SUP70042E-GE3

SUP70042E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES TO-220AB • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View G D S APPLICATIONS D • Switching power supply • DC/DC converter PRODUCT SUMMARY • Power tools VDS (V) 100 RDS(on) max. (Ω) at VGS = 10 V 0.0040 RDS(on) max. (Ω) at VGS = 7.5 V 0.0045 Qg typ. (nC) • Motor drive switch G • DC/AC inverter • Battery management 84 d ID (A) 150 Configuration Single • OR-ing / e-fuse S N-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and halogen-free SUP70042E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed drain current (t = 100 μs) ID IDM Avalanche current Single avalanche energy a L = 0.1 mH TC = 25 °C Maximum power dissipation a TC = 125 °C Operating junction and storage temperature range V 150 d 139 200 IAS 50 EAS 125 PD UNIT 278 b 178 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain) RthJA 40 RthJC 0.55 °C/W Notes a. Duty cycle ≤ 1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited S21-0258-Rev. A, 15-Mar-2021 Document Number: 63051 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70042E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 10 mA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 100 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS ≥ 10 V, VGS = 10 V 50 - - A VGS = 10 V, ID = 20 A - 0.0033 0.0040 VGS = 7.5 V, ID = 15 A - 0.0036 0.0045 VDS = 15 V, ID = 15 A - 60 - - 6490 - VGS = 0 V, VDS = 50 V, f = 1 MHz - 570 - - 20 - Gate threshold voltage On-state drain current a Drain-source on-state resistance a Forward transconductance a ID(on) RDS(on) gfs V nA μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance 84 110 - 33.5 - - 9.5 - f = 1 MHz 0.26 1.3 2.6 - 25 50 - 18 36 - 45 90 - 14 28 - - 200 - 0.8 1.5 V - 58 116 ns - 3.9 5.9 A μC Qgd Rg Turn-on delay time c td(on) c tr Turn-off delay time c td(off) Rise time VDS = 50 V, VGS = 10 V, ID = 20 A Qg Qgs Fall time c VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics Pulsed current (t = 100 μs) Forward voltage a Reverse recovery time Peak reverse recovery charge pF b Ω ns (TC = 25 °C) ISM VSD nC IF = 10 A, VGS = 0 V trr IRM(REC) IF = 10 A, di/dt = 100 A/μs Reverse recovery charge Qrr - 126 189 Reverse recovery fall time ta - 42 - Reverse recovery rise time tb - 16 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0258-Rev. A, 15-Mar-2021 Document Number: 63051 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70042E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 150 10000 150 VGS = 10 V thru 7 V 120 1000 1st line 2nd line 90 60 100 VGS = 5 V 30 1000 90 TC = 125 °C 60 100 30 10 0 0 1.0 2.0 3.0 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 6 V 2nd line ID - Drain Current (A) 120 TC = 25 °C TC = -55 °C 0 0 4.0 1 2 3 4 5 6 10 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8 Axis Title Axis Title 10000 120 10000 0.008 1000 TC = 125 °C 60 100 30 10 0 0 10 20 30 40 0.006 1000 VGS = 7.5 V 0.004 10 0 0 50 30 Crss 100 10 10 80 100 10000 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Coss 1000 4 100 2 10 0 0 22 44 66 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S21-0258-Rev. A, 15-Mar-2021 150 VDS = 25 V, 50 V, 80 V ID = 20 A Ciss 1st line 2nd line 2nd line C - Capacitance (pF) 10 000 60 120 Axis Title 10 10000 40 90 On-Resistance vs. Drain Current Axis Title 20 60 ID - Drain Current (A) Transconductance 0 100 VGS = 10 V 0.002 ID - Drain Current (A) 100 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 90 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 88 Document Number: 63051 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70042E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 125 10000 VGS = 10 V, 20 A 2nd line VDS - Drain-to-Source Voltage (V) ID = 10 mA 2.0 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 1.5 100 VGS = 7.5 V, 15 A 1.0 -50 -25 0 25 50 115 110 105 10 0.5 120 -50 -25 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 10000 0.02 10000 100 1000 0.01 TJ = 125 °C 100 0.005 TJ = 25 °C 2 4 6 8 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.01 10 0 10 1st line 2nd line 2nd line IS - Source Current (A) 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 10 0 10 0.2 0.4 0.6 0.8 1.0 1.2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Axis Title 10000 3.7 ID = 250 μA 1000 2.7 1st line 2nd line 2nd line VGS(th) (V) 3.2 2.2 100 1.7 10 1.2 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage S21-0258-Rev. A, 15-Mar-2021 Document Number: 63051 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70042E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 100 10000 1000 100 μs Limited by RDS(on) a 10 100 1 ms TC = 25 °C, single pulse BVDSS limited DC, 10s, 1s, 10ms, 100ms 1 0.1 1 10 10 1000 100 2nd line IDAV - Drain Current Avalanche (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 25 °C 150 °C 10 0.000001 0.00001 0.0001 0.001 0.01 t - Time (s) VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63051. S21-0258-Rev. A, 15-Mar-2021 Document Number: 63051 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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