TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Temperature
FEATURES
• High common mode rejection
C
E
4
3
• Low temperature coefficient of CTR
• CTR offered in 7 groups
• Reinforced
isolation
provides
circuit
protection against electrical shock (safety
class II)
1
2
A
C
• Isolation materials according to UL 94 V-0
• Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21 (IEC 60068 part 1)
• Rated
impulse
VIOTM = 6 kVpeak
17197_4
voltage
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
LINKS TO ADDITIONAL RESOURCES
• Rated
isolation
VIOWM = 600 VRMS
Related
Documents
• Rated
recurring
VIORM = 848 Vpeak
DESCRIPTION
voltage
peak
(RMS
includes
voltage
DC)
(repetitive)
• Creepage current resistance according to VDE 0303 /
IEC 60112 comparative tracking index: CTI ≥ 175
The TCET110. consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead plastic dual inline package.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL 1577
APPLICATIONS
• cUL 1577
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• DIN EN 60747-5-5 (VDE 0884-5)
• For application class I to IV at mains voltage ≤ 300 V
• BSI: EN 62368-1:2014
• For application class I to III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884), suitable for:
• CQC GB4943.1-2011
• CQC GB8898-2011
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
ORDERING INFORMATION
DIP
T
C
E
T
1
1
0
#
PART NUMBER
LEAD FORM
AGENCY
CERTIFIED /
PACKAGE
UL, cUL, VDE,
BSI, CQC
DIP-4
DIP-4, 400 mil
#
7.62 mm
CTR (%)
10 mA
50 to 600
40 to 80
63 to 125
100 to 200
160 to 320
100 to 300
80 to 160
130 to 260
200 to 400
TCET1100
-
TCET1102
TCET1103
-
TCET1106
TCET1107
TCET1108
TCET1109
TCET1100G TCET1101G TCET1102G TCET1103G TCET1104G TCET1106G TCET1107G TCET1108G TCET1109G
Note
• G = lead form 10.16 mm; G is not marked on the body
Document Number: 83503
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
IFSM
1.5
A
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
tp ≤ 10 μs
Forward surge current
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
IC
50
mA
ICM
100
mA
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Operating ambient temperature range
t = 1 min
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-55 to +125
°C
Tsld
260
°C
2 mm from case, ≤ 10 s
Soldering temperature (1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1) Refer to wave profile for soldering conditions for through hole devices
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
100
mW
Output power dissipation
Pdiss
150
mW
Maximum LED junction temperature
Tjmax.
125
°C
Maximum output die junction temperature
Tjmax.
125
°C
Thermal resistance, junction emitter to board
θEB
173
°C/W
Thermal resistance, junction emitter to case
θEC
149
°C/W
Thermal resistance, junction detector to board
θDB
111
°C/W
Thermal resistance, junction detector to case
θDC
127
°C/W
Thermal resistance, junction emitter to
junction detector
θED
173
°C/W
Thermal resistance, board to ambient (1)
θBA
197
°C/W
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
Thermal resistance, case to ambient
(1)
θCA
4041
°C/W
TA
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note
(1) For 2 layer FR4 board (4" x 3" x 0.062")
Document Number: 83503
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-
1.25
1.6
V
VR = 0, f = 1 MHz
Cj
-
50
-
pF
Collector emitter voltage
IC = 1 mA
VCEO
70
-
-
V
Emitter collector voltage
IE = 100 μA
VECO
7
-
-
V
VCE = 20 V, IF = 0 A, E = 0
ICEO
-
10
100
nA
IF = 10 mA, IC = 1 mA
VCEsat
-
-
0.3
V
VCE = 5 V, IF = 10 mA, RL = 100 Ω
fc
-
110
-
kHz
f = 1 MHz
Ck
-
0.3
-
pF
Junction capacitance
OUTPUT
Collector emitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 1 mA
VCE = 5 V, IF = 5 mA
IC/IF
VCE = 5 V, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
TCET1101G
CTR
13
30
-
%
TCET1102,
TCET1102G
CTR
22
45
-
%
TCET1103,
TCET1103G
CTR
34
70
-
%
TCET1104G
CTR
56
90
-
%
TCET1100,
TCET1100G
CTR
50
-
600
%
TCET1106,
TCET1106G
CTR
100
-
300
%
TCET1107,
TCET1107G
CTR
80
-
160
%
TCET1108,
TCET1108G
CTR
130
-
260
%
TCET1109,
TCET1109G
CTR
200
-
400
%
TCET1101,
TCET1101G
CTR
40
-
80
%
TCET1102,
TCET1102G
CTR
63
-
125
%
TCET1103,
TCET1103G
CTR
100
-
200
%
TCET1104,
TCET1104G
CTR
160
-
320
%
Document Number: 83503
3
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
-
-
