T337P-SD-F

T337P6 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 0.67 x 0.67 x 0.28 • Radiant sensitive area (in mm2): 0.23 • Peak sensitivity wavelength: 970 nm • High photo sensitivity • Suitable for visible light and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION T337P6 is pin photodiode chip with 0.23 mm2 sensitive area detecting visible and near infrared radiation. Anode and cathode are the bond pads on top. APPLICATIONS • High speed photo detector GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.5 (nm) 2.3 ± 60 610 to 1080 PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil with disco frame MOQ: 150 000 pcs Chip COMPONENT T337P6 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T337P6-SD-F Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage VR 60 V Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg1 -40 to +100 °C Storage temperature range on foil Tstg2 -40 to +50 °C Rev. 1.2, 11-May-15 TEST CONDITION UNIT Document Number: 84259 1 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T337P6 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 Reverse dark current Diode capacitance Reverse light current TYP. MAX. UNIT V VR = 10 V, E = 0 Iro