TA6F6.8A thru TA6F51A
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Vishay General Semiconductor
Surface-Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
eSMP® Series
• Very low profile - typical height of 0.95 mm
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
Top View
Bottom View
• Unidirectional only
SlimSMA (DO-221AC)
Cathode
• Ideal for automated placement
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
Anode
• AEC-Q101 qualified
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR
6.8 V to 51 V
VWM
5.8 V to 43.6 V
PPPM (10 x 1000 μs)
600 W
PD at TM = 65 °C
6W
TJ max.
185 °C
Polarity
Unidirectional
Package
SlimSMA (DO-221AC)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SlimSMA (DO-221AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with a 10/1000 μs waveform
PPPM (1)
600
W
Peak pulse current
with a 10/1000 μs waveform
IPPM (1)
See next table
A
Power dissipation on infinite heat sink, TM = 65 °C
PD (2)
6
Power dissipation, TM = 25 °C
PD (3)
1.1
TJ , TSTG
-65 to +185
Operating junction and storage temperature range
W
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Power dissipation mounted on infinite heat sink
(3) Power dissipation mounted on minimum recommended pad layout
Revision: 16-Apr-2020
Document Number: 89939
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
MIN.
NOM.
MAX.
STAND-OFF
TEST
CURRENT VOLTAGE
VWM
IT
(mA)
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE AT
VWM
IR
(μA)
MAXIMUM MAXIMUM
TYPICAL
PEAK PULSE CLAMPING
TEMP.
SURGE
VOLTAGE COEFFICIENT
CURRENT
AT IPPM
OF VBR (2)
IPPM
VC
αT
(%/°C)
(A)
(V)
TA6F6.8A
AEP
6.45 6.80 7.14
10
5.80
500
1000
57.1
250
500
53.1
TA6F7.5A
AGP
7.13 7.50 7.88
10
6.40
100
200
49.6
TA6F8.2A
AKP
7.79 8.20 8.61
10
7.02
25
50
44.8
TA6F9.1A
AMP
8.65 9.10 9.55
1.0
7.78
5.0
20
41.4
TA6F10A
APP
9.5
10.0 10.5
1.0
8.55
TA6F11A
ARP
10.5 11.0 11.6
1.0
9.40
2.0
5.0
38.5
2.0
5.0
35.9
TA6F12A
ATP
11.4 12.0 12.6
1.0
10.2
2.0
5.0
33.0
TA6F13A
AVP
12.4 13.0 13.7
1.0
11.1
TA6F15A
AXP
14.3 15.0 15.8
1.0
12.8
1.0
5.0
28.3
TA6F16A
AZP
15.2 16.0 16.8
1.0
13.6
1.0
5.0
26.7
TA6F18A
BEP
17.1 18.0 18.9
1.0
15.3
1.0
5.0
23.5
TA6F20A
BGP
19.0 20.0 21.0
1.0
17.1
1.0
5.0
21.7
TA6F22A
BKP
20.9 22.0 23.1
1.0
18.8
1.0
5.0
19.6
TA6F24A
BMP
22.8 24.0 25.2
1.0
20.5
1.0
5.0
18.1
TA6F27A
BPP
25.7 27.0 28.4
1.0
23.1
1.0
5.0
16.0
TA6F30A
BRP
28.5 30.0 31.5
1.0
25.6
1.0
5.0
14.5
TA6F33A
BTP
31.4 33.0 34.7
1.0
28.2
1.0
5.0
13.1
TA6F36A
BVP
34.2 36.0 37.8
1.0
30.8
1.0
5.0
12.0
TA6F39A
BXP
37.1 39.0 41.0
1.0
33.3
1.0
5.0
11.1
10.0
10.1
TA6F43A
BZP
40.9 43.0 45.2
1.0
36.8
1.0
10.0
9.3
TA6F47A
CEP
44.7 47.0 49.4
1.0
40.2
1.0
10.0
8.6
TA6F51A
CGP
48.5 51.0 53.6
1.0
43.6
1.0
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
0.047
0.052
0.056
0.060
0.064
0.067
0.070
0.072
0.076
0.078
0.080
0.082
0.084
0.085
0.087
0.088
0.089
0.090
0.091
0.092
0.092
0.093
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
(1)
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
RθJA
RθJM(2)
VALUE
UNIT
145
20
°C/W
°C/W
Notes
Mounted on minimum recommended pad layout
(2) Mounted on infinite heat sink
(1)
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
IEC 61000-4-2
TEST TYPE
Human body model (contact mode)
Human body model (air discharge mode)
TEST CONDITIONS
SYMBOL
CLASS
VALUE
C = 150 pF, R = 330 Ω
VC
4
> 8 kV
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
TA6F6.8AHM3_A/H (1)
TA6F6.8AHM3_A/I (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.032
0.032
H
I
3500
14 000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 16-Apr-2020
Document Number: 89939
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
1
0.1
Measured at Zero Bias
1000
Measured at Stand-off
Voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
100
1000
10 000
1
10
td - Pulse Width (μs)
VBR - Break-down Voltage (V)
Fig. 4 - Typical Junction Capacitance
7
100
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
Fig. 1 - Peak Pulse Power Rating Curve
75
50
25
TA=TM, mounted on inifinite
heatsink
6
5
4
3
2
FR-4 Board, on Minimum
Recommended Pad Layout
1
0
0
0
25
50
75
100
125
150
175
0
200
TJ = 25 °C
Pulse Width (td) is
defined as the Point
Where the Peak Current
decays to 50 % of IPPM
tr = 10 μs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td = 1000 μs
td
0
0
1.0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
3.0
50
75
100
125
150
175
200
4.0
Fig. 5 - Power Dissipation Derating Curve
Transient Thermal Impedance (°C/W)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
25
TA - Ambient Temperature (°C)
TJ - Initial Temperature (°C)
IPPM - Peak Pulse Current (% IRSM)
100
1000
100
10
1
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Apr-2020
Document Number: 89939
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimSMA (DO-221AC)
Cathode Band
0.057 (1.45)
0.049 (1.25)
0.106 (2.70)
0.098 (2.50)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.047 (1.20)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
0.039 (1.00)
0.035 (0.90)
0.060 (1.52)
MIN.
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.047 (1.20)
MIN.
Revision: 16-Apr-2020
Document Number: 89939
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000