TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Very low profile - typical height of 0.95 mm
SlimSMATM
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Ideal for automated placement
Bottom View
Top View
DO-221AC
• Uni-directional only
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
PRIMARY CHARACTERISTICS
VBR
6.8 V to 51 V
VWM
5.8 V to 43.6 V
PPPM (10 x 1000 μs)
600 W
PD at TM = 65 °C
6W
TJ max.
185 °C
Polarity
Uni-directional
Package
DO-221AC (SlimSMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
SYMBOL
VALUE
UNIT
with a 10/1000 μs waveform
PPPM (1)
600
W
with a 10/1000 μs waveform
(1)
See next table
A
IPPM
(2)
Power dissipation on infinite heat sink, TM = 65 °C
PD
Power dissipation, TM = 25 °C
PD (3)
1.1
TJ , TSTG
-65 to +185
Operating junction and storage temperature range
6
W
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Power dissipation mounted on infinite heat sink
(3) Power dissipation mounted on minimum recommended pad layout
Revision: 18-Apr-16
Document Number: 89939
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
DEVICE
(V)
MARKING
CODE
MIN. MAX.
TA6F6.8A
TA6F7.5A
TA6F8.2A
TA6F9.1A
TA6F10A
TA6F11A
TA6F12A
TA6F13A
TA6F15A
TA6F16A
TA6F18A
TA6F20A
TA6F22A
TA6F24A
TA6F27A
TA6F30A
TA6F33A
TA6F36A
TA6F39A
TA6F43A
TA6F47A
TA6F51A
AEP
AGP
AKP
AMP
APP
ARP
ATP
AVP
AXP
AZP
BEP
BGP
BKP
BMP
BPP
BRP
BTP
BVP
BXP
BZP
CEP
CGP
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
500
250
100
25
5.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE AT
VWM
IR
(μA)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC
(V)
1000
500
200
50
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
10.0
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.5
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
Note
(1) Pulse test: t 50 ms
p
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
SYMBOL
VALUE
UNIT
RJA (1)
RJM(2)
145
20
°C/W
°C/W
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heat sink
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
IEC 61000-4-2
TEST TYPE
Human body model (contact mode)
Human body model (air discharge mode)
TEST CONDITIONS
SYMBOL
CLASS
VALUE
C = 150 pF, R = 330
VC
4
> 8 kV
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
TA6F6.8AHM3/6A (1)
TA6F6.8AHM3/6B (1)
TA6F6.8AHM3_A/H (1)
TA6F6.8AHM3_A/I (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.032
0.032
0.032
0.032
6A
6B
H
I
3500
14 000
3500
14 000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 18-Apr-16
Document Number: 89939
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
1
0.1
Measured at Zero Bias
1000
Measured at Stand-off
Voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
100
1000
10 000
1
10
td - Pulse Width (μs)
VBR - Break-down Voltage (V)
Fig. 4 - Typical Junction Capacitance
7
100
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
Fig. 1 - Peak Pulse Power Rating Curve
75
50
25
TA=TM, mounted on inifinite
heatsink
6
5
4
3
2
FR-4 Board, on Minimum
Recommended Pad Layout
1
0
0
0
25
50
75
100
125
150
175
0
200
TJ = 25 °C
Pulse Width (td) is
defined as the Point
Where the Peak Current
decays to 50 % of IPPM
tr = 10 μs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td = 1000 μs
td
0
0
1.0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
3.0
50
75
100
125
150
175
200
4.0
Fig. 5 - Power Dissipation Derating Curve
Transient Thermal Impedance (°C/W)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
25
TA - Ambient Temperature (°C)
TJ - Initial Temperature (°C)
IPPM - Peak Pulse Current (% IRSM)
100
1000
100
10
1
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-Apr-16
Document Number: 89939
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-221AC (SlimSMA)
Cathode Band
0.057 (1.45)
0.049 (1.25)
0.106 (2.70)
0.098 (2.50)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.047 (1.20)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
0.039 (1.00)
0.035 (0.90)
0.060 (1.52)
MIN.
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.047 (1.20)
MIN.
Revision: 18-Apr-16
Document Number: 89939
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000