SUP65P04-15-E3

SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S TO-263 G DRAIN connected to TAB G D S Top View G D S SUB65P04-15 Top View D SUP65P04-15 P-Channel MOSFET Ordering Information: SUP65P04-15-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Repetitive Avalanche Energy Power Dissipation TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)b Operating Junction and Storage Temperature Range ID - 240 IAR - 60 PD V - 65 - 37 IDM EAR Unit 180 120c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Symbol Limit PCB Mount (TO-263)b RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 1.25 Junction-to-Case °C/W Notes: a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 71174 S11-2308-Rev. B, 21-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP/SUB65P04-15 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 40 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance 0.024 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.030 VDS = - 15 V, ID = - 50 A nA µA 0.015 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.012 VGS = - 4.5 V, ID = - 20 A a -3 0.018 Ω 0.023 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c 130 nC 25 Qgd 15 td(on) 15 25 380 580 c td(off) 75 115 140 210 Timec Turn-Off Delay Time 85 VDS = - 20 V, VGS = - 10 V, ID = - 65 A c Gate-Drain Charge Rise Qgs pF 640 300 Qg c Turn-On Delay Time 5400 VGS = 0 V, VDS = - 25 V, f = 1 MHz tr Fall Timec VDD = - 20 V, RL = 0.3 Ω ID ≅ - 65 A, VGEN = - 10 V, RG = 2.5 Ω tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS - 65 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = - 65 A, VGS = 0 V trr IRM(REC) Qrr IF = - 65 A, dI/dt = 100 A/µs A - 1.2 - 1.5 V 40 80 ns 2 4 A 0.04 0.1 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71174 S11-2308-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP/SUB65P04-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 250 100 VGS = 10 thru 7 V 6V 80 I D - Drain Current (A) I D - Drain Current (A) 200 150 5V 100 50 4V 60 40 TC = 125 °C 20 25 °C - 55 °C 3 V, 2 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.04 80 TC = - 55 °C 0.03 125 °C VGS = 4.5 V 0.02 40 R DS(on) g fs - Transconductance (S) 25 °C 60 20 VGS = 10 V 0.01 0 0 0 20 40 60 80 0 100 20 40 ID - Drain Current (A) Transconductance 80 100 120 On-Resistance vs. Drain Current 8000 VGS - Gate-to-Source Voltage (V) 20 Ciss 6000 C - Capacitance (pF) 60 ID - Drain Current (A) 4000 2000 Coss Crss 0 VDS = 20 V ID = 65 A 16 12 8 4 0 0 6 12 18 24 30 0 40 80 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71174 S11-2308-Rev. B, 21-Nov-11 160 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP/SUB65P04-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 30 A 1.5 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.0 TJ = 150 °C 10 0.5 TJ = 25 °C 0 - 50 1 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 1.2 60 ID = 250 µA V DS (V) 100 I Dav (a) 55 IAV (A) at TA = 25 °C 10 IAV (A) at TA = 150 °C 50 45 1 40 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 35 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 71174 S11-2308-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP/SUB65P04-15 Vishay Siliconix THERMAL RATINGS 75 1000 10 µs I D - Drain Current (A) I D - Drain Current (A) 60 45 30 Limited by R DS(on)* 100 1 ms 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 15 0 0 25 50 75 100 125 150 175 100 µs 0.1 0.1 TC - Case Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71174. Document Number: 71174 S11-2308-Rev. B, 21-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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