TCDT1123

TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES NC C E 6 5 4 • High common mode rejection • Four CTR groups available • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS 1 2 3 A (+) C (–) NC 17201_6 V D E • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against electrical shock (safety class II) 17201_4 DESCRIPTION The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual in line package. • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI IEC 60950 IEC 60065 • DIN EN 60747-5-5 (VDE 0884) • FIMKO • cUL tested to CSA 22.2 bulletin 5A ORDER INFORMATION (1) PART REMARKS TCDT1120 CTR > 40 %, DIP-6 TCDT1122 CTR 63 % to 125 %, DIP-6 TCDT1123 CTR 100 % to 200 %, DIP-6 TCDT1124 CTR 160 % to 320 %, DIP-6 TCDT1120G CTR > 40 %, DIP-6 TCDT1122G CTR 63 % to 125 %, DIP-6 TCDT1123G CTR 100 % to 200 %, DIP-6 TCDT1124G CTR 160 % to 320 %, DIP-6 Note (1) G = leadform 10.16 mm; G is not marked on the body. Document Number: 83532 Rev. 1.7, 28-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 789 TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA IFSM 3 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V tp ≤ 10 μs Forward surge current Power dissipation Junction temperature OUTPUT Collector current Collector peak current IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature (2) t=1s 2 mm from case, t ≤ 10 s Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS PARAMETER (1) TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage Junction capacitance IF = 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 V pF OUTPUT IC = 100 μA VCBO 90 Collector emitter voltage IC = 1 mA VCEO 90 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 A ICEO Collector base voltage Collector ermitter cut-off current V 150 nA COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCEsat VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF 0.3 V Note (1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 790 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83532 Rev. 1.7, 28-Oct-09 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART TCDT1120 TCDT1120G TCDT1122 VCE = 5 V, IF = 1 mA TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G IC/IF TCDT1120 TCDT1120G TCDT1122 VCE = 5 V, IF = 10 mA TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G MAXIMUM SAFETY RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CTR 10 % CTR 15 % CTR 30 % CTR 60 % CTR 40 % CTR 63 125 % CTR 100 200 % CTR 160 320 % (1) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note (1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb ≤ 100 °C RIO 1011 Ω VIO = 500 V, Tamb ≤ 150 °C (construction test only) RIO 109 Ω Insulation resistance Document Number: 83532 Rev. 1.7, 28-Oct-09 TYP. For technical questions, contact: optocoupleranswers@vishay.com MAX. UNIT kV www.vishay.com 791 TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output 300 VIOTM Psi (mW) 250 t1, t2 t3 , t4 ttest tstres 200 150 VPd 100 VIOWM VIORM = 1 to 10 s =1s = 10 s = 12 s I si (mA) 50 0 0 0 95 10934 25 50 75 t3 ttest t4 100 125 150 175 200 13930 Tamb - Ambeint Temperature(°C) t1 tTr = 60 s t2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART TCDT1120 TCDT1120G Current time VS = 5 V, RL = 100 Ω, (see figure 3) TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G Delay time VS = 5 V, RL = 100 Ω, (see figure 3) TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G Rise time VS = 5 V, RL = 100 Ω, (see figure 3) TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G Storage time VS = 5 V, RL = 100 Ω, (see figure 3) TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G Fall time VS = 5 V, RL = 100 Ω, (see figure 3) TCDT1123 TCDT1123G TCDT1124 TCDT1124G www.vishay.com 792 SYMBOL MIN. TYP. MAX. UNIT IF 10 mA IF 10 mA IF 10 mA tD 2.5 μs tD 2.8 μs tD 2 μs tr 3 μs tr 4.2 μs tr 4 μs ts 0.3 μs ts 0.3 μs ts 0.3 μs tf 3.7 μs tf 4.7 μs tf 4.7 μs For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83532 Rev. 1.7, 28-Oct-09 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART TCDT1120 TCDT1120G VS = 5 V, RL = 100 Ω, (see figure 3) Turn-on time TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G VS = 5 V, RL = 100 Ω, (see figure 3) Turn-off time TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G VS = 5 V, RL = 1 kΩ, (see figure 4) Turn-on time TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G VS = 5 V, RL = 1 kΩ, (see figure 4) Turn-off time TCDT1123 TCDT1123G TCDT1124 TCDT1124G SYMBOL MIN. TYP. MAX. UNIT ton 5.5 μs ton 7 μs ton 6 μs toff 4 μs toff 5 μs toff 5 μs ton 16.5 μs ton 21.5 μs ton 20 μs toff 22.5 μs toff 37.5 μs toff 50 μs TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IF IF 0 tp IC t 100 % 90 % I C = 2 mA; adjusted through input amplitude