SUP60061EL-GE3

SUP60061EL www.vishay.com Vishay Siliconix P-Channel 80 V (D-S) MOSFET FEATURES TO-220AB • TrenchFET® power MOSFET • Package with low thermal resistance • Maximum 175 ºC junction temperature • Low RDS(on) minimizes power loss from conduction • Compatible with logic-level gate driving • 100 % Rg and UIS tested Top View G D S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY VDS (V) -80 RDS(on) max. (Ω) at VGS = -10 V 0.0058 RDS(on) max. (Ω) at VGS = -4.5 V 0.0081 Qg typ. (nC) 145 ID (A) -150 Configuration S • Battery protection • Motor drive control G • Load switch P-Channel MOSFET Single D ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free SUP60061EL-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -80 Gate-source voltage VGS ± 20 Continuous drain current d (TJ = 175 °C) TC = 25 °C TC = 70 °C Pulsed drain current (100 μs) Avalanche current Single pulse avalanche energy a Power dissipation ID IDM L = 0.1 mH TC = 25 °C TC = 125 °C b Operating junction and storage temperature range -150 d -250 IAS -75 281 PD V -150 d EAS c UNIT 375 125 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case PCB mount b °C/W Notes a. Duty cycle ≤ 1 % b. When mounted on 1" square PCB (FR4 material) c. See SOA curve for voltage derating d. Limited by package S23-0595-Rev. B, 31-Jul-2023 Document Number: 63020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60061EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic VDS VGS = 0 V, ID = -10 mA -80 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = -80 V, VGS = 0 V - - -10 IDSS VDS = -64 V, VGS = 0 V, TJ = 125 °C - - -50 VDS = -64 V, VGS = 0 V, TJ = 175 °C - - -250 VDS ≤ -5 V, VGS = -10 V -30 - - VGS = -10 V, ID = -20 A - 0.0048 0.0058 VGS = -4.5 V, ID = -15 A - 0.0065 0.0081 VDS = -15 V, ID = -15 A - 80 - - 9600 - - 3300 - - 110 - ID(on) RDS(on) gfs V nA μA A Ω S b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs VGS = 0 V, VDS = -40 V, f = 1 MHz pF - 145 218 VDS = -40 V, VGS = -10 V, ID = -110 A - 34 - - 16 - f = 1 MHz 0.46 2.3 4.6 - 25 35 - 20 30 - 90 140 - 20 30 IS - - -150 Pulsed current ISM - - -250 Forward voltage a VSD - -0.8 -1.5 V - 90 135 ns - -2.8 -4.2 A - 145 218 nC Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Qgd Rg td(on) tr td(off) VDD = -40 V, RL = 0.71 Ω ID ≅ -20 A, VGEN = -10 V, Rg = 1 Ω tf nC Ω ns Drain-Source Body Diode Characteristics (TC = 25 °C b) Continuous current Reverse recovery time Peak reverse recovery charge Reverse recovery charge IF = -10 A, VGS = 0 V trr IRM(REC) Qrr IF = -20 A, dI/dt = 100 A/μs A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-0595-Rev. B, 31-Jul-2023 Document Number: 63020 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60061EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 200 1000 1st line 2nd line VGS = 4 V 100 100 50 150 1000 1st line 2nd line 2nd line ID - Drain Current (A) 150 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V 100 TC = 125 °C 100 50 TC = 25 °C VGS = 3 V 10 0 0 1.0 2.0 3.0 TC = -55 °C 0 4.0 0 1 2 3 10 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 10000 200 10000 0.02 100 1000 TC = 125 °C 100 50 0.015 1000 0.01 VGS = 4.5 V 0 25 50 75 10 0 0 100 50 ID - Drain Current (A) Axis Title 10000 Ciss 1000 Crss 100 10 10 60 80 VDS = 20 V, 40 V, 64 V 8 1000 6 1st line 2nd line Coss 1000 2nd line VGS - Gate-to-Source Voltage (V) ID = 20 A 1st line 2nd line 2nd line C - Capacitance (pF) 10 000 40 4 100 2 10 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S23-0595-Rev. B, 31-Jul-2023 200 10 10000 20 150 On-Resistance vs. Drain Current Axis Title 0 100 ID - Drain Current (A) Transconductance 100 100 VGS = 10 V 0.005 10 0 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 150 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 150 Document Number: 63020 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60061EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 2.2 VGS = 10 V, 20 A ID = 250 μA 1.2 VGS = 4.5 V, 15 A 1000 1.6 1st line 2nd line 1000 2nd line VGS(th) (V) 1.9 1.5 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.8 1.3 100 100 0.9 1.0 -50 -25 0 25 50 10 0.7 10 0.6 75 100 125 150 175 -50 -25 0 25 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 10000 10000 98 ID = 20 A 1000 0.01 TJ = 125 °C 100 TJ = 25 °C 0.005 10 0 2 4 6 8 95 1000 1st line 2nd line 0.015 2nd line VDS - Drain-to-Source Voltage (V) ID = 10 mA 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 75 100 125 150 175 TJ - Junction Temperature (°C) 0.02 92 100 89 10 86 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title 100 10 1000 1st line 2nd line TJ = 150 °C TJ = 25 °C 1 100 0.1 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S23-0595-Rev. B, 31-Jul-2023 2nd line IDAV - Drain Current Avalanche (A) 10000 100 2nd line IS - Source Current (A) 50 150 °C 10 0.00001 0.0001 25 °C 0.001 0.01 t - Time (s) Avalanche Current vs. Time Document Number: 63020 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60061EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 100 1000 100 μs Limited by RDS(on) a 1 ms 10 TC = 25 °C, single pulse BVDSS limited 1 10 100 DC, 10s, 1s, 10ms, 100ms 1 0.1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W Single pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63020. S23-0595-Rev. B, 31-Jul-2023 Document Number: 63020 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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