TCDT1100G

TCDT1100, TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES NC C E 6 5 4 • Isolation test voltage 5000 VRMS • High common mode rejection • No base terminal connection for improved noise immunity 17201_3 1 2 3 • CTR offered in 4 groups A (+) C (–) NC • Thickness though insulation ≥ 0.4 mm V D E • Creepage current resistance according to VDE0303/ IEC 60112 comparative tracking index: CTI ≥ 275 • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC 17201_4 DESCRIPTION APPLICATIONS The TCDT1100, TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. • Switch-mode power supplies VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 (VDE0884) Optocoupler for electrical safety requirements • VDE0804 Telecommunication apparatus and data processing electronic and in • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 AGENCY APPROVALS • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • IEC 60065 Safety for mains-operated household apparatus and • UL1577, file no. E52744, double protection • BSI IEC 60950; IEC 60065 pending • DIN EN 60747-5-5 (VDE0884) • FIMKO related ORDER INFORMATION PART REMARKS TCDT1100 CTR > 40 %, DIP-6 TCDT1101 CTR 40 % to 80 %, DIP-6 TCDT1102 CTR 63 % to 125 %, DIP-6 TCDT1103 CTR 100 % to 200 %, DIP-6 TCDT1100G CTR > 40 %, DIP-6, 400 mil TCDT1101G CTR 40 % to 80 %, DIP-6, 400 mil TCDT1102G CTR 63 % to 125 %, DIP-6, 400 mil TCDT1103G CTR 100 % to 200 %, DIP-6, 400 mil Note • G = leadform 10.16 mm; G is not marked on the body. www.vishay.com 776 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535 Rev. 1.7, 09-Mar-10 TCDT1100, TCDT1100G Optocoupler, Phototransistor Output Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS PARAMETER (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA Forward surge current tp ≤ 10 µs IFSM 3 A Pdiss 70 mW Tj 125 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current IC 50 ICM 100 mA Pdiss 70 mW Tj 125 °C Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 200 mW Ambient temperature range Tamb - 55 to + 110 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature COUPLER Soldering temperature (2) 2 mm from case, t ≤ 10 s Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER (1) (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.6 pF Junction capacitance V pF OUTPUT Collector ermitter cut-off current 200 nA COUPLER Coupling capacitance 0.3 V Note (1) Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83535 Rev. 1.7, 09-Mar-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 777 TCDT1100, TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IC/IF VCE = 5 V, IF = 10 mA PART SYMBOL TCDT1100 CTR TCDT1100G CTR TCDT1101 CTR TCDT1101G CTR TCDT1102 CTR TCDT1102G CTR TCDT1103 CTR TCDT1103G CTR MIN. TYP. MAX. UNIT % 40 % 40 80 63 125 100 200 % % % % % % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note • According to DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 1) VIOTM 6 kV Vpd 1.3 kV Insulation resistance TYP. MAX. UNIT kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω VIOTM t1, t2 t3 , t4 ttest tstres = 1 to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM 0 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 1 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 www.vishay.com 778 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535 Rev. 1.7, 09-Mar-10 TCDT1100, TCDT1100G Optocoupler, Phototransistor Output Vishay Semiconductors SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) td MIN. TYP. 4 MAX. UNIT µs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) tr 7 µs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) tf 6.7 µs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) ts 0.3 µs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) ton 11 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 2) toff 7 µs Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) ton 25 µs Turn-off time VS = 5 V, IC = 10 mA, RL = 1 kΩ, (see figure 3) toff 42.5 µs IF 0 IF 0 +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs 50 100 Oscilloscope RL 1 M CL 20 pF 95 10900 Fig. 2 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 Channel I Channel II tp IC tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 4 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 3 - Test Circuit, Saturated Operation Document Number: 83535 Rev. 1.7, 09-Mar-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 779 TCDT1100, TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output PACKAGE DIMENSIONS in millimeters DIP-6 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 1.2 ± 0.1 14771_2 6 5 1 2 3 4.5 ± 0.3 0.5 ± 0.1 2.8 ± 0.15 4.5 ± 0.3 0.25 4 7.62 to 10.3 DIP-6, 400 mil 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 0.5 ± 0.1 1.2 ± 0.1 4.5 ± 0.3 2.8 ± 0.15 4.5 ± 0.3 0.25 10.16 (typ.) 14771_1 6 5 4 1 2 3 PACKAGE MARKING TCDT1100 V YWW 24 21764-52 www.vishay.com 780 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83535 Rev. 1.7, 09-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1