SUM90100E
www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
TO-263
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
Top View
G
APPLICATIONS
D
• Switching power supply
• DC/DC converter
PRODUCT SUMMARY
• Power tools
VDS (V)
200
RDS(on) max. (Ω) at VGS = 10 V
0.0114
RDS(on) max. (Ω) at VGS = 7.5 V
0.0129
Qg typ. (nC)
56.7
d
ID (A)
150
Configuration
Single
• Motor drive switch
G
• DC/AC inverter
• Battery management
• OR-ing / e-fuse
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and halogen-free
SUM90100E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
200
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Avalanche current
Single avalanche energy a
L = 0.1 mH
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
V
150 d
150 d
250
IAS
70
EAS
245
PD
UNIT
375 b
125 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient (PCB mount)
c
Junction-to-case (drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Duty cycle ≤ 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S21-0065-Rev. A, 01-Feb-2021
Document Number: 63039
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90100E
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
Gate-body leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 200 V, VGS = 0 V
-
-
1
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 200 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS ≥ 10 V, VGS = 10 V
120
-
-
A
VGS = 10 V, ID = 16 A
-
0.0095
0.0114
VGS = 7.5 V, ID = 13 A
-
0.0099
0.0129
VDS = 15 V, ID = 13 A
-
85
-
-
3930
-
VGS = 0 V, VDS = 100 V, f = 1 MHz
-
450
-
-
12
-
Gate threshold voltage
On-state drain current
a
Drain-source on-state resistance a
Forward transconductance a
ID(on)
RDS(on)
gfs
V
nA
μA
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
c
Gate-source charge c
Gate-drain charge
c
Gate resistance
72.8
110
-
19.4
-
-
19.0
-
f = 1 MHz
0.7
3.5
7.0
-
20
40
-
50
100
-
60
120
-
18
36
-
-
250
Qgd
Rg
Turn-on delay time c
td(on)
c
tr
Turn-off delay time c
td(off)
Rise time
VDS = 100 V, VGS = 10 V, ID = 16 A
Qg
Qgs
Fall time c
VDD = 80 V, RL = 6.2 Ω
ID ≅ 13 A, VGEN = 10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Ratings and Characteristics
Pulsed current (t = 100 μs)
Forward voltage
a
Reverse recovery time
Peak reverse recovery charge
b
nC
Ω
ns
(TC = 25 °C)
ISM
VSD
pF
IF = 10 A, VGS = 0 V
trr
IRM(REC)
IF = 13 A, di/dt = 100 A/μs
A
-
0.8
1.5
V
-
118
177
ns
-
9.4
14.1
A
μC
Reverse recovery charge
Qrr
-
0.632
0.948
Reverse recovery fall time
ta
-
94
-
Reverse recovery rise time
tb
-
24
-
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0065-Rev. A, 01-Feb-2021
Document Number: 63039
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90100E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
200
10000
300
VGS = 10 V thru 7 V
100
100
VGS = 5 V
50
1000
200
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
VGS = 6 V
1st line
2nd line
2nd line
ID - Drain Current (A)
250
150
150
TC = 125 °C
100
50
10
0
0
1
2
3
100
TC = 25 °C
TC = -55 °C
0
0
4
1
2
3
4
5
6
10
7
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
8
Axis Title
Axis Title
10000
150
10000
0.02
1000
90
TC = 125 °C
60
100
30
10
0
0
25
50
75
0.015
1000
VGS = 7.5 V
0.01
VGS = 10 V
10
0
0
100
50
Axis Title
10000
Ciss
Crss
100
10
10
150
200
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
Coss
1000
VDS = 50 V, 100 V, 160 V
ID = 16 A
1st line
2nd line
2nd line
C - Capacitance (pF)
10 000
4
100
2
10
0
0
20
40
60
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S21-0065-Rev. A, 01-Feb-2021
200
10
10000
100
150
On-Resistance vs. Drain Current
Axis Title
50
100
ID - Drain Current (A)
Transconductance
0
100
0.005
ID - Drain Current (A)
100
1st line
2nd line
TC = 25 °C
2nd line
RDS(on) - On-Resistance (Ω)
120
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
80
Document Number: 63039
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90100E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
VGS = 10 V, 16 A
1000
1.5
100
VGS = 7.5 V, 13 A
1.0
10
0.5
0
25
50
245
1000
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
2.0
-50 -25
10000
255
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.5
235
100
225
10
215
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
10000
0.05
10000
100
1000
0.03
TJ = 125 °C
0.02
100
TJ = 25 °C
0.01
2
4
6
8
1000
TJ = 150 °C
TJ = 25 °C
1
100
0.1
0.01
10
0
10
1st line
2nd line
2nd line
IS - Source Current (A)
0.04
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 16 A
10
0
10
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Axis Title
10000
3.8
ID = 250 μA
1000
3.0
1st line
2nd line
2nd line
VGS(th) (V)
3.4
2.6
100
2.2
1.8
10
1.4
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Threshold Voltage
S21-0065-Rev. A, 01-Feb-2021
Document Number: 63039
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90100E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
100
1000
Limited by RDS(on)
100 μs
a
10
100
1 ms
TC = 25 °C,
single pulse
DC, 10s,
1s, 10ms,
100ms 10
BVDSS limited
1
0.1
1
10
100
1000
2nd line
IDAV - Drain Current Avalanche (A)
100
1st line
2nd line
2nd line
ID - Drain Current (A)
IDM limited
25 °C
150 °C
10
0.00001
0.0001
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
0.001
0.01
t - Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
PDM
0.05
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
Single pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63039.
S21-0065-Rev. A, 01-Feb-2021
Document Number: 63039
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000
