SUP90220E
www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
TO-220AB
• ThunderFET® power MOSFET
• Low RDS - Qg figure-of-merit (FOM)
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
G
D
S
APPLICATIONS
D
• Synchronous rectification
• Power supplies
PRODUCT SUMMARY
VDS (V)
• DC/AC inverter
200
RDS(on) max. () at VGS = 10 V
0.0216
RDS(on) max. () at VGS = 7.5 V
0.0235
Qg typ. (nC)
G
• Solar micro inverter
• Motor drive switch
31.6
ID (A)
Configuration
• DC/DC converter
S
N-Channel MOSFET
64
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and halogen-free
SUP90220E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
200
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
L = 0.1 mH
Single pulse avalanche energy a
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
37
100
IS
64.7
IAS
45
EAS
101
TJ, Tstg
c
V
64
IDM
PD
UNIT
230 b
77 b
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
SYMBOL
MAXIMUM
RthJA
40
RthJC
0.65
UNIT
°C/W
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
S16-2291-Rev. A, 14-Nov-16
Document Number: 75261
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90220E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
250
nA
VDS = 200 V, VGS = 0 V
-
-
1
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
150
On-state drain current a
ID(on)
Gate-source threshold voltage
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
VDS = 200 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS 10 V, VGS = 10 V
30
-
-
A
VGS = 10 V, ID = 15 A
-
0.0180
0.0216
VGS = 7.5 V, ID = 10 A
-
0.0188
0.0235
VDS = 15 V, ID = 15 A
-
37
-
-
1950
-
-
170
-
-
15
-
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
VDS = 100 V, VGS = 0 V, f = 1 MHz
pF
-
31.6
48
VDS = 100 V, VGS =10 V, ID = 15 A
-
8.6
-
-
7.6
-
f = 1 MHz
0.6
3
6
-
15
30
-
35
53
-
28
42
tf
-
38
57
Pulse diode forward current (t = 100 μs)
ISM
-
-
100
Body diode voltage
VSD
-
0.85
1.5
V
-
120
180
ns
-
0.91
1.37
μC
-
95
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = 100 V, RL = 8.3 , ID 12 A,
VGEN = 10 V, Rg = 1
nC
ns
Drain-Source Body Diode Characteristics
Body diode reverse recovery time
trr
IF = 12 A, VGS = 0 V
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
25
-
IRM(REC)
-
12
18
Body diode peak reverse recovery charge
IF = 12 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2291-Rev. A, 14-Nov-16
Document Number: 75261
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90220E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
Axis Title
10000
10000
100
VGS = 10 V thru 7 V
1000
60
VGS = 6 V
40
100
20
1000
60
1st line
2nd line
ID - Drain Current (A)
80
1st line
2nd line
40
20
VGS = 5 V
TC = 125 °C
0
10
0
1
2
3
4
TC = -55 °C
0
0
5
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
2nd line
10
10
Transfer Characteristics
Output Characteristics
Axis Title
Axis Title
4500
0.03
1000
1st line
2nd line
Vgs = 7.5 V
0.02
Vgs = 10 V
100
2nd line
C - Capacitance (pF)
10000
0.04
2nd line
RDS(on) - On-Resistance (Ω)
100
TC = 25 °C
0.01
10000
3600
1000
2700
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Ciss
1800
100
Coss
900
Crss
0
10
0
20
40
60
80
0
10
0
100
40
60
80
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10000
ID = 20 A
2.8
1st line
2nd line
6
VDS = 160 V
4
100
2
0
10
14
21
28
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
S16-2291-Rev. A, 14-Nov-16
35
2.2
1000
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Normalized)
VGS = 10 V, ID = 15 A
VDS = 50 V
7
10000
VDS = 100 V
8
0
100
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
20
1.6
100
VGS = 7.5 V, ID = 10 A
1.0
0.4
-50 -25
0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Document Number: 75261
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90220E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
0.06
TJ = 150 °C
1000
1
1st line
2nd line
TJ = 25 °C
0.1
100
0.01
0.001
0.05
0.2
0.4
0.6
0.8
1.0
TJ = 25 °C
0.02
100
0.01
0
1.2
10
4
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
60
10000
4.0
TC = -55 °C
2nd line
gfs - Transconductance (S)
ID = 250 μA
3.5
1000
3.0
1st line
2nd line
2nd line
VGS(th) (V)
1000
0.03
10
0
TJ = 150 °C
0.04
2.5
100
2.0
1.5
10
-50 -25
0
25
50
45
TC = 25 °C
1000
30
1st line
2nd line
2nd line
IS - Source Current (A)
10
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 15 A
TC = 125 °C
100
15
0
75 100 125 150 175
10
0
5
10
15
TJ - Temperature (°C)
2nd line
ID - Drain Current (A)
2nd line
Threshold Voltage
Transconductance
20
25
Axis Title
1000
10000
IDM limited
Limited by RDS(on) (1)
100 μs
10
1000
1 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
DC, 10 s,
100
1 s, 100 ms
0.1
TC = 25 °C
Single pulse
BVDSS limited
0.01
0.1
(1)
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-2291-Rev. A, 14-Nov-16
Document Number: 75261
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90220E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
70
10000
1000
42
1st line
2nd line
2nd line
ID - Drain Current (A)
56
28
100
14
0
10
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
ID = 10 mA
230
220
2nd line
IDAV (A)
1000
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
100
10000
240
25 °C
150 °C
100
210
200
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
10
0.00001
0.0001
0.001
Time (s)
2nd line
IDAV vs. Time
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2291-Rev. A, 14-Nov-16
Document Number: 75261
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90220E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.01
0.02
0.001
Single pulse
0.0001
0.00001
0.0001
0.001
0.01
Pulse Time (s)
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75261.
S16-2291-Rev. A, 14-Nov-16
Document Number: 75261
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000