SUM27N20-78-E3

SUM27N20-78 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.078 at VGS = 10 V 27 0.083 at VGS = 6 V 26 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-263 • Isolated DC/DC Converters - Primary-Side Switch D G D S G Top View SUM27N20-78 S Ordering Information: SUM27N20-78-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) ID TC = 125 °C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy TC = 25 °C Maximum Power Dissipationa 60 IAR 18 PD TA = 25 °Cc Operating Junction and Storage Temperature Range V 27 15.5 IDM EAR L = 0.1 mH Unit 16.2 150b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263) Junction-to-Case (Drain) c °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72108 S11-2308-Rev. C, 21-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM27N20-78 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 160 V, VGS = 0 V 1 VDS = 160 V, VGS = 0 V, TJ = 125 °C 50 VDS = 160 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 15 V, VGS = 10 V ID(on) 60 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea RDS(on) Drain-Source on State Resistance a Forward Transconductance 4 µA 0.078 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.160 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.205 VDS = 15 V, ID = 30 A nA A 0.064 VGS = 6 V, ID = 15 A gfs V 0.068 Ω 0.083 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 2150 VGS = 0 V, VDS = 25 V, f = 1 MHz 90 40 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 14 RG 2 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec VDS = 100 V, VGS = 10 V, ID = 20 A td(on) tr td(off) pF 215 VDD = 100 V, RL = 5 Ω ID ≅ 20 A, VGEN = 10 V, RG = 2.5 Ω tf 60 nC 11 Ω 15 25 35 55 40 60 30 45 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 27 Pulsed Current ISM 60 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 20 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, dI/dt = 100 A/µs A 1 1.5 V 115 170 ns 7.5 12 A 0.43 1.02 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72108 S11-2308-Rev. C, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM27N20-78 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 60 60 VGS = 10 thru 7 V 6V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 5V 40 30 20 TC = 125 °C 10 10 25 °C - 55 °C 3 V, 4 V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.16 60 R DS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0 0.12 VGS = 6 V 0.08 VGS = 10 V 0.04 0.00 0 10 20 30 40 50 60 0 10 20 ID - Drain Current (A) 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 3000 V GS - Gate-to-Source Voltage (V) 2500 Ciss C - Capacitance (pF) 30 2000 1500 1000 Crss 500 Coss VDS = 100 V ID = 20 A 16 12 8 4 0 0 0 40 80 120 160 200 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72108 S11-2308-Rev. C, 21-Nov-11 60 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM27N20-78 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 20 A 2.5 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 3.0 2.0 1.5 1.0 TJ = 150 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 260 100 240 IAV (A) at TA = 25 °C V DS (V) I Dav (a) TJ = 25 °C 10 10 1 ID = 1.0 mA 220 200 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72108 S11-2308-Rev. C, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM27N20-78 Vishay Siliconix THERMAL RATINGS 30 100 10 µs Limited by R DS(on) * I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 100 µs 10 1 ms 10 ms 1 100 ms, DC TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 100 1 10 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72108. Document Number: 72108 S11-2308-Rev. C, 21-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000