TCDT1100, TCDT1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output
FEATURES
NC
C
E
6
5
4
• Isolation test voltage 5000 VRMS
• High common mode rejection
• No base terminal connection for improved noise
immunity
17201_3
1
2
3
• CTR offered in 4 groups
A (+)
C (–)
NC
• Thickness though insulation ≥ 0.4 mm
V
D E
• Creepage current resistance according to VDE0303/
IEC 60112 comparative tracking index: CTI ≥ 275
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
17201_4
DESCRIPTION
APPLICATIONS
The TCDT1100, TCDT1100G series consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6 pin plastic dual inline package.
The base of the phototransistor is not connected providing
noise immunity.
• Switch-mode power supplies
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-5 (VDE0884)
Optocoupler for electrical safety requirements
• VDE0804
Telecommunication apparatus and data processing
electronic
and
in
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5
AGENCY APPROVALS
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
• IEC 60065
Safety for mains-operated
household apparatus
and
• UL1577, file no. E52744, double protection
• BSI IEC 60950; IEC 60065 pending
• DIN EN 60747-5-5 (VDE0884)
• FIMKO
related
ORDER INFORMATION
PART
REMARKS
TCDT1100
CTR > 40 %, DIP-6
TCDT1101
CTR 40 % to 80 %, DIP-6
TCDT1102
CTR 63 % to 125 %, DIP-6
TCDT1103
CTR 100 % to 200 %, DIP-6
TCDT1100G
CTR > 40 %, DIP-6, 400 mil
TCDT1101G
CTR 40 % to 80 %, DIP-6, 400 mil
TCDT1102G
CTR 63 % to 125 %, DIP-6, 400 mil
TCDT1103G
CTR 100 % to 200 %, DIP-6, 400 mil
Note
• G = leadform 10.16 mm; G is not marked on the body.
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83535
Rev. 1.7, 09-Mar-10
TCDT1100, TCDT1100G
Optocoupler, Phototransistor Output Vishay Semiconductors
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 µs
IFSM
3
A
Pdiss
70
mW
Tj
125
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
mA
Power dissipation
Junction temperature
OUTPUT
Collector current
IC
50
ICM
100
mA
Pdiss
70
mW
Tj
125
°C
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
Ptot
200
mW
Ambient temperature range
Tamb
- 55 to + 110
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
COUPLER
Soldering temperature (2)
2 mm from case, t ≤ 10 s
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
VR = 0, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
VCE = 20 V, IF = 0, E = 0
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.6
pF
Junction capacitance
V
pF
OUTPUT
Collector ermitter cut-off current
200
nA
COUPLER
Coupling capacitance
0.3
V
Note
(1) Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83535
Rev. 1.7, 09-Mar-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
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TCDT1100, TCDT1100G
Vishay Semiconductors Optocoupler, Phototransistor Output
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IC/IF
VCE = 5 V, IF = 10 mA
PART
SYMBOL
TCDT1100
CTR
TCDT1100G
CTR
TCDT1101
CTR
TCDT1101G
CTR
TCDT1102
CTR
TCDT1102G
CTR
TCDT1103
CTR
TCDT1103G
CTR
MIN.
TYP.
MAX.
UNIT
%
40
%
40
80
63
125
100
200
%
%
%
%
%
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
130
mA
Pdiss
265
mW
VIOTM
6
kV
Tsi
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
•
According to DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.6
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 1)
VIOTM
6
kV
Vpd
1.3
kV
Insulation resistance
TYP.
MAX.
UNIT
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
VIOTM
t1, t2
t3 , t4
ttest
tstres
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
VIOWM
VIORM
0
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 1 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83535
Rev. 1.7, 09-Mar-10
TCDT1100, TCDT1100G
Optocoupler, Phototransistor Output Vishay Semiconductors
SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
Delay time
PARAMETER
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
td
MIN.
TYP.
4
MAX.
UNIT
µs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
tr
7
µs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
tf
6.7
µs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
ts
0.3
µs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
ton
11
µs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2)
toff
7
µs
Turn-on time
VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3)
ton
25
µs
Turn-off time
VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3)
toff
42.5
µs
IF
0
IF
0
+5V
IF
IC = 5 mA; adjusted through
input amplitude
RG = 50
tp
= 0.01
T
tp = 50 µs
50
100
Oscilloscope
RL 1 M
CL 20 pF
95 10900
Fig. 2 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
10 %
0
Channel I
Channel II
tp
IC
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 4 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 3 - Test Circuit, Saturated Operation
Document Number: 83535
Rev. 1.7, 09-Mar-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
779
TCDT1100, TCDT1100G
Vishay Semiconductors Optocoupler, Phototransistor Output
PACKAGE DIMENSIONS in millimeters
DIP-6
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
1.2 ± 0.1
14771_2
6
5
1
2 3
4.5 ± 0.3
0.5 ± 0.1
2.8 ± 0.15
4.5 ± 0.3
0.25
4
7.62 to 10.3
DIP-6, 400 mil
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
0.5 ± 0.1
1.2 ± 0.1
4.5 ± 0.3
2.8 ± 0.15
4.5 ± 0.3
0.25
10.16 (typ.)
14771_1
6
5
4
1
2 3
PACKAGE MARKING
TCDT1100
V YWW 24
21764-52
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780
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83535
Rev. 1.7, 09-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1