130
mA
Pdiss
-
-
265
mW
VIOTM
-
-
6
kV
Tsi
-
-
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
• According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage routine test
100 %, ttest = 1 s
Vpd
1.6
-
-
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
6
-
-
kV
Vpd
1.3
-
-
kV
VIO = 500 V
RIO
1012
-
-
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
-
-
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
-
-
Ω
Ptot - Total Power Dissipation (mW)
Insulation resistance
VIOTM
300
t1, t2
t3 , t4
ttest
tstres
Phototransistor
Psi (mW)
250
200
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
150
VIOWM
VIORM
100
IR-diode
Isi (mA)
50
0
0
0
25
50
75
100
125
Tsi - Safety Temperature (°C)
949182-1
Fig. 1 - Derating Diagram
150
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5 / DIN EN 60747-; IEC 60747
Document Number: 83503
4
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
td
-
3
-
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
tr
-
3
-
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
ton
-
6
-
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
ts
-
0.3
-
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
tf
-
4.7
-
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see Fig. 3)
toff
-
5
-
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see Fig. 4)
ton
-
9
-
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see Fig. 4)
toff
-
10
-
μs
IF
IF
+5V
IF
0
I C = 2 mA; adjusted through
input amplitude
tp
t
100 %
90 %
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L = 1 MΩ
C L = 20 pF
100 Ω
10 %
0
tr
td
t on
tp
td
tr
t on (= td + tr)
95 10804
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
0
IC
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 4 - Test Circuit, Saturated Operation
Document Number: 83503
5
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
ICEO - Collector Dark Current,
with Open Base (nA)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
1000
100
10
1
0
0
40
80
96 11700
0
120
Tamb - Ambient Temperature (°C)
100
75
100
VCE = 5 V
IC - Collector Current (mA)
IF - Forward Current (mA)
50
Fig. 9 - Collector Dark Current vs. Ambient Temperature
1000
100
10
1
10
1
0.1
0.01
0.1
0.1
0
0.4
0.8
2.0
1.6
1.2
VF - Forward Voltage (V)
96 11862
1
100
10
IF - Forward Current (mA)
95 11027
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Collector Current vs. Forward Current
100
2.0
VCE = 5 V
IF = 5 mA
1.5
1.0
0.5
IC - Collector Current (mA)
CTRrel - Relative Current Transfer Ratio
25
Tamb - Ambient Temperature (°C)
95 11026
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
20 mA
IF = 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0
-25
95 11025
VCE = 20 V
IF = 0
0
25
50
Tamb - Ambient Temperature (°C)
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
75
0.1
95 10985
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Document Number: 83503
6
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
0.8
CTR = 50 %
used
0.6
0.4
0.2
10 % used
0
IC - Collector Current (mA)
CTR - Current Transfer Ratio (%)
1000
VCE = 5 V
100
10
1
0.1
95 11029
1
10
ton
toff
4
2
0
0
100
IF - Forward Current (mA)
Fig. 13 - Current Transfer Ratio vs. Forward Current
2
4
6
8
IC - Collector Current (mA)
95 11030
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
Non-saturated
operation
VS = 5 V
RL = 100 Ω
6
100
10
95 11028
8
Fig. 14 - Turn-On / Off Time vs. Collector Current
ton/toff - Turn-On / Turn-Off Time (µs)
VCEsat - Collector Emitter
Saturation Voltage (V)
20 % used
1
10
ton/toff - Turn-On/Turn-Off Time (µs)
1.0
50
Saturated operation
VS = 5 V
RL = 1 kΩ
40
30
toff
20
10
ton
0
0
95 11031
5
10
15
20
IF - Forward Current (mA)
Fig. 15 - Turn-On / Off Time vs. Forward Current
Document Number: 83503
7
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
TCET1100, TCET1100G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6.5 ± 0.3
Pin 1 identifier
7.62 to 10.3
4.58 ± 0.3
7.62 typ.
0.4 ± 0.15
3.5 ± 0.3 4.5 ± 0.3
2.75 ± 0.15
0° to 15°
1.2 ± 0.1
0.25 typ.
0.5 ± 0.1
2.54 typ.
i178027-4
TCET1100G type
7.62 typ.
3.5 ± 0.3
0.1 min.
2.55 ± 0.25
20802-3
10.16 typ.
PACKAGE MARKING
ET1100
V YWW 24
21764-3
Document Number: 83503
8
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.4, 13-Jan-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
