SUP60020E-GE3

SUP60020E www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES TO-220AB • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View G D S APPLICATIONS D • Power supply - Secondary synchronous rectification PRODUCT SUMMARY • DC/DC converter VDS (V) 80 • Power tools RDS(on) max. () at VGS = 10 V 0.0024 RDS(on) max. () at VGS = 7.5 V 0.0028 Qg typ. (nC) 151.2 ID (A) 150 d Configuration Single G • Motor drive switch • DC/AC inverter • Battery management S • OR-ing / e-fuse N-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and halogen-free SUP60020E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 80 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed drain current (t = 100 μs) ID IDM Avalanche current Single avalanche energy a L = 0.1 mH TC = 25 °C Maximum power dissipation a TC = 125 °C Operating junction and storage temperature range V 150 d 150 d 500 IAS 60 EAS 180 PD UNIT 375 b 125 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain) RthJA 40 RthJC 0.4 °C/W Notes a. Duty cycle  1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited S19-0182-Rev. A, 25-Feb-2019 Document Number: 77056 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60020E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 80 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 80 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.00200 0.00240 VGS = 7.5 V, ID = 20 A - 0.00215 0.00280 VDS = 15 V, ID = 30 A - 115 - - 10 680 - VGS = 0 V, VDS = 40 V, f = 1 MHz - 1180 - - 50 - - 151.2 227 - 48.4 - - 24 - Gate threshold voltage On-state drain current a Drain-source on-state resistance a Forward transconductance a ID(on) RDS(on) gfs V nA μA  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Gate-drain charge c Output charge Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Qgs VDS = 40 V, VGS = 10 V, ID = 41.7 A Qgd Qoss VDS = 40 V, VGS = 0 V - 138 207 Rg f = 1 MHz 0.34 1.7 3.4 td(on) - 30 60 tr VDD = 40 V, RL = 1.2  ID  33.3 A, VGEN = 10 V, Rg = 1  - 13 26 - 50 100 - 15 30 - - 250 td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed current (t = 100 μs) Forward voltage a Reverse recovery time Peak reverse recovery charge ISM VSD IF = 10 A, VGS = 0 V trr IRM(REC) IF = 33.3 A, di/dt = 100 A/μs A - 0.75 1.5 V - 80 160 ns - 4 6 A μC Reverse recovery charge Qrr - 0.182 0.275 Reverse recovery fall time ta - 44 - Reverse recovery rise time tb - 36 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0182-Rev. A, 25-Feb-2019 Document Number: 77056 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60020E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 200 Axis Title 10000 VGS = 10 V thru 6 V 10000 100 VGS = 5 V 100 50 1000 60 1st line 2nd line 100 2nd line ID - Drain Current (A) 1000 1st line 2nd line 40 100 TC = 25 °C 20 VGS = 4 V 10 0 0 1 2 3 TC = -55 °C TC = 125 °C 10 0 4 0 1.6 3.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 90 60 100 30 2nd line RDS(on) - On-Resistance (Ω) TC = 125 °C 10 0 20 30 40 50 10000 0.0040 1st line 2nd line 2nd line gfs - Transconductance (S) 10000 TC = 25 °C 10 0.0034 1000 0.0028 VGS = 7.5 V 0.0022 0.0016 10 0.0010 0 60 50 Axis Title 10000 Ciss Crss 100 10 10 60 80 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Coss 1000 VDS = 20 V, 40 V, 64 V ID = 42 A 1st line 2nd line 2nd line C - Capacitance (pF) 10 000 4 100 2 10 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S19-0182-Rev. A, 25-Feb-2019 200 10 10000 40 150 On-Resistance vs. Drain Current Axis Title 20 100 ID - Drain Current (A) Transconductance 0 100 VGS = 10 V ID - Drain Current (A) 100 8 Axis Title Axis Title TC = -55 °C 0 6.4 VDS - Drain-to-Source Voltage (V) 150 120 4.8 1st line 2nd line ID - Drain Current (A) 80 150 150 Document Number: 77056 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60020E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 1000 1.3 VGS = 7.5 V, 20 A 100 0.9 -50 -25 0 25 50 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.01 10 0.5 10 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 10000 0.010 10000 3.5 ID = 30 A ID = 250 μA 0.008 TJ = 125 °C 0.004 1000 2.5 1st line 2nd line 1000 0.006 2nd line VGS(th) (V) 3.0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1.7 2nd line IS - Source Current (A) VGS = 10 V, 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.1 2.0 100 100 TJ = 25 °C 1.5 0.002 2 4 6 8 10 1.0 10 0 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 10000 100 10000 325 97 91 100 1000 195 1st line 2nd line 1000 94 2nd line ID - Drain Current (A) 260 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 10 mA 130 100 65 88 10 85 -50 -25 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 TJ - Junction Temperature (°C) TC - Case Temperature (°C) Drain Source Breakdown vs. Junction Temperature Current De-rating S19-0182-Rev. A, 25-Feb-2019 150 175 Document Number: 77056 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60020E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 100 10000 2nd line IDAV - Drain Current Avalanche (A) 100 1000 100 μs 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited Limited by RDS(on) a 1 ms 10 100 10 ms TC = 25 °C, single pulse DC, 10 s, 1 s, 100 ms BVDSS limited 1 0.1 1 10 100 10 0.00001 10 1000 25 °C 150 °C 0.0001 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified Normalized Effective Transient Thermal Impedance 1 0.001 0.01 t - Time (s) Single Pulse Avalanche Current Capability vs. Time Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77056. S19-0182-Rev. A, 25-Feb-2019 Document Number: 77056 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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