SUM50010E
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Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
TO-263
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
Top View
APPLICATIONS
G
D
• Power supply
- Secondary synchronous rectification
PRODUCT SUMMARY
• DC/DC converter
VDS (V)
60
• Power tools
RDS(on) max. () at VGS = 10 V
0.00175
RDS(on) max. () at VGS = 7.5 V
0.00220
Qg typ. (nC)
141
ID (A)
150 d
Configuration
Single
G
• Motor drive switch
• DC/AC inverter
• Battery management
S
• OR-ing / e-fuse
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and halogen-free
SUM50010E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Avalanche current
Single avalanche energy a
L = 0.1 mH
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
V
150 d
150 d
500
IAS
60
EAS
180
PD
UNIT
375 b
125 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient (PCB mount)
c
Junction-to-case (drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79225
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50010E
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
Gate-body leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 60 V, VGS = 0 V
-
-
1
Zero gate voltage drain current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 60 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS 10 V, VGS = 10 V
120
-
-
A
VGS = 10 V, ID = 30 A
-
0.00145
0.00175
VGS = 7.5 V, ID = 20 A
-
0.00183
0.00220
VDS = 15 V, ID = 30 A
-
120
-
-
10 895
-
VGS = 0 V, VDS = 30 V, f = 1 MHz
-
2420
-
-
85
-
Gate threshold voltage
On-state drain current
a
Drain-source on-state resistance a
Forward transconductance a
ID(on)
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
c
Qg
Gate-source charge c
Gate-drain charge
c
Qgs
VDS = 30 V, VGS = 10 V, ID = 20 A
Qgd
-
141
212
-
43.6
-
-
19.1
-
pF
nC
Output charge
Qoss
VDS = 50 V, VGS = 0 V
-
143
215
Gate resistance
Rg
f = 1 MHz
0.24
1.2
2.4
-
28
56
-
12
24
-
50
100
-
13
26
-
-
250
A
-
0.8
1.5
V
c
td(on)
c
tr
Turn-off delay time c
td(off)
Turn-on delay time
Rise time
Fall time c
VDD = 30 V, RL = 3
ID 10 A, VGEN = 10 V, Rg = 1
tf
ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed current (t = 100 μs)
Forward voltage
a
Reverse recovery time
Peak reverse recovery charge
ISM
VSD
IF = 10 A, VGS = 0 V
trr
-
75
150
ns
IRM(REC)
-
2.8
5.6
A
μC
IF = 34 A, di/dt = 100 A/μs
Reverse recovery charge
Qrr
-
0.12
0.24
Reverse recovery fall time
ta
-
38
-
Reverse recovery rise time
tb
-
37
-
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79225
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50010E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
200
10000
100
VGS = 10 V thru 6 V
100
50
1000
60
1st line
2nd line
100
2nd line
ID - Drain Current (A)
1000
VGS = 5 V
1st line
2nd line
40
100
TC = 25 °C
20
VGS = 4 V
10
0
0
1.0
2.0
3.0
4.0
10
0
5.0
0
1.6
3.2
6.4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
8
Axis Title
Axis Title
10000
TC = -55 °C
10000
0.004
1000
90
60
100
30
10
0
0
10
20
30
40
50
0.003
1000
VGS = 7.5 V
0.002
100
VGS = 10 V
0.001
10
0
0
60
50
Transconductance
On-Resistance vs. Drain Current
10000
10
ID = 20 A
Coss
1000
1st line
2nd line
1000
Crss
100
10
10
30
40
50
60
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
20
8
1000
6
VDS = 15 V, 30 V, 48 V
4
100
2
10
0
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S18-1019-Rev. A, 08-Oct-2018
200
Axis Title
10 000
10
150
ID - Drain Current (A)
10000
0
100
ID - Drain Current (A)
Axis Title
100
1st line
2nd line
TC = 125 °C
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
120
1st line
2nd line
2nd line
gfs - Transconductance (S)
4.8
VDS - Drain-to-Source Voltage (V)
150
2nd line
C - Capacitance (pF)
TC = -55 °C
TC = 125 °C
1st line
2nd line
2nd line
ID - Drain Current (A)
80
150
150
Document Number: 79225
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50010E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
100
1000
1.2
VGS = 7.5 V, 20 A
100
0.9
0.6
-50 -25
0
25
50
10
1000
TJ = 150 °C
1st line
2nd line
1.5
2nd line
IS - Source Current (A)
VGS = 10 V, 30 A
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.8
TJ = 25 °C
1
100
0.1
0.01
10
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
10000
0.006
3.7
10000
ID = 30 A
ID = 250 μA
0.003
3.1
1000
1st line
2nd line
TJ = 125 °C
2nd line
VGS(th) (V)
1000
0.004
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.005
2.5
100
100
0.002
1.9
0.001
TJ = 25 °C
4
6
8
10
1.3
10
0
-50 -25
10
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
Axis Title
10000
70
400
10000
66
64
100
300
1000
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
68
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 250 μA
200
100
Package limited
100
62
10
60
-50 -25
0
25
50
75 100 125 150 175
10
0
0
25
50
75
100
125
TJ - Junction Temperature (°C)
TC - Case Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Current De-rating
S18-1019-Rev. A, 08-Oct-2018
150
175
Document Number: 79225
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50010E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
100
10000
1000
1000
100
Limited by RDS(on)
1st line
2nd line
100 μs
a
1 ms
100
10
10 ms
DC, 10 s,
1 s, 100 ms
TC = 25 °C,
single pulse
BVDSS limited
10
1
0.1
1
10
100
2nd line
IDAV - Drain Current Avalanche (A)
2nd line
ID - Drain Current (A)
IDM limited
25 °C
150 °C
10
0.00001
0.0001
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
0.001
0.01
t - Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
PDM
0.05
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual pplication parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79225.
S18-1019-Rev. A, 08-Oct-2018
Document Number: 79225
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
1
Document Number: 91000
