04
25 °C
10
0.03
150 °C
0.02
0.01
25 °C
1
0.0
0.00
0.3
0.6
0.9
1.2
1.5
0
2
4
8
10
VGS - (V)
VSD - (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
6000
ID = 1 mA
0.8
5000
4000
0.5
Power (W)
VGS(th) Variance (V)
6
0.2
3000
2000
- 0.1
1000
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.0001
175
TJ - (°C)
0.001
0.01
0.10
1
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Case (TC = 25 °C)
400
1000
*Limited by rDS(on)
350
300
10 µs
100
1 ms
ID (A)
Power (W)
100 µs
250
200
10
10 ms
150
100 ms, DC
100
1
Single pulse
TC = 25 °C
50
0
25
50
75
100
125
150
TC
Power Derating (Junction-to-Case)
www.vishay.com
4
175
0.1
0.1
1
10
VDS - Drain-to-Source Voltage (V)
*VGS > minimum V GS at which rDS(on) is specified
100
Safe Operating Area
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
New Product
SUM110P08-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
120
100
Package Limited
IDav - (A)
ID - (A)
90
60
10
1
30
0
0.1
0
25
50
75
100
125
150
175
0.00001
0.0001
0.001
0.1
1.0
tin - (Sec)
TC - (°C)
Avalanche Current vs. Time
Max Avalanche and Drain Current
vs. Case Temperature
Normalized Effective Transient Thermal Impedance
0.01
1
0.5
0.2
0.1
0.1
0.05
0.02
Single
0.01
0.0001
0.001
0.01
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73472.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
