T163VU-SF-F

T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 21642 DESCRIPTION APPLICATIONS T163VU is an infrared, 950 nm emitting diode chip in GaAs technology. Anode is the bond pad on top. • Emitter in photo interrupters GERNEAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT φe (mW) Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 22 1.2 n/a 950 800 T163VU Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T163VU-SF-F PACKAGING REMARKS PACKAGE FORM wafer sawn on foil without any frame MOQ: 25 000 pcs chip Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Forward current IF 100 mA Reverse voltage VR 5 V Surge forward current Junction temperature TEST CONDITION tp = 100 μs IFSM 1.5 A Tj 125 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg1 -40 to +100 °C Storage temperature range on foil Tstg2 -40 to +50 °C Rev. 1.4, 28-Jul-14 Document Number: 81133 1 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T163VU www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF TYP. MAX. UNIT 1.3 V IF = 1 A, tp = 100 μs VF 1.8 V IF = 100 mA TKVF -1.3 mV/K VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 100 mA, TO-18 gold header assembly Ie 1.2 mW/sr Temperature coefficient of VF Junction capacitance Radiant intensity MIN. Radiant power (epoxy encapsulated) IF = 100 mA φe 22 mW Temperature coefficient of φe IF = 100 mA TKφe -0.8 %/K Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA λ0.5 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 20 mA tr, tf 800 ns IF = 1 A tr, tf 400 ns Rise time, fall time BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.6 10 3 1.2 Ie rel; Φe rel I F - Forward Current (mA) 10 4 10 2 10 1 0.8 0.4 10 0 10 -1 0 1 2 3 0 -10 0 10 4 V F - Forward Voltage (V) 94 7996 94 7993 Fig. 1 - Forward Current vs. Forward Voltage 50 100 140 T amb - Ambient Temperature (°C) Fig. 3 - Relative Radiant Intensity / Power vs. Ambient Temperature 1.2 1.25 Φe rel - Relative Radiant Power VF rel - Relative Forward Voltage (V) IF = 20 mA 1.1 IF = 10 mA 1.0 0.9 0.8 1.0 0.75 0.5 0.25 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.4, 28-Jul-14 IF = 100 mA 0 900 0.7 94 7994 950 1000 λ - Wavelength (nm) Fig. 4 - Relative Radiant Power vs. Wavelength Document Number: 81133 2 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T163VU www.vishay.com Vishay Semiconductors MECHANICAL DIMENSIONS PARAMETER SYMBOL Length of chip edge (x-direction) Lx MIN. TYP. MAX. 0.37 UNIT mm Length of chip edge (y-direction) Ly 0.37 mm Emission area AE 0.34 x 0.34 mm2 Die height H 0.265 mm Diameter of bondpad d 0.14 mm ADDITIONAL INFORMATION Frontside metallization, anode aluminum Backside metallization, cathode gold alloy Dicing Die bonding technology sawing epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Rev. 1.4, 28-Jul-14 Document Number: 81133 3 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000