SUP85N10-10-E3

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC ID (A) 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N10-10 Top View N-Channel MOSFET SUP85N10-10 ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SUP85N10-10-E3 TO-263 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current L = 0.1 mH b Single Pulse Avalanche Energy Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263) d 60a IDM 240 IAS 75 EAS 280 A mJ 250c PD W 3.75 TJ, Tstg Operating Junction and Storage Temperature Range V 85a ID TC = 125 °C Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Symbol PCB Mount (TO-263)d Free Air (TO-220AB) RthJA RthJC Limit Unit 40 62.5 °C/W 0.6 Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 www.vishay.com 1 SUP85N10-10, SUB85N10-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Drain-Source Breakdown Voltage Gate-Threshold Voltage 3 ± 100 VDS = 100 V, VGS = 0 V, TJ = 175 °C a On-State Drain Current Drain-Source On-State Resistancea VDS = ≥ 5 V, VGS = 10 V ID(on) RDS(on) VGS = 10 V, ID = 30 A 0.0085 0.0105 VGS = 4.5 V, ID = 20 A 0.010 0.012 VDS = 15 V, ID = 30 A µA A VGS = 10 V, ID = 30 A, TJ = 125 °C gfs nA 250 120 0.017 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V Ω 0.022 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Gate-Drain Charge Timec c Qgs c Fall Timec 665 pF 265 105 VDS = 50 V, VGS = 10 V, ID = 85 A 160 nC 17 Qgd 23 td(on) 12 25 90 135 55 85 130 195 tr Rise Time Turn-Off DelayTime VGS = 0 V, VDS = 25 V, f = 1 MHz Qg c Turn-On Delay 6550 td(off) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = 85 A, VGS = 0 V 1.0 1.5 V 85 140 ns IF = 50 A, dI/dt = 100 A/µs 4.5 7 A 0.35 µC trr IRM(REC) ns 0.17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 SUP85N10-10, SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 200 250 VGS = 10 V thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 150 150 100 4V 100 TC = 125 °C 50 50 - 55 °C 25 °C 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 6 0.020 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 200 25 °C 150 125 °C 100 50 0 0 20 40 60 80 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 100 0 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 20 VGS - Gate-to-Source Voltage (V) 10 000 8000 C - Capacitance (pF) 60 Ciss 6000 4000 2000 Crss VDS = 50 V ID = 85 A 16 12 8 4 Coss 0 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 75 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP85N10-10, SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 140 130 100 IAV (A) at T A = 25 °C VDS (V) I Dav (a) 0.3 TJ - Junction Temperature (°C) 10 IAV (A) at T A = 150 °C ID = 250 µA 120 110 1 100 0.1 0.00001 www.vishay.com 4 0.0001 0.001 0.01 0.1 1 90 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time TJ - Drain-Source Breakdown vs. Junction-Temperature 150 175 Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 SUP85N10-10, SUB85N10-10 Vishay Siliconix THERMAL RATINGS 100 1000 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 100 µs 10 Limited by R DS(on)* 1 ms 10 ms 100 ms, DC 1 20 0 0 25 50 75 100 125 150 175 0.1 0.1 TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71141. Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1