SUM50P10-42
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) () Max.
ID (A)
0.042 at VGS = - 10 V
- 36
0.047 at VGS = - 4.5 V
- 29
Qg (Typ.)
54
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
• ORing
TO-263
S
G
G D S
Top View
D
Ordering Information:
SUM50P10-42-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 300 µs)
Avalanche Current
a
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
ID
- 30
- 40
IAS
- 40
PD
V
- 36
IDM
EAS
Unit
80
125b
18.8
A
mJ
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
1.2
°C/W
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50P10-42
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0, ID = - 250 µA
- 100
VGS(th)
VDS = VGS, ID = - 250 µA
-1
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
-3
VDS = 0 V, VGS = ± 20 V
± 250
VDS = - 100 V, VGS = 0 V
-1
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
a
On-State Drain Current
Drain-Source On-State Resistancea
Forward Transconductancea
VDS- 10 V, VGS = - 10 V
ID(on)
RDS(on)
gfs
V
nA
µA
- 250
- 40
A
VGS = - 10 V, ID = - 14 A
0.035
0.042
VGS = - 4.5 V, ID = - 13 A
0.039
0.047
VDS = - 20 V, ID = - 14 A
55
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4600
VGS = 0 V, VDS = - 50 V, f = 1 MHz
VDS = - 50 V, VGS = - 10 V, ID = - 14 A
106
160
54
81
14
VDS = - 50 V, VGS = - 4.5 V, ID = - 14 A
VDD = - 50 V, RL = 5
ID = - 10 A, VGEN = - 10 V, Rg = 1
0.9
4.6
9.2
15
25
20
30
110
165
tf
100
150
td(on)
42
65
160
240
100
150
100
150
td(off)
tr
td(off)
VDD = - 50 V, RL = 10
ID = - 10 A, VGEN = - 4.5 V, Rg = 1
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
IS
- 36
Pulsed Current
- 40
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 10 A, VGS = 0
trr
IRM(REC)
Qrr
ns
ns
b
ISM
Continuous Current
nC
26
f = 1 MHz
td(on)
tr
pF
230
175
IF = - 10 A, dI/dt = 100 A/µs
A
- 0.8
- 1.2
V
60
90
ns
2
3
A
150
225
nC
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50P10-42
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.045
40
RDS(on) - On-Resistance (Ω)
VGS = 10 V thru 4 V
ID - Drain Current (A)
30
20
10
0.040
VGS = 4.5 V
0.035
VGS = 10 V
0.030
VGS = 3 V
0.025
0
0
0.5
1
1.5
0
2
10
20
30
40
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Drain to Source Voltage vs. ID
On-Resistance vs. Drain Current
20
0.080
ID = 14 A
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
15
10
TC = 25 °C
5
0.065
TJ = 125 °C
0.050
TJ = 25 °C
0.035
TC = 125 °C
TC = - 55 °C
0
0
0.7
1.4
2.1
2.8
VGS - Gate-to-Source Voltage (V)
0.020
2
3.5
Transfer Characteristics
6
8
10
On-Resistance vs. Gate-to-Source Voltage
10
100
ID = 14 A
TC = - 55 °C
TC = 25°C
VGS - Gate-to-Source Voltage (V)
80
gfs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
60
TC = 125°C
40
20
8
VDS = 50 V
6
VDS = 25 V
4
VDS = 80 V
2
0
0
0
10
20
30
40
0
30
60
90
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
Transconductance
Gate Charge
Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
120
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50P10-42
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.3
100
ID = 250 μA
10
VGS(th) (V)
IS - Source Current (A)
2
TJ = 150 °C
TJ = 25 °C
1
1.7
1.4
1.1
0.8
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
125
150
175
125
150
175
130
7500
VDS (V) Drain-to-Source Voltage
ID = 250 μA
C - Capacitance (pF)
6000
Ciss
4500
3000
1500
124
118
112
106
Coss
Crss
100
- 50 - 25
0
0
5
10
15
20
0
25
VDS - Drain-to-Source Voltage (V)
50
75
100
TJ - Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.4
40
VGS = 10 V
2.0
30
ID - Drain Current (A)
RDS(on) - On-Resistance (Normalized)
ID = 14 A
1.6
VGS = 4.5 V
1.2
20
10
0.8
0.4
- 50
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
125
TJ - Junction Temperature (°C)
TC - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
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150
175
Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM50P10-42
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
Limited by RDS(on)*
IDAV (A)
TJ = 150 °C
ID - Drain Current (A)
10
TJ = 25 °C
10
100 μs
1 ms
10 ms
1
DC, 1s, 100 ms
0.1
TC = 25 ° C
Single Pulse
1
BVDSS Limited
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
0.1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 1.2 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67933.
Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
