SUV85N10-10
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.0105 @ VGS = 10 V
100
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
ID (A)
APPLICATIONS
85 a
0.012 @ VGS = 4.5 V
D DC/DC Primary Side Switch
D
TO-262
1
2 3
G
G
D S
S
Top View
N-Channel MOSFET
SUV85N10-10
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
100
Gate-Source Voltage
VGS
"20
TC = 25_C
Continuous Drain Current (TJ = 175_C)
TC = 125_C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energyb
L = 0.1 mH
TC = 25_C
Maximum Power Dissipationb
TA = 25_C d
Operating Junction and Storage Temperature Range
ID
V
85a
60a
IDM
240
IAR
75
EAR
Unit
280
A
mJ
250c
PD
3.75
W
TJ, Tstg
- 55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
PCB Mountd
J
Junction-to-Ambient
ti t A bi t
Junction-to-Case
Free Air
40
RthJA
RthJC
62.5
_C/W
C/W
0.6
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
www.vishay.com
1
SUV85N10-10
New Product
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 80 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
ID(on)
rDS(on)
V
3
VDS = 80 V, VGS = 0 V, TJ = 125_C
50
VDS = 80 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
0.0085
0.0105
VGS = 4.5 V, ID = 20 A
0.0010
0.012
VDS = 15 V, ID = 30 A
W
0.017
VGS = 10 V, ID = 30 A, TJ = 175_C
gfs
mA
m
A
VGS = 10 V, ID = 30 A, TJ = 125_C
Forward Transconductancea
nA
0.022
25
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
265
Total Gate Chargec
Qg
105
Gate-Source Chargec
Qgs
17
Gate-Drain Chargec
Qgd
23
Turn-On Delay Timec
td(on)
12
25
tr
90
135
55
85
130
195
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
6550
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 50 V,, VGS = 10 V,, ID = 85 A
VDD = 50 V, RL = 0.6 W
ID ^ 85 A, VGEN = 10 V, RG = 2.5 W
tf
665
pF
160
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
1.0
1.5
V
85
140
ns
IF = 50 A,, di/dt = 100 A/ms
m
4.5
7
A
0.17
0.35
mC
trr
IRM(REC)
Qrr
A
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
SUV85N10-10
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 thru 6 V
5V
I D - Drain Current (A)
I D - Drain Current (A)
200
150
100
4V
50
150
100
TC = 125_C
50
25_C
- 55_C
3V
0
0
0
2
4
6
8
0
10
VDS - Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
250
0.020
TC = - 55_C
r DS(on) - On-Resistance ( W )
g fs - Transconductance (S)
200
25_C
150
125_C
100
50
0
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0.005
0.000
0
20
40
60
80
0
100
20
40
ID - Drain Current (A)
80
100
120
ID - Drain Current (A)
Capacitance
Gate Charge
20
V GS - Gate-to-Source Voltage (V)
10000
8000
C - Capacitance (pF)
60
Ciss
6000
4000
2000
Crss
Coss
0
VDS = 50 V
ID = 85 A
16
12
8
4
0
0
15
30
45
60
VDS - Drain-to-Source Voltage (V)
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
75
0
50
100
150
200
Qg - Total Gate Charge (nC)
www.vishay.com
3
SUV85N10-10
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S - Source Current (A)
r DS(on) - On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TJ = 150_C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (_C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
140
130
V(BR)DSS (V)
100
IAV (A) @ TA = 25_C
I Dav (a)
TJ = 25_C
10
10
IAV (A) @ TA = 150_C
ID = 250 mA
120
110
1
100
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
www.vishay.com
4
0.1
1
90
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
SUV85N10-10
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
10 ms
80
I D - Drain Current (A)
I D - Drain Current (A)
100
60
40
100 ms
10
0
1 ms
10 ms
100 ms
dc
1
20
Limited
by rDS(on)
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
TC - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
