SUM90142E-GE3

SUM90142E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES TO-263 • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S APPLICATIONS D Top View G • Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting • Synchronous rectification • DC/DC converter • Motor drive switch • DC/AC inverter • Solar micro inverter • Class D audio amplifier PRODUCT SUMMARY VDS (V) 200 RDS(on) max. () at VGS = 10 V 0.0150 RDS(on) max. () at VGS = 7.5 V 0.0165 Qg typ. (nC) 58 ID (A) Configuration D 90 Single G S N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM90142E-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 200 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current a L = 0.1 mH Single pulse avalanche energy a Maximum power dissipation TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 52 240 IS 90 IAS 60 EAS 180 TJ, Tstg c V 90 IDM PD UNIT 375 b 125 b -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient (PCB mount) c Maximum junction-to-case (drain) Steady state SYMBOL MAXIMUM RthJA 40 RthJC 0.4 UNIT °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90142E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 200 - - VGS(th) VDS = VGS , ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 250 nA VDS = 200 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 150 On-state drain current a ID(on) Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance a RDS(on) gfs μA VDS = 200 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 60 - - A VGS = 10 V, ID = 30 A - 0.0123 0.0150 VGS = 7.5 V, ID = 30 A - 0.0130 0.0165  VDS = 15 V, ID = 30 A - 63 - - 3120 - - 280 - - 24 - S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time VDS = 100 V, VGS = 0 V, f = 1 MHz - 58 87 - 17.6 - - 17.2 - VDS = 100 V, VGS = 0 V - 108 162 f = 1 MHz 1.5 3 5 - 14 28 - 125 250 - 27 54 - 80 150 VDS = 100 V, VGS = 10 V, ID = 60 A td(on) tr td(off) VDD = 100 V, RL = 1.66 , ID  60 A, VGEN = 10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr IF = 30 A, VGS = 0 V - - 240 - 0.85 1.5 V - 150 300 ns - 0.9 1.8 nC - 125 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 25 - IRM(REC) - 11.5 20 Body diode peak reverse recovery charge IF = 30 A, dI/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90142E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 200 150 10000 10000 VGS = 10 V thru 7 V VGS = 6 V 80 100 40 1000 90 60 TC = 25 °C 100 30 VGS = 5 V TC = 125 °C 0 2 4 6 8 TC = -55 °C 0 10 0 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 0.016 7000 10000 10000 5600 1000 0.014 0.013 100 VGS = 10 V 1000 4200 1st line 2nd line VGS = 7.5 V 2nd line C - Capacitance (pF) 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 160 Ciss 2800 100 Coss 1400 0.012 Crss 0.011 0 10 20 40 60 80 10 0 100 20 40 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 3.0 ID = 60 A 8 1000 1st line 2nd line 6 VDS = 100 V, 125 V, 150 V 4 100 2 0 10 13 26 39 52 65 2nd line RDS(on) - On-Resistance (Normalized) 10000 0 100 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 60 10000 ID = 30 A 2.5 VGS = 10 V 1000 2.0 VGS = 7.5 V 1.5 100 1.0 0.5 10 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-1636-Rev. A, 22-Aug-16 1st line 2nd line 0 Document Number: 75050 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90142E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.05 10000 ID = 30 A 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 0.04 1000 0.03 0.02 100 0.01 10 0.2 0.4 0.6 0.8 1.0 0 1.2 TJ = 25 °C 4 5 6 8 9 10 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 100 10000 2nd line gfs - Transconductance (S) 0 1000 ID = 5 mA -0.5 1st line 2nd line 2nd line VGS(th) - Variance (V) 7 -1.0 100 ID = 250 μA -1.5 -2.0 0 25 50 80 TC = -55 °C 1000 TC = 25 °C 60 40 TC = 125 °C 100 20 0 10 -50 -25 10000 1st line 2nd line 0 TJ = 125 °C 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 10 75 100 125 150 175 10 0 5 10 15 20 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 25 30 Axis Title 1000 10000 IDM limited ID limited 100 μs 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 Limited by RDS(on) (1) 1 1 ms 10 ms 100 100 ms, DC 0.1 TC = 25 °C Single pulse BVDSS limited 0.01 0.1 (1) 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90142E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 110 10000 1000 66 1st line 2nd line 2nd line ID - Drain Current (A) 88 44 100 22 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 10000 100 10000 ID = 10 mA 250 25 °C 10 1000 1st line 2nd line 230 2nd line IDAV (A) 1000 240 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 260 150 °C 100 100 220 210 10 -50 -25 0 25 50 75 100 125 150 175 1 0.00001 10 0.0001 0.001 TJ - Temperature (°C) 2nd line Time (s) 2nd line Drain Source Breakdown vs. Junction Temperature IDAV vs. Time 0.01 0.1 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90142E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 40 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.1 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75050. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000