SUP75P05-08-E3

SUP/SUB75P05-08 New Product Vishay Siliconix P-Channel 55-V (D-S), 175C MOSFET     V(BR)DSS (V) rDS(on) (
) ID (A) –55 0.008 –75a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB75P05-08 SUP75P05-08 P-Channel MOSFET            Parameter Symbol Limit Drain-Source Voltage VDS –55 Gate-Source Voltage VGS
20 ID TC = 150C –47 A Pulsed Drain Current IDM –240 Avalanche Current IAR –75 EAR 280 Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 125C (TO-263)c Operating Junction and Storage Temperature Range V –75a TC = 25C Continuous Drain Current (TJ = 175C) Unit mJ 250d PD TJ, Tstg W 3.7 –55 to 175 C      Parameter Symbol Limit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.6 Junction-to-Ambient Junction-to-Case Unit C/W Notes: a. Package limited. b. Duty cycle  1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70891 S-99404—Rev. B, 29-Nov-99 www.vishay.com
FaxBack 408-970-5600 2-1 SUP/SUB75P05-08 New Product Vishay Siliconix                Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –55 VGS(th) VDS = VGS, ID = –250 mA –1 –2 –3 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = –44 V, VGS = 0 V –1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = –44 V, VGS = 0 V, TJ = 125C –50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = –44 V, VGS = 0 V, TJ = 175C a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea rDS(on) gfs VDS = –5 V, VGS = –10 V mA A –700 –120 A VGS = –10 V, ID = –30 A 0.008 VGS = –4.5 V, ID = –20 A 0.013 VGS = –10 V, ID = –30 A, TJ = 125C 0.014 VGS = –10 V, ID = –30 A, TJ = 175C 0.016 VDS = –15 V, ID = –30 A nA 75 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 8500 VGS = 0 V, V VDS = –25 25 V V, f = 1 MHz MH pF F 1220 915 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 13 20 tr VDD = –30 V,, RL = 0.47 W 140 225 td(off) ID ] –75 A, VGEN = –10 V, RG = 2.5 W 115 185 175 300 Rise Timec Turn-Off Delay Timec Fall Timec 140 VDS = –30 V, VGS = –10 30 V 10 V, V ID = –75 75 A 225 nC C 30 30 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current Is –75 Pulsed Current ISM –240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –75 A, VGS = 0 V trr IRM(REC) Qrr IF = –75 75 A, A di/dt di/d = 100 A/ms A/ –1.1 –1.3 V 60 120 ns 2.2 3.5 A 0.176 0.21 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com
FaxBack 408-970-5600 2-2 Document Number: 70891 S-99404—Rev. B, 29-Nov-99 SUP/SUB75P05-08 New Product Vishay Siliconix           Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 7 V TC = –55C 6V 200 25C 160 I D – Drain Current (A) I D – Drain Current (A) 5V 150 100 4V 50 120 125C 80 40 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 6 On-Resistance vs. Drain Current 0.06 TC = –55C 25C 0.05 r DS(on)– On-Resistance (
) 90 125C 60 30 0 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 60 80 100 120 250 300 ID – Drain Current (A) Capacitance Gate Charge 20 12000 V GS – Gate-to-Source Voltage (V) 10000 Ciss C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 120 g fs – Transconductance (S) 1 8000 6000 4000 Coss 2000 VDS = 30 V ID = 75 A 16 12 8 4 Crss 0 0 0 11 22 33 44 VDS – Drain-to-Source Voltage (V) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 55 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com
FaxBack 408-970-5600 2-3 SUP/SUB75P05-08 New Product Vishay Siliconix           On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 70 65 ID = 250 mA IAV (A) @ TJ = 25C V(BR)DSS (V) 100 I Dav (a) 10 1 0 10 IAV (A) @ TJ = 150C 60 55 50 1 45 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com
FaxBack 408-970-5600 2-4 0.1 1 40 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 SUP/SUB75P05-08 New Product Vishay Siliconix     Maximum Avalanche and Drain Current vs. Case Temperature 100 I D – Drain Current (A) I D – Drain Current (A) 75 60 45 30 10 ms Limited by rDS(on) 100 ms 1 ms 10 10 ms TC = 25C Single Pulse 15 0 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Effective Transient Thermal Impedance Safe Operating Area 500 90 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 www.vishay.com
FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1