SUM40012EL-GE3

SUM40012EL www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES TO-263 • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D Top View G APPLICATIONS • Power supply - Secondary synchronous rectification PRODUCT SUMMARY VDS (V) • DC/DC converter 40 RDS(on) max. () at VGS = 10 V 0.00167 • Power tools RDS(on) max. () at VGS = 4.5 V 0.00224 • Motor drive switch Qg typ. (nC) D 130 ID (A) 150 d Configuration Single G • Battery management S N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM40012EL-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed drain current (t = 100 μs) IDM Avalanche current Single avalanche energy a Maximum power dissipation a Operating junction and storage temperature range ID L = 0.1 mH TC = 25 °C TC = 125 °C V 150 d 150 d 300 IAS 50 EAS 125 PD UNIT 150 b 50 b A mJ W TJ, Tstg -55 to +175 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-ambient (PCB mount) c RthJA 40 Junction-to-case (drain) RthJC 1 °C/W Notes a. Duty cycle  1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited S18-1127-Rev. A, 12-Nov-2018 Document Number: 79643 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM40012EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5 Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 30 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 30 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.00139 0.00167 VGS = 4.5 V, ID = 20 A - 0.00186 0.00224 VDS = 15 V, ID = 30 A - 230 - - 10 930 - VGS = 0 V, VDS = 20 V, f = 1 MHz - 2041 - - 101 - Gate threshold voltage On-state drain current a Drain-source on-state resistance a Forward transconductance a ID(on) RDS(on) gfs V nA μA  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Gate-drain charge c Qgs VDS = 20 V, VGS = 10 V, ID = 20 A Qgd - 130 195 - 33.6 - - 6.7 - pF nC Output charge Qoss VDS = 20 V, VGS = 0 V - 64 96 Gate resistance Rg f = 1 MHz 0.36 1.8 3.6 - 25 50 - 12 24 - 65 130 - 18 36 - - 300 A - 0.8 1.5 V c td(on) c tr Turn-off delay time c td(off) Turn-on delay time Rise time Fall time c VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed current (t = 100 μs) Forward voltage a Reverse recovery time Peak reverse recovery charge ISM VSD IF = 10 A, VGS = 0 V trr - 58 116 ns IRM(REC) - 2.1 4.2 A nC IF = 10 A, di/dt = 100 A/μs Reverse recovery charge Qrr - 72 144 Reverse recovery fall time ta - 32 - Reverse recovery rise time tb - 26 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1127-Rev. A, 12-Nov-2018 Document Number: 79643 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM40012EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 200 10000 100 100 VGS = 3 V 50 150 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 150 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 4 V 100 100 50 TC = 25 °C TC = -55 °C TC = 125 °C 0 1 2 3 4 10 0 10 0 0 5. 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 320 10000 0.004 1000 160 100 80 10 60.0 0 0 15.0 30.0 45.0 0.003 1000 VGS = 4.5 V 0.002 VGS = 10 V 100 0.001 10 0 0 50 100 200 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current Axis Title 10000 10 10000 10 000 ID = 20 A Coss 1000 1000 Crss 100 100 10 10 10 20 30 40 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1st line 2nd line 2nd line C - Capacitance (pF) 150 ID - Drain Current (A) Axis Title 0 8 1000 6 VDS = 10 V, 20 V, 32 V 4 100 2 10 0 0 22 44 66 88 110 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S18-1127-Rev. A, 12-Nov-2018 1st line 2nd line TC = 125 °C 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 240 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 132 Document Number: 79643 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM40012EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 1000 VGS = 4.5 V, 20 A 1.2 100 0.9 -50 -25 0 25 50 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.01 10 0.6 10 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 10000 0.005 10000 2.4 ID = 30 A ID = 250 μA 0.004 TJ = 125 °C 0.002 1000 1.6 1st line 2nd line 1000 0.003 2nd line VGS(th) (V) 2.0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1.5 2nd line IS - Source Current (A) VGS = 10 V, 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.8 1.2 100 100 TJ = 25 °C 0.001 0.8 0 2 4 6 8 10 0.4 10 0 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 10000 48 10000 250 47 45 100 44 1000 150 1st line 2nd line 1000 46 2nd line ID - Drain Current (A) 200 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 10 mA Package limited 100 100 50 43 10 42 -50 -25 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 TJ - Junction Temperature (°C) TC - Case Temperature (°C) Drain Source Breakdown vs. Junction Temperature Current De-rating S18-1127-Rev. A, 12-Nov-2018 150 175 Document Number: 79643 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM40012EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 100 10000 1000 Limited by RDS(on) 100 μs a 10 1 ms 100 DC, 10 s, 1 s, 100 ms, 10 ms TC = 25 °C, single pulse BVDSS limited 10 1 0.1 1 10 100 2nd line IDAV - Drain Current Avalanche (A) 1000 100 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 25 °C 150 °C 10 0.00001 0.0001 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified 0.001 0.01 t - Time (s) Single Pulse Avalanche Current Capability vs. Time Normalized Ef fective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual pplication parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79643. S18-1127-Rev. A, 12-Nov-2018 Document Number: 79643 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000