SUM70101EL
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Vishay Siliconix
P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
TO-263
• TrenchFET® power MOSFET
• Package with low thermal resistance
• Maximum 175 ºC junction temperature
• Low RDS(on) minimizes power loss from conduction
• Compatible with logic-level gate driving
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Top View
• 100 % Rg and UIS tested
G
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
-100
RDS(on) max. () at VGS = -10 V
0.0101
RDS(on) max. () at VGS = -4.5 V
0.0150
Qg typ. (nC)
125
ID (A)
-120
Configuration
S
• Battery protection
• Motor drive control
G
• Load switch
P-Channel MOSFET
Single
D
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and halogen-free
SUM70101EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-100
Gate-source voltage
VGS
± 20
Continuous drain current d
(TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed drain current (100 μs)
Avalanche current
Single pulse avalanche energy a
Power dissipation
ID
IDM
L = 0.1 mH
TC = 25 °C
TC = 125 °C b
Operating junction and storage temperature range
-78
-240
IAS
-75
281
PD
V
-120
EAS
c
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
TYPICAL
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case
PCB mount b
°C/W
Notes
a. Duty cycle 1 %
b. When mounted on 1" square PCB (FR4 material)
c. See SOA curve for voltage derating
d. Limited by package
S17-0257-Rev. A, 20-Feb-17
Document Number: 77605
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70101EL
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VDS = -100 V, VGS = 0 V
-
-
-1
VDS = -100 V, VGS = 0 V, TJ = 125 °C
-
-
-50
VDS = -100 V, VGS = 0 V, TJ = 175 °C
-
-
-250
VDS -5 V, VGS = -10 V
-120
-
-
A
VGS = -10 V, ID = -30 A
-
0.0081
0.0101
VGS = -4.5 V, ID = -20 A
-
0.0114
0.0150
VDS = -15 V, ID = -25 A
-
60
-
-
7000
-
-
2180
-
-
170
-
-
125
190
-
29
-
-
30
-
1.3
6.5
13
-
20
30
-
40
60
-
110
200
-
40
60
IDSS
ID(on)
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
VDS = -50 V, VGS = -10 V, ID = -110 A
Rg
Turn-on delay time c
Rise time c
Turn-off delay time
VGS = 0 V, VDS = -50 V, f = 1 MHz
tr
c
Fall time c
f = 1 MHz
td(on)
td(off)
VDD = -50 V, RL = 0.71
ID -70 A, VGEN = -10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics (TC = 25 °C b)
Continuous current
IS
-
-
-110
Pulsed current
ISM
-
-
-240
Forward voltage a
VSD
-
-1
-1.5
V
-
110
170
ns
-
-7
-11
A
-
0.38
0.57
μC
Reverse recovery time
Peak reverse recovery charge
Reverse recovery charge
IF = -85 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = -85 A, dI/dt = 100 A/μs
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0257-Rev. A, 20-Feb-17
Document Number: 77605
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70101EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
160
VGS = 10 V thru 5 V
96
ID - Drain Current (A)
ID - Drain Current (A)
128
96
VGS = 4 V
64
72
TC = 25 °C
48
24
32
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
0
15
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
Output Characteristics
0.030
100
TC = - 55 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
0.024
TC = 25 °C
80
60
TC = 125 °C
40
0.018
VGS = 4.5 V
0.012
VGS = 10 V
0.006
20
0.000
0
0
7
14
21
ID - Drain Current (A)
28
0
35
40
60
80
100
120
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
12 000
VGS - Gate-to-Source Voltage (V)
10
9600
C - Capacitance (pF)
20
7200
Ciss
4800
Coss
2400
Crss
0
ID = 70 A
VDS = 50 V
8
6
4
2
0
0
20
40
60
80
100
0
30
60
90
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S17-0257-Rev. A, 20-Feb-17
120
150
Document Number: 77605
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70101EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 30 A
VGS = 10 V
1.8
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
1.5
VGS = 4.5 V
1.2
0.9
1
TJ = 25 °C
0.1
0.01
0.6
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
1.2
1.2
0.10
0.9
0.08
ID = 250 μA
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.06
0.04
TJ = 150 °C
0.02
0.6
ID = 5 mA
0.3
0.0
- 0.3
TJ = 25 °C
- 0.6
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 50 - 25
10
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 110
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
- 114
- 118
- 122
- 126
- 130
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S17-0257-Rev. A, 20-Feb-17
Document Number: 77605
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70101EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
100 μs
IDM Limited
1 ms
10
ID Limited
Limited by RDS(on)*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
10 ms
100 ms, 1 s,
10 s, DC
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-0257-Rev. A, 20-Feb-17
Document Number: 77605
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM70101EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77605.
S17-0257-Rev. A, 20-Feb-17
Document Number: 77605
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 09-Jul-2021
1
Document Number: 91000
