SUP40012EL
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
TO-220AB
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Excellent RDS-Qg and RDS-Qoss FOM reduce
power loss from conduction and switching to
enable high efficiency
• 100 % Rg and UIS tested
Top View
G
D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
APPLICATIONS
• Power supply
- Secondary synchronous rectification
PRODUCT SUMMARY
VDS (V)
• DC/DC converter
40
RDS(on) max. () at VGS = 10 V
0.00179
• Power tools
RDS(on) max. () at VGS = 4.5 V
0.00236
• Motor drive switch
Qg typ. (nC)
D
130
ID (A)
150 d
Configuration
Single
G
• Battery management
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free and halogen-free
SUP40012EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed drain current (t = 100 μs)
IDM
Avalanche current
Single avalanche energy a
Maximum power dissipation a
Operating junction and storage temperature range
ID
L = 0.1 mH
TC = 25 °C
TC = 125 °C
V
150 d
150 d
300
IAS
50
EAS
125
PD
UNIT
150 b
50 b
A
mJ
W
TJ, Tstg
-55 to +175
°C
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-ambient (PCB mount) c
RthJA
40
Junction-to-case (drain)
RthJC
1
°C/W
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S18-1127-Rev. A, 12-Nov-2018
Document Number: 76965
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP40012EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.5
Gate-body leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 30 V, VGS = 0 V
-
-
1
Zero gate voltage drain current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 125 °C
-
-
150
VDS = 30 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS 10 V, VGS = 10 V
120
-
-
A
VGS = 10 V, ID = 30 A
-
0.00149
0.00179
VGS = 4.5 V, ID = 20 A
-
0.00196
0.00236
VDS = 15 V, ID = 30 A
-
230
-
-
10 930
-
VGS = 0 V, VDS = 20 V, f = 1 MHz
-
2041
-
-
101
-
Gate threshold voltage
On-state drain current
a
Drain-source on-state resistance a
Forward transconductance a
ID(on)
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
c
Qg
Gate-source charge c
Gate-drain charge
c
Qgs
VDS = 20 V, VGS = 10 V, ID = 20 A
Qgd
-
130
195
-
33.6
-
-
6.7
-
pF
nC
Output charge
Qoss
VDS = 20 V, VGS = 0 V
-
64
96
Gate resistance
Rg
f = 1 MHz
0.36
1.8
3.6
-
25
50
-
12
24
-
65
130
-
18
36
-
-
300
A
-
0.8
1.5
V
c
td(on)
c
tr
Turn-off delay time c
td(off)
Turn-on delay time
Rise time
Fall time c
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
tf
ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed current (t = 100 μs)
Forward voltage
a
Reverse recovery time
Peak reverse recovery charge
ISM
VSD
IF = 10 A, VGS = 0 V
trr
-
58
116
ns
IRM(REC)
-
2.1
4.2
A
nC
IF = 10 A, di/dt = 100 A/μs
Reverse recovery charge
Qrr
-
72
144
Reverse recovery fall time
ta
-
32
-
Reverse recovery rise time
tb
-
26
-
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1127-Rev. A, 12-Nov-2018
Document Number: 76965
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP40012EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
200
200
10000
100
100
VGS = 3 V
50
150
1000
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
150
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 10 V thru 4 V
100
100
50
TC = 25 °C
TC = -55 °C
TC = 125 °C
0
1
2
3
4
10
0
10
0
0
5.
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
5
Axis Title
10000
320
10000
0.004
1000
160
100
80
10
60.0
0
0
15.0
30.0
45.0
0.003
1000
VGS = 4.5 V
0.002
10
0
0
50
100
200
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
10000
10
10000
ID = 20 A
Coss
1000
1000
Crss
100
100
10
10
20
30
40
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
1st line
2nd line
2nd line
C - Capacitance (pF)
150
ID - Drain Current (A)
10
8
1000
6
VDS = 10 V, 20 V, 32 V
4
100
2
10
0
0
22
44
66
88
110
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S18-1127-Rev. A, 12-Nov-2018
100
VGS = 10 V
0.001
ID - Drain Current (A)
10 000
0
1st line
2nd line
TC = 125 °C
1st line
2nd line
TC = 25 °C
2nd line
RDS(on) - On-Resistance (Ω)
240
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
132
Document Number: 76965
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP40012EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
100
1000
VGS = 4.5 V, 20 A
1.2
100
0.9
-50 -25
0
25
50
1000
TJ = 150 °C
TJ = 25 °C
1
100
0.1
0.01
10
0.6
10
10
0
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
10000
0.005
10000
2.4
ID = 30 A
ID = 250 μA
0.004
TJ = 125 °C
0.002
1000
1.6
1st line
2nd line
1000
0.003
2nd line
VGS(th) (V)
2.0
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
1.5
2nd line
IS - Source Current (A)
VGS = 10 V, 30 A
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.8
1.2
100
100
TJ = 25 °C
0.8
0.001
0
2
4
6
8
10
0.4
10
0
-50 -25
10
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
Axis Title
10000
48
10000
250
47
45
100
44
1000
150
1st line
2nd line
1000
46
2nd line
ID - Drain Current (A)
200
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
Package limited
100
100
50
43
10
42
-50 -25
0
25
50
75 100 125 150 175
10
0
0
25
50
75
100
125
TJ - Junction Temperature (°C)
TC - Case Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Current De-rating
S18-1127-Rev. A, 12-Nov-2018
150
175
Document Number: 76965
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP40012EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
100
10000
1000
Limited by RDS(on)
a
100 μs
1 ms
10
100
10 ms
DC, 10 s,
1 s, 100 ms
TC = 25 °C,
single pulse
BVDSS limited
10
1
0.1
1
10
100
2nd line
IDAV - Drain Current Avalanche (A)
1000
100
1st line
2nd line
2nd line
ID - Drain Current (A)
IDM limited
25 °C
150 °C
10
0.00001
0.0001
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
0.001
0.01
t - Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual pplication parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76965.
S18-1127-Rev. A, 12-Nov-2018
Document Number: 76965
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
1
Document Number: 91000
