SUP/SUB85N04-03
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175C MOSFET
V(BR)DSS (V)
rDS(on) ()
ID (A)
0.0035 @ VGS = 10 V
40
85 a
0.0053 @ VGS = 4.5 V
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB85N04-03
Top View
SUP85N04-03
N-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
20
TC = 25C
Continuous Drain Current (TJ = 175C)
175 C)
TC = 125C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
ID
L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
TA = 25C (TO-263)d
Operating Junction and Storage Temperature Range
V
85a
85a
A
240
IAR
75
EAR
280
PD
Unit
250c
3.75
mJ
W
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
Parameter
PCB Mount (TO-263)d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
40
RthJA
RthJC
62.5
C/W
0.6
Notes
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
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2-1
SUP/SUB85N04-03
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
40
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
100
VDS = 40 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
On-State Drain Currenta
a
D i S
O S
R i
Drain-Source
On-State
Resistance
IDSS
ID(on)
rDS(on)
V
3
VDS = 40 V, VGS = 0 V, TJ = 125C
50
VDS = 40 V, VGS = 0 V, TJ = 175C
250
VDS w 5 V, VGS = 10 V
120
0.0029
0.0035
VGS = 4.5 V, ID = 20 A
0.0044
0.0053
VDS = 15 V, ID = 30 A
W
0.0053
VGS = 10 V, ID = 30 A, TJ = 175C
gfs
mA
A
A
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125C
Forward Transconductancea
nA
0.0063
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
6860
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
F
1320
800
165
VDS = 30 V,
V VGS = 10 V
V, ID = 85 A
250
nC
C
25
Gate-Drain Chargec
Qgd
55
Turn-On Delay Timec
td(on)
15
25
tr
90
135
95
145
125
195
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = 30 V
V,, RL = 0
0.35
35 W
ID ^ 85 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
1.1
1.4
V
60
90
ns
IF = 85 A
A, di/dt = 100 A/ms
2.6
4
A
0.08
0.15
mC
trr
IRM(REC)
Qrr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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2-2
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
SUP/SUB85N04-03
New Product
Vishay Siliconix
Output Characteristics
Transfer Characteristics
250
250
VGS = 10 thru 6 V
200
5V
I D – Drain Current (A)
I D – Drain Current (A)
200
150
100
4V
50
150
100
TC = 125C
50
25C
–55C
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.008
200
TC = –55C
g fs – Transconductance (S)
r DS(on) – On-Resistance ( )
25C
160
125C
120
80
40
0
0.006
VGS = 4.5 V
0.004
VGS = 10 V
0.002
0
0
20
40
60
80
100
0
20
40
ID – Drain Current (A)
80
100
120
ID – Drain Current (A)
Capacitance
Gate Charge
20
12000
V GS – Gate-to-Source Voltage (V)
10000
C – Capacitance (pF)
60
Ciss
8000
6000
4000
Coss
2000
VDS = 30 V
ID = 85 A
16
12
8
4
Crss
0
0
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
40
0
60
120
180
240
300
Qg – Total Gate Charge (nC)
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2-3
SUP/SUB85N04-03
New Product
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
I S – Source Current (A)
r DS(on) – On-Resistance (W)
(Normalized)
1.6
1.2
0.8
0.4
0
–50
TJ = 150C
1
–25
0
25
50
75
100
125
150
175
0
0.3
TJ – Junction Temperature (C)
0.9
1.2
Drain Source Breakdown vs.
Junction Temperature
1000
60
54
100
IAV (A) @ TA = 25C
V(BR)DSS (V)
I Dav (a)
0.6
VSD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
10
TJ = 25C
10
IAV (A) @ TA = 150C
ID = 250 mA
48
42
1
36
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
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2-4
0.1
1
30
–50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (C)
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
SUP/SUB85N04-03
New Product
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
10 ms
80
100 ms
I D – Drain Current (A)
I D – Drain Current (A)
100
60
40
Limited
by rDS(on)
0
10 ms
10
100 ms
dc
1
20
1 ms
TC = 25C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Ambient Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
2-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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