SUP50N10-21P-GE3

SUP50N10-21P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS TO-220AB • DC/AC Inverters • Primary Side Switching • Synchronous Rectification D G G D S Top View Ordering Information: SUP50N10-21P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID 41.6 IDM 60 Avalanche Current IAS 40 L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range EAS PD V 50d Pulsed Drain Current (t = 300 µs) a Unit 80 125b 3.1 A mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 1 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 62781 S12-2730-Rev. A, 12-Nov-12 For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50N10-21P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4 ± 250 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 ID(on) VDS 10 V, VGS = 10 V 20 V nA µA A VGS = 10 V, ID = 10 A 0.017 0.021 RDS(on) VGS = 8 V, ID = 9.6 A 0.019 0.023 VGS = 6 V, ID = 8.7 A 0.022 0.028 gfs VDS = 20 V, ID = 10 A 40  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec c Qgs Gate-Drain Charge Qgd Gate Resistance Rg c Turn-On Delay Time Rise Timec Turn-Off Delay Timec Fall Timec 2055 VGS = 0 V, VDS = 50 V, f = 1 MHz 120 45 VDS = 50 V, VGS = 10 V, ID = 10 A td(off) 68 nC 10.5 15.9 f = 1 MHz 0.3 td(on) tr pF 227 VDD = 20 V, RL = 2  ID  8 A, VGEN = 10 V, Rg = 1  tf 1.5 3 10 20 10 20 22 33 7 14  ns Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C)b IS 50 Pulsed Current ISM 60 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 8 A, VGS = 0 V trr IRM(REC) IF = 8 A, dI/dt = 100 A/µs Qrr A 0.75 1.2 V 55 83 ns 4.1 6.2 A 107 161 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact:: pmostechsupport@vishay.com Document Number: 62781 S12-2730-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50N10-21P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.028 VGS = 10 V thru 7 V VGS = 6 V 0.025 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 45 30 15 VGS = 6 V 0.022 VGS = 8 V 0.019 VGS = 10 V 0.016 VGS = 5 V 0.013 0 0 1 2 3 0 4 15 VDS - Drain-to-Source Voltage (V) 30 45 60 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 2 0.05 ID =10 A RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 1.5 TC = 25 °C 1 0.5 0.04 TJ = 125 °C 0.03 0.02 TC = 125 °C TJ = 25 °C TC = - 55 °C 0.01 0 0 1.5 3 4.5 2 6 VGS - Gate-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 75 ID = 10 A TC = - 55 °C 60 VGS - Gate-to-Source Voltage (V) gfs - Transconductance (S) TC = 25 °C TC = 125 °C 45 30 15 0 0 6 12 18 ID - Drain Current (A) Transconductance Document Number: 62781 S12-2730-Rev. A, 12-Nov-12 24 30 VDS = 50 V 8 VDS = 25 V 6 VDS = 80 V 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50N10-21P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 3.8 ID = 250 μA 3.4 10 VGS(th) (V) IS - Source Current (A) TJ = 150 °C 3 2.6 TJ = 25 °C 1 2.2 0.1 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 125 150 125 150 125 3000 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 2400 Ciss 1800 1200 600 120 115 110 105 Coss 0 Crss 100 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) - 50 100 - 25 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 60 2.2 VGS = 10 0V 45 1.75 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 10 A VGS = 8 V 1.3 30 15 0.85 0 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 4 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating For technical questions, contact:: pmostechsupport@vishay.com Document Number: 62781 S12-2730-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50N10-21P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 Limited by RDS(on)* 10 TJ = 150 °C IDAV (A) 100 μs ID - Drain Current (A) TJ = 25 °C 10 1 ms 10 ms DC, 10 s, 1 s, 100 ms 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 1 10-6 10-5 0.0001 0.001 0.01 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Time (s) Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62781. Document Number: 62781 S12-2730-Rev. A, 12-Nov-12 For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000