SUP70060E-GE3

SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. ID (A) 0.0058 at VGS = 10 V 131 0.0064 at VGS = 7.5 V 129 Qg (TYP.) 53.5 nC • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS D • Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting Top View G D G • Synchronous rectification S • DC/DC converter • Motor drive switch Ordering Information: SUP70060E-GE3 (lead (Pb)-free and halogen-free) S • DC/AC inverter N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy L = 0.1 mH a TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range ID 75 240 IAS 50 PD V 131 IDM EAS UNIT 125 200 b 66.6 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70060E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 100 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 2 mA VDS  10 V, VGS = 10 V 90 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 30 A - 0.0048 0.0058 VGS = 7.5 V, ID = 30 A - 0.0050 0.0064 VDS = 15 V, ID = 30 A - 85 - - 3330 - V nA μA  S b Input Capacitance Ciss Output Capacitance Coss - 1395 - Reverse Transfer Capacitance Crss - 95 - Total Gate Charge c Qg - 53.5 81 Gate-Source Charge c Gate-Drain Charge c VDS = 50 V, VGS = 10 V, ID = 30 A - 14.5 - - 13.2 - f = 1 MHz 0.9 1.9 3.8 - 13 26 VDD = 50 V, RL = 1.67  ID  30 A, VGEN = 10 V, Rg = 1  - 22 44 - 27 54 - 9 18 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/μs - - 240 A - 0.86 1.4 V - 88 176 ns - 5 10 A - 0.22 0.44 μC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70060E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 250 200 10000 10000 VGS = 10 V thru 7 V 100 100 VGS = 5 V 50 1000 120 1st line 2nd line 1000 VGS = 6 V 150 2nd line ID - Drain Current (A) 160 1st line 2nd line 2nd line ID - Drain Current (A) 200 80 TC = 25 °C 100 40 TC = 125 °C VGS = 4 V 0 0 1 2 3 4 TC = -55 °C 0 10 5 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 100 10000 0.007 10000 1000 60 TC = 125 °C 40 100 20 0 0 5.0 10.0 15.0 20.0 25.0 0.006 0.005 10 0 20 On-Resistance vs. Drain Current Axis Title 100 Crss 0 10 60 80 100 10000 ID = 30 A 8 1000 6 1st line 2nd line Coss 2nd line VGS - Gate-to-Source Voltage (V) 1000 Ciss 3600 40 4 VDS = 25 V, 50 V, and 75 V 100 2 0 10 0 11 22 33 44 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-0244-Rev. A, 15-Feb-16 100 10 1st line 2nd line 2nd line C - Capacitance (pF) 80 Transconductance 4800 20 60 ID - Drain Current (A) 2nd line 10000 0 40 ID - Drain Current (A) 2nd line Axis Title 1200 100 VGS = 10 V 0.004 0.003 10 30.0 6000 2400 1000 VGS = 7.5 V 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 80 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 55 Document Number: 65382 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70060E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 1.0 10000 10000 ID = 30 A 0.4 1000 1.4 VGS = 7.5 V 1.1 100 2nd line VGS(th) - Variance (V) VGS = 10 V 0.8 1000 -0.2 ID = 5 mA -0.8 -2.0 10 -50 -25 0 25 50 75 100 125 150 175 10 -50 -25 0 25 75 100 125 150 175 TJ - Temperature (°C) 2nd line On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 0.02 100 TJ = 125 °C 0.01 TJ = 25 °C 2 4 6 8 10 ID = 250 μA 120 1000 1st line 2nd line 1000 2nd line VDS - Drain-to-Source Voltage (V) 0.04 0.03 10000 125 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 50 TJ - Junction Temperature (°C) 2nd line 0.05 115 100 110 105 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 150 10000 10 10000 TJ = 25 °C 0.1 100 0.01 1000 90 1st line 2nd line 1000 1 2nd line ID - Drain Current (A) 120 TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 100 ID = 250 μA -1.4 0.5 0 1st line 2nd line 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 60 100 30 0.001 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 0 25 50 75 100 125 VSD - Source-to-Drain Voltage (V) 2nd line TC - Case Temperature (°C) 2nd line Source Drain Diode Forward Voltage Current De-Rating S16-0244-Rev. A, 15-Feb-16 150 175 Document Number: 65382 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70060E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 100 10000 100 μs ID limited 1000 1 ms 1000 10 10 ms 1st line 2nd line Limited by RDS(on) (1) 2nd line IDAV (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 25 °C 150 °C 100 100 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single pulse BVDSS limited 0.1 0.1 (1) 1 10 100 10 1000 10 0.00001 0.0001 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified 10 0.01 0.001 Time (s) 2nd line Safe Operating Area IDAV vs. Time Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 40 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP70060E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 100 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65382. S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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