SUP45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) ()
ID (A)
0.013 @ VGS = 10 V
45a
0.02 @ VGS = 4.5 V
45a
D
TO-220AB
G
DRAIN connected to TAB
G D S
S
Top View
N-Channel MOSFET
SUP45N03-13L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
30
Gate-Source Voltage
VGS
"10
Continuous Drain Current (TJ = 175_C)
_
TC = 25_C
TC = 125_C
Pulsed Drain Current
ID
IDM
Avalanche Current
Unit
V
45a
34a
A
100
IAR
45
Repetitive Avalanche Energyb
L = 0.1 mH
EAR
100
Maximum Power Dissipationb
TC = 25_C
PD
88c
W
TJ, Tstg
–55 to 175
_C
Symbol
Limit
Unit
RthJA
85
RthJC
1.7
Operating Junction and Storage Temperature Range
mJ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Free Air
_
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70804
S-05011—Rev. F, 29-Oct-01
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SUP45N03-13L
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 A
30
VGS(th)
VDS = VGS, IDS = 250 A
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
ID(on)
rDS(on)
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
VDS = 30 V, VGS = 0 V, TJ = 175_C
150
VDS = 5 V, VGS = 10 V
45
gfs
VGS = 10 V, ID = 45 A
0.01
0.0155
0.02
VGS = 10 V, ID = 45 A, TJ = 175_C
0.02
0.026
0.0145
0.02
VDS = 15 V, ID = 45 A
V
nA
A
VGS = 10 V, ID = 45 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
3
0.013
20
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
220
Total Gate Chargec
Qg
45
Gate-Source
Chargec
Qgs
2730
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 45 A
450
pF
70
8.5
nC
Gate-Drain Chargec
Qgd
8
Turn-On Delay Timec
td(on)
11
20
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
VDD = 15 V, RL = 0.33
9
20
td(off)
ID ] 45 A, VGEN = 10 V, RG = 2.5
38
70
11
20
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
45
Pulsed Current
ISM
100
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = 45 A, VGS = 0 V
1
1.3
V
35
70
ns
IF = 45 A, di/dt = 100 A/s
1.7
A
0.03
C
trr
IRM(REC)
Qrr
Notes:
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
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Document Number: 70804
S-05011—Rev. F, 29-Oct-01
SUP45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
Transfer Characteristics
100
VGS = 10 thru 6 V
5V
80
I D – Drain Current (A)
I D – Drain Current (A)
90
60
4V
30
60
40
TC = 125_C
20
25_C
3V
0
–55_C
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
0.05
60
r DS(on) – On-Resistance ( )
g fs – Transconductance (S)
TC = –55_C
25_C
125_C
40
20
0
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0.00
0
10
20
30
40
50
60
0
20
VGS – Gate-to-Source Voltage (V)
60
80
ID – Drain Current (A)
Capacitance
Gate Charge
10
V GS – Gate-to-Source Voltage (V)
4000
Ciss
C – Capacitance (pF)
40
3000
2000
1000
Coss
Crss
0
VGS = 15 V
ID = 45 A
8
6
4
2
0
0
6
12
18
24
VDS – Drain-to-Source Voltage (V)
Document Number: 70804
S-05011—Rev. F, 29-Oct-01
30
0
10
20
30
40
50
Qg – Total Gate Charge (nC)
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SUP45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
I S – Source Current (A)
r DS(on) – On-Resistance ()
(Normalized)
VGS = 10 V
ID = 45 A
1.5
1.0
0.5
–50
TJ = 150_C
TJ = 25_C
10
1
–25
0
25
50
75
100
125
150
175
0.3
TJ – Junction Temperature (_C)
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
200
60
100
I D – Drain Current (A)
I D – Drain Current (A)
50
40
30
20
10 s
Limited
by rDS(on)
100 s
10
1 ms
10 ms
TC = 25_C
Single Pulse
10
100 ms
dc
0
1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 70804
S-05011—Rev. F, 29-Oct-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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