SUM50020E
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Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
TO-263
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Qgd/Qgs ratio < 0.25
• Operable with logic-level gate drive
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
Top View
G
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
PRODUCT SUMMARY
VDS (V)
• DC/DC converter
60
RDS(on) max. () at VGS = 10 V
• Power tools
0.0022
RDS(on) max. () at VGS = 7.5 V
0.0024
Qg typ. (nC)
• DC/AC inverter
128
ID (A)
120 d
Configuration
Single
G
• Motor drive switch
• Battery management
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and halogen-free
SUM50020E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Avalanche current
L = 0.1 mH
Single avalanche energy a
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
V
120 d
120 d
300
IAS
75
EAS
281
PD
UNIT
375
A
mJ
b
125 b
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient (PCB mount)
c
Junction-to-case (drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S17-1310-Rev. B, 21-Aug-17
Document Number: 75403
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50020E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 60 V, VGS = 0 V
-
-
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 60 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS 10 V, VGS = 10 V
120
-
-
A
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body Leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
IDSS
ID(on)
VGS = 10 V, ID = 30 A
-
0.0018
0.0022
VGS = 7.5 V, ID = 20 A
-
0.0020
0.0024
VDS = 15 V, ID = 30 A
-
145
-
-
11 150
-
VGS = 0 V, VDS = 30 V, f = 1 MHz
-
4255
-
-
420
-
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
c
Gate-source charge c
Gate-drain charge
c
Gate resistance
Turn-on delay time c
Qg
Qgs
-
44
-
-
9
-
f = 1 MHz
0.32
1.6
3.2
-
18
36
Rg
td(on)
tr
Turn-off delay time c
td(off)
Fall time c
128
-
Qgd
c
Rise time
VDS = 30 V, VGS = 10 V, ID = 20 A
VDD = 30 V, RL = 5
ID 10 A, VGEN = 10 V, Rg = 1
tf
-
20
40
-
55
100
-
23
35
pF
nC
ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed current (t = 100 μs)
ISM
Forward voltage a
VSD
Reverse recovery time
Peak reverse recovery charge
Reverse recovery charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 39 A, di/dt = 100 A/μs
-
-
300
A
-
0.8
1.5
V
-
120
180
ns
-
5.5
11
A
-
0.320
0.480
μC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1310-Rev. B, 21-Aug-17
Document Number: 75403
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50020E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
200
10000
100
100
50
0
10
0.5
1
1.5
TC = 125 °C
40
100
TC = -55 °C
20
VGS = 4 V
0
0
10
0
2
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
0.0035
TC = 25 °C
1st line
2nd line
1000
90
TC = 125 °C
100
45
0
0
6.0
12.0
18.0
24.0
10
30.0
10000
0.003
1000
0.0025
1st line
2nd line
TC = -55 °C
2nd line
RDS(on) - On-Resistance (Ω)
10000
135
6
Axis Title
Axis Title
180
2nd line
gfs - Transconductance (S)
1000
TC = 25 °C
60
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
80
150
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 10 V thru 5 V
VGS = 7.5 V
0.002
100
VGS = 10 V
0.0015
0.001
10
0
20
40
60
80
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
100
Axis Title
13000
10
10000
10000
Coss
5200
100
2600
Crss
0
10
0
15
30
45
60
ID = 20 A
VDS = 30 V
8
1000
6
1st line
2nd line
1000
7800
1st line
2nd line
2nd line
C - Capacitance (pF)
10400
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
4
100
2
0
10
0
35
70
105
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S17-1310-Rev. B, 21-Aug-17
140
Document Number: 75403
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50020E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
3.2
10000
ID = 30 A
10000
VGS = 10 V
2.8
VGS = 7.5 V
1.1
1000
2.4
1st line
2nd line
1000
1.3
2nd line
VGS(th) (V)
1.5
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.7
ID = 5 mA
2.0
100
100
ID = 250 μA
0.9
1.6
0.7
1.2
10
-50 -25
0
25
50
75 100 125 150 175
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
VDS (V) Drain-to-Source Voltage
ID = 250 μA
0.005
1000
0.004
TJ = 25 °C
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
74
10000
0.006
0.003
TJ = 150 °C
0.002
100
0.001
0
10
2
4
6
8
72
70
68
66
64
- 50
10
- 25
0
25
50
75
100
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
2nd line
Axis Title
100
0.01
0.001
10
0.2
0.4
0.6
0.8
1.0
1.2
255
1000
1st line
2nd line
0.1
2nd line
ID - Drain Current (A)
1000
1st line
2nd line
2nd line
IS - Source Current (A)
TJ = 150 °C
TJ = 25 °C
10000
340
10000
0
170
100
Package limited
85
0
10
0
25
50
75
100
125
VSD - Source-to-Drain Voltage (V)
2nd line
TC - Case Temperature (°C)
2nd line
Source Drain Diode Forward Voltage
Current De-rating
S17-1310-Rev. B, 21-Aug-17
175
Axis Title
100
1
150
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
10
125
150
175
Document Number: 75403
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50020E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDM Limited
100 us
ID Limited
10
1 ms
10 ms
Limited by RDS(on)*
1
IDAV (A)
ID - Drain Current (A)
100
25 °C
100 ms
DC
0.1
150 °C
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
10
0.00001
1
10
100
VDS - Drain- to- Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
0.0001
0.001
0.01
Time (s)
Safe Operating Area
Single Pulse Avalanche Current Capability vs. Time
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-1310-Rev. B, 21-Aug-17
Document Number: 75403
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50020E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75403.
S17-1310-Rev. B, 21-Aug-17
Document Number: 75403
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
1
Document Number: 91000
