SUP60N10-18P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
ID (A)
0.0183 at VGS = 10 V
60
0.023 at VGS = 8.0 V
53
Qg (Typ.)
48
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Industrial
• Power Supply
TO-220AB
D
G
G D S
S
Top View
Ordering Information: SUP60N10-18P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
IDM
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
Unit
V
60
50
100
IAS
45
EAS
101
A
mJ
b
PD
150
3.75
W
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
1.0
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
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1
SUP60N10-18P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
4.5
± 250
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 10 V, VGS = 10 V
ID(on)
RDS(on)
50
nA
µA
A
VGS = 10 V, ID = 15 A
0.015
0.0183
VGS = 10 V, ID = 15 A, TJ = 125 °C
0.027
0.033
VGS = 8.0 V, ID = 10 A
0.018
0.023
VDS = 15 V, ID = 15 A
33
gfs
V
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source
Chargec
c
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
Rise Timec
Turn-Off Delay Timec
Fall Timec
2600
VGS = 0 V, VDS = 50 V, f = 1 MHz
80
48
VDS = 50 V, VGS = 10 V, ID = 50 A
td(off)
75
nC
16
13
f = 1 MHz
td(on)
tr
pF
230
VDD = 50 V, RL = 1.0 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
tf
0.25
1.1
2.4
12
20
10
20
18
35
8
15
Ω
ns
Drain-Source Body Diode Characteristics TC = 25 °Cb
IS
60
Pulsed Current
ISM
100
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 15 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 50 A, dI/dt = 100 A/µs
A
0.85
1.5
V
80
120
ns
4
160
A
240
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1.5
VGS = 10 V thru 8 V
1.2
I D - Drain Current (A)
I D - Drain Current (A)
80
VGS = 7 V
60
40
20
0.9
0.6
TC = 25 °C
0.3
VGS = 6 V
TC = 125 °C
0
TC = - 55 °C
0.0
0
1
2
3
4
5
0
2
4
10
Transfer Characteristics
Output Characteristics
75
0.04
60
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
45
TC = 25 °C
TC = 125 °C
30
15
0
0.03
0.02
VGS = 8 V
VGS = 10 V
0.01
0.00
0
10
20
30
40
50
0
20
40
ID - Drain Current (A)
60
80
100
120
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
20
2800
VGS - Gate-to-Source Voltage (V)
3500
C - Capacitance (pF)
6
Ciss
2100
1400
700
ID = 15 A
15
VDS = 50 V
VDS = 80 V
10
5
Coss
Crss
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
100
0
20
40
60
80
100
Qg - Total Gate Charge (nC)
Gate Charge
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SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
100
VGS = 10 V
ID = 15 A
TJ = 150 °C
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
10
2.0
VGS = 8 V
1.5
1.0
TJ = 25 °C
1
0.1
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.7
0.10
0.2
0.08
VGS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
ID = 15 A
0.06
0.04
TJ = 150 °C
- 0.3
- 0.8
ID = 5 mA
- 1.3
ID = 250 µA
0.02
- 1.8
TJ = 25 °C
- 2.3
- 50
0.00
4
5
6
7
8
9
10
- 25
0
VGS - Gate-to-Source Voltage (V)
25
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
130
100
ID = 1 mA
120
115
I DAV (A)
(Normalized)
R DS(on) - On-Resistance
125
110
TJ = 25 °C
10
TJ = 150 °C
105
100
95
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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175
1
10-5
10-4
10-3
10-2
10-1
1
t AV (s)
Avalanche Current vs. Time
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10 µs
Limited by RDS(on)*
I D - Drain Current (A)
100 µs
10
1 ms
10 ms, DC
1
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
75
180
150
I D - Drain Current (A)
60
Power (W)
120
90
60
45
30
15
30
0
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
175
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Current Derating*
* The power dissipation PD is based on TJ(max.) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
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5
SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65003.
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Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