R G = 50 Ω tp = 0.01 T t p = 50 µs 10 % 0 tr td t on tp td tr t on (= td + tr) +5V IF 0 Pulse duration Delay time Rise time Turn-on time ts tf Channel II 50 Ω Storage time Fall time Turn-off time Oscilloscope R L = 1 MΩ C L = 20 pF 100 Ω 95 10804 96 11698 Fig. 3 - Switching Times Document Number: 83532 Rev. 1.7, 28-Oct-09 t t off ts tf t off (= ts + tf) Channel I Fig. 4 - Test Circuit, Non-Saturated Operation For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 793 TCDT1120, TCDT1120G IF +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF Channel II 50 Ω 1 kΩ CTR rel - Relative Current Transfer Ratio Vishay Semiconductors Optocoupler, Phototransistor Output 1.5 VCE = 5 V I F = 10 mA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C) 96 11918 95 10843 Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Ptot - Total Power Dissipation (mW) Fig. 5 - Test Circuit, Saturated Operation 300 ICEO - Collector Dark Current, with Open Base (nA) 10 000 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 40 80 120 Tamb - Ambient Temperature (°C) 96 11700 25 50 75 100 Tamb - Ambient Temperature (°C) 100 I C - Collector Current (mA) IF - Forward Current (mA) 10 Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage www.vishay.com 794 100 95 11038 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 96 11862 1000 1 0 0 0 VCE = 30 V IF = 0 VCE = 5 V 10 1 0.1 0.01 0.1 95 11040 1 10 100 IF - Forward Current (mA) Fig. 10 - Collector Current vs. Forward Current For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83532 Rev. 1.7, 28-Oct-09 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors 1000 I C - Collector Current (mA) I F = 50 mA 20 mA 10 10 mA 5 mA 1 2 mA 1 mA CTR - CurrentTransfer Ratio (%) 100 TCDT1123(G) V CE = 5 V 100 10 CNY75A 0.1 0.1 1 10 VCE - Collector Emitter Voltage (V) 95 11041 1 100 0.1 Fig. 11 - Collector Current vs. Collector Emitter Voltage 1000 0.8 CNY75A used 0.6 0.4 20 % used 0.2 10 % used CTR - Current Transfer Ratio (%) CTR = 50 % used VCEsat - Collector Emitter Saturation Voltage (V) 100 10 Fig. 14 - Current Transfer Ratio vs. Forward Current 1.0 0 TCDT1124(G) V CE = 5 V 100 10 1 1 100 10 I C - Collector Current (mA) 95 11034 0.1 1 100 10 I F - Forward Current (mA) 14798 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 15 - Current Transfer Ratio vs. Forward Current 50 1000 TCDT1122(G) V CE = 5 V ton / toff - Turn-on/Turn-off Time (µs) CTR - Current Transfer Ratio (%) 1 I F - Forward Current (mA) 14797 100 10 TCDT1122(G) Saturated Operation VS = 5 V RL=1 kΩ 40 30 toff 20 10 ton 0 1 0.1 14796 1 10 100 I F - Forward Current (mA) Fig. 13 - Current Transfer Ratio vs. Forward Current Document Number: 83532 Rev. 1.7, 28-Oct-09 0 14799 5 10 15 20 I F - Forward Current (mA) Fig. 16 - Turn-on/off Time vs. Forward Current For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 795 TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output TCDT1123(G) saturated operation V S = 5V RL=1k Ω 40 20 ton / toff - Turn-on/Turn-off Time (µs) ton / toff - Turn-on/Turn-off Time (µs) 50 30 toff 20 10 ton 15 10 ton 5 toff 0 0 0 5 10 20 15 I F - Forward Current (mA) 14800 0 2 4 6 8 10 I C - Collector Current (mA) 14803 Fig. 17 - Turn-on/off Time vs. Forward Current Fig. 20 - Turn-on/off Time vs. Collector Current 20 toff TCDT1124(G) saturated operation VS = 5 V R L=1k Ω 40 ton / toff - Turn-on/Turn-off Time (µs) 50 ton / toff - Turn-on/Turn-off Time (µs) TCDT1123(G) non- saturated operation VS = 5 V RL=100 Ω 30 20 10 ton 0 0 5 10 20 15 I F - Forward Current (mA) 14801 Fig. 18 - Turn-on/off Time vs. Forward Current 15 ton 10 toff 5 0 0 14804 TCDT1124(G) non- saturated operation VS = 5 V RL=100 Ω 2 4 6 8 10 I C - Collector Current (mA) Fig. 21 - Turn-on/off Time vs. Collector Current ton / toff - Turn-on/Turn-off Time (µs) 20 TCDT1122(G) non- saturated operation VS = 5 V R L= 100 Ω 15 ton 10 toff 5 0 0 14802 2 4 6 8 10 I C - Collector Current (mA) Fig. 19 - Turn-on/off Time vs. Collector Current www.vishay.com 796 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83532 Rev. 1.7, 28-Oct-09 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors PACKAGE DIMENSIONS in millimeters DIP-6 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 0.5 ± 0.1 1.2 ± 0.1 14771_2 6 5 1 2 3 4.5 ± 0.3 2.8 ± 0.15 4.5 ± 0.3 0.25 4 7.62 to 9.5 typ. DIP-6, 400 mil 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 0.5 ± 0.1 1.2 ± 0.1 4.5 ± 0.3 2.8 ± 0.15 4.5 ± 0.3 0.25 10.16 (typ.) 14771_1 6 5 4 1 2 3 PACKAGE MARKING TCDT1122 V YWW 24 21764-39 Note Example of making used for the TCDT1122 and TCDT1122G Document Number: 83532 Rev. 1.7, 28-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 797 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000