T8514VB-SF-F

T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in 21594 DESCRIPTION T8514VB is an infrared, 850 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 3.3 - 850 25 T8514VB Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T8514VB-SF-F PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil MOQ: 25 000 pcs Chip Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT Forward current PARAMETER TEST CONDITION IF 100 mA Reverse voltage VR 5 V IFSM 1 A Tj 125 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range chip Tstg1 - 40 to + 100 °C Storage temperature range on foil Tstg2 - 40 to + 50 °C Surge forward current tp = 100 µs Junction temperature Note Tamb = 25 °C, unless otherwise specified Document Number: 81129 Rev. 1.3, 29-Mar-10 For technical questions, contact: optochipsupport@vishay.com www.vishay.com 1 T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip BASIC CHARACTERISTICS (1) TEST CONDITION SYMBOL Forward voltage PARAMETER IF = 100 mA VF MIN. TYP. 1.44 V Radiant power (2) IF = 100 mA φe 23 mW Radiant intensity (3) IF = 100 mA Ie 3.3 mW/sr Radiant power (epoxy encapsulated) IF = 100 mA φe 52 mW Radiant power chip (4) IF = 50 mA φe 5.9 mW Temperature coefficient of radiant power IF = 100 mA TKφe - 0.35 %/K Reverse voltage IR = 10 µA VR 18 V Temperature coefficient of forward voltage IF = 1 mA TKVF - 1.8 mV/K deg 4.5 5 MAX. UNIT Angle of half intensity IF = 100 mA ϕ > ± 80 Peak wavelength IF = 30 mA λp 850 nm Spectral bandwidth IF = 30 mA λ0.5 34 nm Rise time/fall time IF = 100 mA tr, tf 25 50 ns Notes (1) T amb = 25 °C, unless otherwise specified (2) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (3) The radiant intensity, I , is measured on the geometric axis of the TO-18 header e (4) The radiant power, φ , is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer e BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified ϕe rel - Relative Radiant Power 1.25 - 70° - 80° 90° 80° 70° - 60° 1.0 60° - 50° IF = 30 mA 50° - 40° 0.75 40° - 30° 0.5 0° 100 750 800 850 900 950 1000 1050 21596 λ - Wavelength (nm) 21595 20° - 10° 0.25 0 700 30° - 20° Fig. 1 - Relative Spectral Emission φe rel = f (λ) 10° 0° 50 0 50 100 Relative Angular Intensity Fig. 2 - Radiant Characteristics Irel = f(ϕ) DIMENSIONS Electrode pattern: Sectional view (schematic): P (anode) side anode N (cathode) side P-type GaAlAs typ. 140 µm P-type GaAlAs N-type GaAlAs 21597 Fig. 3 www.vishay.com 2 For technical questions, contact: optochipsupport@vishay.com Document Number: 81129 Rev. 1.3, 29-Mar-10 T8514VB Specification of GaAlAs IR Emitting Diode Chip Vishay Semiconductors MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.37 Length of chip edge (y-direction) Ly 0.37 mm Emission area AE 0.325 x 0.325 mm2 Die height H 0.17 mm Diameter of bondpad d 0.14 mm ADDITIONAL INFORMATION mm (1) Frontside metallization, anode Aluminum Backside metallization, cathode Gold alloy Dicing Sawing Die bonding technology Epoxy bonding Note (1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Document Number: 81129 Rev. 1.3, 29-Mar-10 For technical questions, contact: optochipsupport@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1