SUP90N06-6m0P
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
60
0.006 at VGS = 10 V
90d
78.5
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-220AB
D
G
G D S
S
Top View
Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25
Operating Junction and Storage Temperature Range
°Cc
Unit
V
90d
90d
240
IAS
50
EAS
125
A
mJ
b
PD
272
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.55
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
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1
SUP90N06-6m0P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
± 250
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 150 °C
250
VDS ≥ 10 V, VGS = 10 V
ID(on)
RDS(on)
4.5
70
nA
µA
A
VGS = 10 V, ID = 20 A
0.005
0.006
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.008
0.010
VDS = 15 V, ID = 20 A
58
gfs
V
Ω
S
Dynamicb
Input Capacitance
Ciss
4700
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
250
Total Gate Chargec
Qg
78.5
Gate-Source
Chargec
Gate-Drain Chargec
td(on)
c
td(off)
tr
Fall Timec
pF
620
120
nC
28
20.6
Rg
c
Rise Timec
Turn-Off Delay Time
VDS = 30 V, VGS = 10 V, ID = 50 A
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
VGS = 0 V, VDS = 30 V, f = 1 MHz
f = 1 MHz
VDD = 30 V, RL = 0.6 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
1.2
2.4
16
30
10
20
25
40
8
15
IS
85
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 20 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°Cb
Pulsed Current
Continuous Current
Ω
IF = 75 A, dI/dt = 100 A/µs
A
0.83
1.5
V
62
100
ns
3.8
5.7
A
118
180
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
120
VGS = 10 V thru 7 V
80
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
6V
60
40
TC = 125 °C
20
20
- 55 °C
25 °C
0
0
0
1
2
3
4
0
5
2
4
6
8
10
80
100
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.0055
120
TC = - 55 °C
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
96
25 °C
72
125 °C
48
24
0.0053
0.0051
VGS = 10 V
0.0049
0.0047
0.0045
0
0
12
24
36
48
0
60
20
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
6000
0.05
ID = 20 A
Ciss
4800
0.04
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
60
ID - Drain Current (A)
25 °C
0.03
0.02
150 °C
3600
2400
1200
0.01
Coss
Crss
0
0.00
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
10
0
12
24
36
48
60
VDS - Drain-to-Source Voltage (V)
Capacitance
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SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
10
ID = 20 A
VDS = 15 V
1.7
VDS = 30 V
6
VDS = 45 V
4
VGS = 10 V
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 50 A
1.4
1.1
0.8
2
0.5
- 50
0
0
17
34
51
68
85
- 25
0
Qg - Total Gate Charge (nC)
75
100
125
150
175
0.8
100
150 °C
10
0.2
V GS(th) Variance (V)
I S - Source Current (A)
50
Threshold Voltage
On-Resistance vs. Junction Temperature
1.0
25 °C
0.1
- 0.4
ID = 5 mA
- 1.0
ID = 250 µA
- 1.6
0.01
0.001
0.0
25
TJ - Junction Temperature (°C)
0.2
0.4
0.6
0.8
1.0
- 2.2
- 50
1.2
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
76
100
ID = 1 mA
150 °C
70
IDAV (A)
VDS (normalized)
73
67
25 °C
10
64
61
58
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
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175
1
0.00001
0.0001
0.001
0.01
0.1
1.0
TAV (s)
Maximum Drain Current vs. Case Temperature
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
185
Limited by R DS(on)*
I D - Drain Current (A)
I D - Drain Current (A)
148
111
Package Limited
74
100
1 ms
10
10 ms
100 ms
DC
1
37
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
TC - Case Temperature (°C)
Single Pulse Avalanche Current Capability vs. Time
* VGS
minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69536.
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
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Package Information
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Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
