SUP50010E-GE3

SUP50010E www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES TO-220AB • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View G D S APPLICATIONS D • Power supply - Secondary synchronous rectification PRODUCT SUMMARY • DC/DC converter VDS (V) 60 • Power tools RDS(on) max. () at VGS = 10 V 0.00200 RDS(on) max. () at VGS = 7.5 V 0.00250 Qg typ. (nC) 141 ID (A) 150 d Configuration Single G • Motor drive switch • DC/AC inverter • Battery management S • OR-ing / e-fuse N-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and halogen-free SUP50010E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed drain current (t = 100 μs) ID IDM Avalanche current Single avalanche energy a L = 0.1 mH TC = 25 °C Maximum power dissipation a TC = 125 °C Operating junction and storage temperature range V 150 d 150 d 500 IAS 60 EAS 180 PD UNIT 375 b 125 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain) RthJA 40 RthJC 0.4 °C/W Notes a. Duty cycle  1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited S18-1019-Rev. A, 08-Oct-2018 Document Number: 79578 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50010E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 60 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 60 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.00166 0.00200 VGS = 7.5 V, ID = 20 A - 0.00208 0.00250 VDS = 15 V, ID = 30 A - 120 - - 10 895 - VGS = 0 V, VDS = 30 V, f = 1 MHz - 2420 - - 85 - Gate threshold voltage On-state drain current a Drain-source on-state resistance a Forward transconductance a ID(on) RDS(on) gfs V nA μA  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Gate-drain charge c Qgs VDS = 30 V, VGS = 10 V, ID = 20 A Qgd - 141 212 - 43.6 - - 19.1 - pF nC Output charge Qoss VDS = 50 V, VGS = 0 V - 143 215 Gate resistance Rg f = 1 MHz 0.24 1.2 2.4 - 28 56 - 12 24 - 50 100 - 13 26 - - 250 A - 0.8 1.5 V c td(on) c tr Turn-off delay time c td(off) Turn-on delay time Rise time Fall time c VDD = 30 V, RL = 3  ID  10 A, VGEN = 10 V, Rg = 1  tf  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed current (t = 100 μs) Forward voltage a Reverse recovery time Peak reverse recovery charge ISM VSD IF = 10 A, VGS = 0 V trr - 75 150 ns IRM(REC) - 2.8 5.6 A μC IF = 34 A, di/dt = 100 A/μs Reverse recovery charge Qrr - 0.12 0.24 Reverse recovery fall time ta - 38 - Reverse recovery rise time tb - 37 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1019-Rev. A, 08-Oct-2018 Document Number: 79578 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50010E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 100 VGS = 10 V thru 6 V 100 50 1000 60 1st line 2nd line 100 2nd line ID - Drain Current (A) 1000 VGS = 5 V 1st line 2nd line 40 100 TC = 25 °C 20 VGS = 4 V 10 0 0 1.0 2.0 3.0 4.0 10 0 5.0 0 1.6 3.2 6.4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8 Axis Title Axis Title 10000 TC = -55 °C 10000 0.004 1000 90 60 100 30 10 0 0 10 20 30 40 50 0.003 1000 VGS = 7.5 V 0.002 VGS = 10 V 10 0 0 60 50 150 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10000 10 ID = 20 A Coss 1000 1st line 2nd line 1000 Crss 100 10 10 30 40 50 60 2nd line VGS - Gate-to-Source Voltage (V) Ciss 20 8 1000 6 VDS = 15 V, 30 V, 48 V 4 100 2 10 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S18-1019-Rev. A, 08-Oct-2018 200 Axis Title 10 000 10 100 ID - Drain Current (A) 10000 0 100 0.001 Axis Title 100 1st line 2nd line TC = 125 °C 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 120 1st line 2nd line 2nd line gfs - Transconductance (S) 4.8 VDS - Drain-to-Source Voltage (V) 150 2nd line C - Capacitance (pF) TC = -55 °C TC = 125 °C 1st line 2nd line 2nd line ID - Drain Current (A) 80 150 150 Document Number: 79578 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50010E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 1000 1.2 VGS = 7.5 V, 20 A 100 0.9 0.6 -50 -25 0 25 50 10 1000 TJ = 150 °C 1st line 2nd line 1.5 2nd line IS - Source Current (A) VGS = 10 V, 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.8 TJ = 25 °C 1 100 0.1 0.01 10 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 10000 0.006 3.7 10000 ID = 30 A ID = 250 μA 0.003 3.1 1000 1st line 2nd line TJ = 125 °C 2nd line VGS(th) (V) 1000 0.004 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.005 2.5 100 100 0.002 1.9 TJ = 25 °C 0.001 4 6 8 10 1.3 10 0 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 10000 70 10000 375 68 64 100 1000 225 1st line 2nd line 1000 66 2nd line ID - Drain Current (A) 300 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 250 μA 150 100 Package limited 75 62 10 60 -50 -25 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 TJ - Junction Temperature (°C) TC - Case Temperature (°C) Drain Source Breakdown vs. Junction Temperature Current De-rating S18-1019-Rev. A, 08-Oct-2018 150 175 Document Number: 79578 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50010E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 100 10000 1000 1000 Limited by RDS(on) 1st line 2nd line 2nd line ID - Drain Current (A) 100 μs 100 a 1 ms 10 ms 100 10 DC, 10 s, 1 s, 100 ms TC = 25 °C, single pulse BVDSS limited 10 1 0.1 1 10 100 2nd line IDAV - Drain Current Avalanche (A) IDM limited 25 °C 150 °C 10 0.00001 0.0001 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified 0.001 0.01 t - Time (s) Single Pulse Avalanche Current Capability vs. Time 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual pplication parameters and operating conditions         Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79578. S18-1019-Rev. A, 08-Oct-2018 Document Number: 79578 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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