SUM25P10-138
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) () Max.
ID (A)c
0.138 at VGS = - 10 V
- 16.3
VDS (V)
- 100
0.141 at VGS = - 7.5 V
- 16.1
0.142 at VGS = - 6 V
- 16.1
Qg (Typ.)
24 nC
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
TO-263
• DC/DC Converters
• Motor Control
S
Drain connected to Tab
D
G
G
S
D
Top View
P-Channel MOSFET
Ordering Information:
SUM25P10-138-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current (t = 100 µs)
ID
IDM
Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energya
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating Junction and Storage Temperature Range
V
- 16.7
- 9.6
- 40
IAS
- 25
EAS
31.25
PD
Unit
88.2b
A
mJ
W
3.75
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient Free Air
RthJA
40
Junction-to-Case
RthJC
1.7
°C/W
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. TC = 25 °C
Document Number: 62886
S13-2076-Rev. A, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM25P10-138
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = - 250 µA
- 100
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-2
VDS Temperature Coefficient
VDS/TJ
ID = - 250 µA
- 105
VGS(th)/TJ
ID = - 250 µA
6.6
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = - 100 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
- 200
Drain-Source Breakdown Voltage
VGS(th) Temperature Coefficient
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS= - 5 V, VGS = - 10 V
ID(on)
RDS(on)
gfs
-4
V
mV/°C
± 100
- 20
nA
µA
A
VGS = - 10 V, ID = - 6 A
0.115
0.138
VGS = - 7.5 V, ID = - 6 A
0.117
0.141
VGS = - 6 V, ID = - 6 A
0.118
0.142
VDS = - 15 V, ID = - 6 A
18
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
Rise Timec
Turn-Off Delay Time
c
Turn-On Delay Timec
Rise Timec
Fall
VDS = - 50 V, VGS = - 10 V, ID = - 6.7 A
Timec
40
60
24
36
12.5
VDS = - 50 V, VGS = - 6 V, ID = - 6.7 A
VDD = - 50 V, RL = 10
ID - 5 A, VGEN = - 10 V, Rg = 1
td(off)
2
8
16
7
14
12
20
46
70
tf
40
60
td(on)
12
20
105
160
td(off)
nC
6.7
f = 1 MHz
td(on)
tr
c
pF
105
58
tr
Fall Timec
Turn-Off Delay Time
2110
VGS = 0 V, VDS = - 50 V, f = 1 MHz
VDD = - 50 V, RL = 10
ID - 5 A, VGEN = - 4.5 V, Rg = 1
tf
36
54
34
51
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
- 16.3
Pulsed Current (t = 100 µs)
ISM
- 40
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 5 A, VGS = 0 V
- 0.85
IF = - 5 A, dI/dt = 100 A/µs
220
trr
IRM(REC)
Qrr
A
- 1.5
V
70
105
ns
-7
- 14
A
330
nC
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62886
S13-2076-Rev. A, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM25P10-138
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
25
VGS = 10 V thru 6 V
1.2
ID - Drain Current (A)
ID - Drain Current (A)
20
15
VGS = 5 V
10
5
TC = 25 °C
0.9
0.6
TC = 125 °C
0.3
VGS = 4 V
TC = - 55 °C
0
0
1
2
3
0
4
0
1.5
VDS - Drain-to-Source Voltage (V)
3
4.5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3000
0.21
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2400
0.17
VGS = 10 V, 7.5 V
0.13
VGS = 6 V
0.09
Ciss
1800
1200
600
0.05
0
5
10
15
20
Coss
Crss
0
0
25
20
40
60
80
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
100
2.5
10
ID = 6.7 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
VDS = 25 V
8
VDS = 50 V
6
VDS = 80 V
4
2
VGS = 10 V, 7.5 V, ID = 6 A
2.1
1.7
VGS = 6 V, ID = 6 A
1.3
0.9
0.5
0
0
10
20
30
40
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62886
S13-2076-Rev. A, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
175
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM25P10-138
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.3
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 6A
TJ = 150 °C
10
TJ = 25 °C
1
0.24
TJ = 125 °C
0.18
TJ = 25 °C
0.12
0.06
0.1
0.0
0.2
0.4
0.6
0.8
1.0
4.5
1.2
VSD - Source-to-Drain Voltage (V)
5.6
Source-Drain Diode Forward Voltage
8.9
10
20
TC = 25 °C
ID = 250 μA
gfs - Transconductance (S)
3.3
2.95
2.6
2.25
1.9
- 50
- 25
0
25
50
75
100
125
150
TC = - 55 °C
15
TC = 125 °C
10
5
0
175
0
2
4
TJ - Temperature (°C)
6
8
10
ID - Drain Current (A)
Threshold Voltage
Transconductance
100
100
ID - Drain Current (A)
10
25 °C
IDAV (A)
7.8
On-Resistance vs. Gate-to-Source Voltage
3.65
VGS(th) (V)
6.7
VGS - Gate-to-Source Voltage (V)
10
150 °C
Limited by RDS(on)*
100 μs
1 ms
DC, 10 s 1 s,
100 ms, 10 ms
1
0.1
TC = 25 °C
Single Pulse
1
0.000001
0.00001
0.0001
0.001
Time (s)
Single Pulse Avalanche Capability
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4
0.01
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62886
S13-2076-Rev. A, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM25P10-138
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
128
VDS (V) Drain-to-Source Voltage
ID = 250 μA
ID - Drain Current (A)
15
10
5
122
116
110
104
0
0
25
50
75
100
125
150
98
175
- 50
TC - Case Temperature (°C)
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Current Derating*
Drain Source Breakdown vs. Junction Temperature
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse, 0.02
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62886.
Document Number: 62886
S13-2076-Rev. A, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
