TA6L6.8A thru TA6L51A
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Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
eSMP® Series
• Low-profile package
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability and
automotive requirement
• Unidirectional only
Top View
Bottom View
• Excellent clamping capability
• Peak pulse power: 600 W (10 μs/1000 μs)
SlimSMAW (DO-221AD)
Cathode
• AEC-Q101 qualified available,
HM3 suffix meets JESD 201 class 2 whisker test
Anode
• Compatible to SOD-128 package case outline
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
TYPICAL APPLICATIONS
3D Models
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for automotive.
PRIMARY CHARACTERISTICS
VBR
6.8 V to 51 V
VWM
5.8 V to 43.6 V
PPPM (10 x 1000 μs)
600 W
TJ max.
185 °C
MECHANICAL DATA
Case: SlimSMAW (DO-221AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Polarity
Unidirectional
Package
SlimSMAW (DO-221AD)
Circuit configuration
Single
Terminals: matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10 μs/1000 μs waveform (fig. 1) (1)
Peak pulse current with a 10 μs/1000 μs waveform (fig. 3)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
600
W
IPPM
See table next page
A
TJ, TSTG
-65 to +185
°C
(1)
Note
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
Revision: 17-Sep-2021
Document Number: 87415
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6L6.8A thru TA6L51A
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
STANDTEST
OFF
CURRENT
VOLTAGE
IT
VWM
(mA)
(V)
MIN. NOM. MAX.
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID
(μA)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
TYPICAL
CLAMPING
TEMP.
VOLTAGE COEFFICIENT
AT IPPM
OF VBR (3)
VC
αT
(%/°C)
(V)
TA6L6.8A
AEL
6.45
6.80
7.14
10
5.80
500
1000
57.1
10.5
0.047
TA6L7.5A
AGL
7.13
7.50
7.88
10
6.40
250
500
53.1
11.3
0.052
TA6L8.2A
AKL
7.79
8.20
8.61
10
7.02
100
200
49.6
12.1
0.056
TA6L9.1A
AML
8.65
9.10
9.55
1.0
7.78
25
50
44.8
13.4
0.060
TA6L10A
APL
9.5
10.0
10.5
1.0
8.55
5.0
20
41.4
14.5
0.064
TA6L11A
ARL
10.5
11.0
11.6
1.0
9.40
2.0
5.0
38.5
15.6
0.067
TA6L12A
ATL
11.4
12.0
12.6
1.0
10.2
2.0
5.0
35.9
16.7
0.070
TA6L13A
AVL
12.4
13.0
13.7
1.0
11.1
2.0
5.0
33.0
18.2
0.072
TA6L15A
AXL
14.3
15.0
15.8
1.0
12.8
1.0
5.0
28.3
21.2
0.076
TA6L16A
AZL
15.2
16.0
16.8
1.0
13.6
1.0
5.0
26.7
22.5
0.078
TA6L18A
BEL
17.1
18.0
18.9
1.0
15.3
1.0
5.0
23.5
25.5
0.080
TA6L20A
BGL
19.0
20.0
21.0
1.0
17.1
1.0
5.0
21.7
27.7
0.082
TA6L22A
BKL
20.9
22.0
23.1
1.0
18.8
1.0
5.0
19.6
30.6
0.084
TA6L24A
BML
22.8
24.0
25.2
1.0
20.5
1.0
5.0
18.1
33.2
0.085
TA6L27A
BPL
25.7
27.0
28.4
1.0
23.1
1.0
5.0
16.0
37.5
0.087
TA6L30A
BRL
28.5
30.0
31.5
1.0
25.6
1.0
5.0
14.5
41.4
0.088
TA6L33A
BTL
31.4
33.0
34.7
1.0
28.2
1.0
5.0
13.1
45.7
0.089
TA6L36A
BVL
34.2
36.0
37.8
1.0
30.8
1.0
5.0
12.0
49.9
0.090
TA6L39A
BXL
37.1
39.0
41.0
1.0
33.3
1.0
5.0
11.1
53.9
0.091
TA6L43A
BZL
40.9
43.0
45.2
1.0
36.8
1.0
5.0
10.1
59.3
0.092
TA6L47A
CEL
44.7
47.0
49.4
1.0
40.2
1.0
5.0
9.3
64.8
0.092
TA6L51A
CGL
48.5
51.0
53.6
1.0
43.6
1.0
5.0
8.6
70.1
0.093
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate V
BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance
SYMBOL
TYP.
MAX.
UNIT
RθJA (1)
120
150
°C/W
12
15
°C/W
RθJM
(2)
Notes
(1) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A,device mounted on FR4 PCB, 2 oz. standard footprint
(2) Thermal resistance junction-to-mount to follow JEDEC® 51-14 using Transient Dual Interface Test Method (TDIM)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TA6L6.8AHM3/H (1)
0.033
H
3500
7" diameter plastic tape and reel
TA6L6.8AHM3/I (1)
0.033
I
14 000
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 17-Sep-2021
Document Number: 87415
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6L6.8A thru TA6L51A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)
Axis Title
150
tr = 10 µs
1
10000
1000
100
Peak value IPPM
Half value IPPM - IPPM/2
50
100
10/1000µs waveform
td
0.1
10
100
1000
10
0
10 000
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
tp - Time (ms)
td - Pulse Width (μs)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
10 000
100
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
TJ = 25 °C
Pulse width (td) is defined
as the point where the peak
current decays to 50 % of IPPM
1st line
2nd line
2nd line
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
10
75
50
25
0
Measured at zero bias
1000
Measured at
stand-off voltage, VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
25
50
75
100
125
150
175
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
1
10
100
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
Note
• Fig. 1, power calculations is based on IPPM times defined maximum clamping voltage by pulse width
Revision: 17-Sep-2021
Document Number: 87415
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA6L6.8A thru TA6L51A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimSMAW (DO-221AD)
Cathode band
0.106 (2.70)
0.075 (1.90)
0.063 (1.60)
0.091 (2.30)
0.032 (0.81)
0.014 (0.36)
0.158 (4.00)
0.142 (3.60)
0.024 (0.60)
0.012 (0.30)
0.197 (5.00)
0.173 (4.40)
0.043 (1.10)
0.035 (0.90)
0.083 (2.10) min.
0.009 (0.22)
0.004 (0.10)
0.055 (1.40) min.
0.118 (3.00) max.
0.055 (1.40) min.
0.228 (5.80) ref.
Mounting pad layout
Revision: 17-Sep-2021
Document Number: 87415
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000