SUM52N20-39P-E3

SUM52N20-39P Vishay Siliconix New Product N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.038 at VGS = 15 V 52 0.039 at VGS = 10 V 52 Qg (Typ) 81 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply - Primary Side • Lighting • Industrial D TO-263 G G D S S Top View N-Channel MOSFET Ordering Information: SUM52N20-39P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V 52 32.5 IDM 100 IAS 25 EAS 31 A mJ b PD 250 3.12 W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.5 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 74297 S-62449-Rev. A, 27-Nov-06 www.vishay.com 1 SUM52N20-39P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2.5 Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS 4.5 VDS = 0 V, VGS = ± 20 V ± 100 VDS = 0 V, VGS = ± 25 V ± 300 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 100 °C 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS ≥ 10 V, VGS = 10 V ID(on) rDS(on) µA A VGS = 10 V, ID = 20 A 0.031 0.039 VGS = 15 V, ID = 20 A 0.0305 0.038 0.071 VGS = 10 V, ID = 20 A, TJ = 150 °C 0.094 VDS = 15 V, ID = 20 A nA 250 50 VGS = 10 V, ID = 20 A, TJ = 100 °C gfs V 25 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time 4220 VGS = 0 V, VDS = 25 V, f = 1 MHz 185 VDS = 100 V, VGS = 15 V, ID = 50 A VDS = 100 V, VGS = 10 V, ID = 50 A Fall Timec td(off) 123 185 81 122 21 f = 1 MHz VDD = 100 V, RL = 2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics (TC = 25 1.2 1.8 18 30 170 260 34 51 9 18 IS 52 ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Ω ns °C)b Pulsed Current Continuous Current nC 27 td(on) tr c pF 400 IF = 20 A, VGS = 0 V A 0.86 1.5 V trr 133 200 ns IRM(REC) 8 12 A 0.54 0.81 µC Qrr IF = 40 A, di/dt = 100 A/µs Reverse Recovery Fall Time ta 94 Reverse Recovery Rise Time tb 39 nS Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74297 S-62449-Rev. A, 27-Nov-06 SUM52N20-39P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 80 I D - Drain Current (A) I D - Drain Current (A) VGS = 15, 12, 10, 8, 6 V 60 40 20 80 60 TC = 125 °C 40 25 °C 20 5V - 55 °C 0 0 0 3 6 9 12 15 0 VDS - Drain-to-Source Voltage (V) 2 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.045 120 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 4 25 °C 90 125 °C 60 30 0.041 0.037 VGS = 10 V 0.033 VGS = 15 V 0.029 0 0.025 0 10 20 30 40 50 60 0 20 I D - Drain Current (A) 40 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 0.09 5600 ID = 20 A 4480 C - Capacitance (pF) r D S - On-Resistance (Ω) 0.07 150 °C 0.06 0.05 0.04 Ciss 3360 2240 Crss 1120 25 °C Coss 0.03 0 0 3 6 9 12 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 74297 S-62449-Rev. A, 27-Nov-06 15 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM52N20-39P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 2.9 ID = 20 A ID = 50 A 12 2.4 rDS(on) - On-Resiistance (Normalized) V GS - Gate-to-Source Voltage (V) VDS = 50, 100, 150 V 9 6 3 VGS = 10 V 1.9 VGS = 15 V 1.4 0.9 0 0 30 60 90 120 0.4 - 50 150 - 25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.7 100 0.2 V GS(th) Variance (V) 10 I S - Source Current (A) 0 TJ =150 °C 1 TJ = 25 °C 0.1 0.01 ID = 5 mA - 0.3 - 0.8 ID = 250 µA - 1.3 - 1.8 - 2.3 - 50 0.001 0.0 0.2 0.4 0.6 0.8 1.2 1.0 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Source-Drain Diode Forward Voltage 100 250 I D = 10 mA 240 I Dav A V(BR)VDSS (nomalized) 230 220 150 °C 25 °C 10 210 200 190 - 50 - 25 0 25 50 75 100 125 TJ - Temperature Junction (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 150 175 1 0.00001 0.0001 0.001 0.01 0.1 t av - (Sec) Single Pulse Avalanche Current Capability vs. Time Document Number: 74297 S-62449-Rev. A, 27-Nov-06 SUM52N20-39P Vishay Siliconix THERMAL RATINGS 1000 60 100 I D - Drain Current (A) I D - Drain Current (A) 48 36 24 *Limited by rDS (on) 100 µs 10 1 ms TC = 25 °C Single Pulse 1 10 ms 100 ms DC 12 0.1 0 0 25 50 75 100 125 150 0.1 TC - Case Temperature (°C) 100 1 10 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS (on) is specified Safe Operating Area Maximum Drain Curent vs. Case Temperature 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74297 Document Number: 74297 S-62449-Rev. A, 27-Nov-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1