SUM90P10-19-E3

New Product SUM90P10-19 Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 100 0.019 at VGS = - 10 V - 90 128 nC • TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUM90P10-19-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C TA = 25 °C Continuous Source-Drain Diode Current - 52 ID - 17b, c - 9.9b, c IDM Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 125 °C TA = 25 °C - 90 IS - 9b, c IAS - 75 EAS 281 mJ 375 125 PD W 13.6b, c 4.5b, c TA = 125 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 90 TC = 25 °C Maximum Power Dissipation V - 90 TA = 125 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 8 11 Steady State RthJC 0.33 0.4 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 s. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73473 S-72337-Rev. D, 05-Nov-07 www.vishay.com 1 New Product SUM90P10-19 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 100 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 111 mV/°C 7 -2 - 4.5 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 175 °C - 500 VDS ≥ 10 V, VGS = - 10 V - 90 µA A rDS(on) VGS = - 10 V, ID = - 20 A 0.0155 gfs VDS = - 15 V, ID = - 20 A 70 0.019 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1670 Total Gate Charge Qg 218 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 12000 VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 50 V, VGS = - 10 V, ID = - 90 A tr Rise Time td(off) Turn-Off Delay Time nC 55 Ω f = 1 MHz 3.5 30 50 VDD = - 50 V, RL = 0.56 Ω ID ≅ - 90 A, VGEN = - 10 V, Rg = 1 Ω 720 1100 125 190 610 920 tf Fall Time 330 55 td(on) Turn-On Delay Time pF 700 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 90 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 250 IS = - 20 A IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.5 V 80 120 ns 230 350 nC 62 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73473 S-72337-Rev. D, 05-Nov-07 New Product SUM90P10-19 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 180 40 VGS = 10 5V I D - Drain Current (A) I D - Drain Current (A) 150 120 90 60 30 25 °C 20 TC = 125 °C 10 4V 30 - 55 °C 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 15000 C - Capacitance (pF) 0.020 VGS = 6 V VGS = 10 V Ciss 12000 9000 6000 0.010 3000 Coss Crss 0 0.000 0 20 40 60 80 0 100 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10.0 2.5 8.0 2.1 100 ID = 20 A VDS = 50 V rDS(on) - (Normalized) V GS - Gate-to-Source Voltage (V) 2 VGS - Gate-to-Source Voltage (V) 0.030 rDS(on) - On-Resistance (Ω) 1 6.0 VDS = 80 V 4.0 1.3 VGS = 10 V 0.9 2.0 0.0 0.0 VGS = 6 V 1.7 40.0 80.0 120.0 160.0 200.0 240.0 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73473 S-72337-Rev. D, 05-Nov-07 175 www.vishay.com 3 New Product SUM90P10-19 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 TJ = 150 °C rDS(on) - Drain-to-Source on-Resistance (Ω) I S - Source Current (A) 100 25 °C 10 1 0.0 0.08 0.06 150 °C 0.04 0.02 25 °C 0.00 0.3 0.6 0.9 1.2 1.5 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6000 1.3 5000 1.0 ID = 1 mA 4000 Power (W) VGS(th) (V) 0.7 0.4 3000 0.1 2000 - 0.2 1000 - 0.5 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 175 0.001 0.01 0.10 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Case (TC = 25 °C) 400 1000 350 I D - Drain Current (A) Power (W) 300 250 200 150 100 100 Limited by rDS(on)* 10 µs 100 µs 10 1 ms 10 ms DC 1 Single Pulse TC = 25 °C 50 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case www.vishay.com 4 175 0.1 0.1 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area Document Number: 73473 S-72337-Rev. D, 05-Nov-07 New Product SUM90P10-19 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 IDav - Peak Avalanche Current (A) 1000 I D - Drain Current (A) 90 60 30 100 10 1 0.1 0 0 25 75 50 100 125 150 175 0.00001 0.001 0.01 0.1 1.0 TA - Time in Avalanche (s) TC - (°C) Avalanche Current vs. Time Max Avalanche and Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance 0.0001 1 0.5 0.2 0.1 0.05 0.1 0.02 Single 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73473. Document Number: 73473 S-72337-Rev. D, 05-Nov-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1