SUP/SUB85N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
ID (A)a
0.0043 @ VGS = 10 V
85a
0.007 @ VGS = 4.5 V
85a
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D TO-263 (D2PAK) 100% Rg Tested
D
TO-220AB
TO-263
(D2PAK)
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB85N03-04P
Top View
SUP85N03-04P
N-Channel MOSFET
Ordering Information: SUP85N03-04P (TO-220AB)
SUB85N03-04P (TO-263, D2PAK)
SUB85N03-04P—E3 (TO-263, D2PAK, Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
TC = 25_C
Continuous Drain Current (TJ = 175_C)
TC = 100_C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
ID
L = 0.1 mH
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
V
85a
85a
240
IAR
75
EAR
280
PD
Unit
166c
3.75
A
mJ
W
TJ, Tstg
−55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d
J
Junction-to-Ambient
ti t A bi t
Junction-to-Case
Free Air (TO-220AB)
40
RthJA
RthJC
62.5
_C/W
C/W
0.9
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
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SUP/SUB85N03-04P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1
2
3
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
VDS = 30 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
Drain Source On-State
Drain-Source
On State Resistancea
rDS(on)
Forward Transconductancea
gfs
0.0035
mA
m
0.0043
0.0065
VGS = 10 V, ID = 30 A, TJ = 175_C
0.008
VDS = 15 V, ID = 30 A
nA
A
VGS = 10 V, ID = 30 A, TJ = 125_C
0.0055
VGS = 4.5 V, ID = 20 A
V
W
0.007
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistanced
4500
1380
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
615
Rg
0.7
3.8
Total Gate Chargeb
Qg
71
Gate-Source Chargeb
Qgs
15
Gate-Drain Chargeb
Qgd
16
Turn-On Delay Timeb
td(on)
15
23
12
18
50
75
22
35
Rise
Timeb
Turn-Off Delay Timeb
Fall Timeb
tr
td(off)
VDS = 15 V,, VGS = 10 V,, ID = 85 A
VDD = 15 V, RL = 0.18 W
ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W
tf
W
90
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
IF = 85 A, VGS = 0 V
trr
Peak Reverse Recovery Current
IRM
Reverse Recovery Charge
Qrr
IF = 85 A, di/dt = 100 A/ms
m
A
1.1
1.5
V
42
70
ns
1.4
2.1
A
0.03
0.06
mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
d. TO-263 (D2PAK) only.
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Document Number: 71241
S-40101—Rev. C, 26-Jan-04
SUP/SUB85N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
VGS = 10 thru 6 V
Transfer Characteristics
250
5V
200
I D − Drain Current (A)
I D − Drain Current (A)
200
150
100
4V
50
150
100
TC = 125_C
50
25_C
−55_C
2, 3 V
0
0
0
2
4
6
8
10
0
1
VDS − Drain-to-Source Voltage (V)
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
180
0.008
TC = −55_C
r DS(on) − On-Resistance ( W )
g fs − Transconductance (S)
150
25_C
120
125_C
90
60
30
0
VGS = 4.5 V
0.006
VGS = 10 V
0.004
0.002
0.000
0
20
40
60
80
0
100
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
Ciss
4000
3000
Coss
2000
1000
Crss
0
0
100
120
Gate Charge
20
6000
5000
80
ID − Drain Current (A)
Capacitance
7000
60
VDS = 15 V
ID = 85 A
16
12
8
4
0
6
12
18
24
VDS − Drain-to-Source Voltage (V)
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
30
0
20
40
60
80
100
120
140
Qg − Total Gate Charge (nC)
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SUP/SUB85N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r DS(on) − On-Resistance
(Normalized)
1.6
On-Resistance vs. Junction Temperature
100
1.2
0.8
0.4
0.0
−50
Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
I S − Source Current (A)
2.0
−25
0
25
50
75
100
125
150
TJ = 150_C
10
TJ = 25_C
1
0
175
0.3
TJ − Junction Temperature (_C)
Avalanche Current vs. Time
I Dav (a)
100
10
40
IAV (A) @ TA = 25_C
IAV (A) @ TA = 150_C
0.0001
0.001
0.01
tin (Sec)
4
ID = 250 mA
35
30
0.1
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1.2
Drain Source Breakdown vs.
Junction Temperature
45
1
0.00001
0.9
VSD − Source-to-Drain Voltage (V)
V(BR)DSS (V)
1000
0.6
0.1
1
25
−50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature (_C)
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
SUP/SUB85N03-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
Limited by rDS(on)
10 ms
100
I D − Drain Current (A)
I D − Drain Current (A)
80
60
40
20
0
1 ms
10
1
25
50
75
100
125
150
175
TC = 25_C
Single Pulse
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TC − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
10 ms
100 ms
dc
0.1
0
1
100 ms
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−5
10−4
10−3
10−2
10−1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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