TCET111., TCET111.G
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Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Temperature, 110 °C, Rated
FEATURES
• CTR offered in 9 groups
C
E
4
3
• Isolation materials according to UL 94 V-0
• Pollution degree 2
(DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21
(IEC 60068 part 1)
1
2
A
C
• Special construction: therefore, extra low coupling
capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Temperature range -40 °C to +110 °C
• Rated
impulse
VIOTM = 6 kVpeak
17197_4
LINKS TO ADDITIONAL RESOURCES
voltage
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated
isolation
VIOWM = 600 VRMS
Related
Documents
voltage
(RMS
includes
DC)
DESCRIPTION
• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
The TCET111., TCET111.G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 175
APPLICATIONS
• External creepage distance > 8 mm
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• for appl. class I to IV at mains voltage 300 V
AGENCY APPROVALS
• Thickness through insulation 4 mm
• for appl. class I to III at mains voltage 600 V according
to DIN EN 60747-5-5 (VDE 0884), suitable for:
• UL
• cUL
- Switch-mode power supplies
• DIN EN 60747-5-5 (VDE 0884)
- Line receiver
• BSI: EN 62368-1:2014
- Computer peripheral interface
- Microprocessor system interface
ORDERING INFORMATION
T
C
E
T
1
1
1
#
PART NUMBER
-
DIP-4
#
PACKAGE
OPTION
7.62 mm
CTR (%)
AGENCY CERTIFIED / PACKAGE
10 mA
UL, cUL, VDE, BSI
100 to 200
DIP-4
TCET1113
-
TCET1113G
TCET1114G
DIP-4, 400 mil
Rev. 2.1, 17-Dec-2020
160 to 320
Document Number: 83546
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
IFSM
1.5
A
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
tp 10 μs
Forward surge current
OUTPUT
Collector current
tp/T = 0.5, tp 10 ms
Collector peak current
IC
50
mA
ICM
100
mA
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Operating ambient temperature range
t=1s
Tamb
-40 to +110
°C
Storage temperature range
Tstg
-55 to +125
°C
Tsld
260
°C
2 mm from case, 10 s
Soldering temperature (1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1) Refer to wave profile for soldering conditions for through hole devices (DIP)
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
70
mW
Output power dissipation
Pdiss
70
mW
Maximum LED junction temperature
Tjmax.
125
°C
Maximum output die junction temperature
Tjmax.
125
°C
Thermal resistance, junction emitter to board
EB
173
°C/W
Thermal resistance, junction emitter to case
EC
149
°C/W
Thermal resistance, junction detector to board
DB
111
°C/W
Thermal resistance, junction detector to case
DC
127
°C/W
Thermal resistance, junction emitter to junction
detector
ED
173
°C/W
BA
197
°C/W
CA
4041
°C/W
Thermal resistance, board to ambient
(1)
Thermal resistance, case to ambient (1)
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note
(1) For 2 layer FR4 board (4" x 3" x 0.062")
Rev. 2.1, 17-Dec-2020
Document Number: 83546
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-
1.25
1.6
V
VR = 0, f = 1 MHz
Cj
-
50
-
pF
Collector emitter voltage
IC = 1 mA
VCEO
70
-
-
V
Emitter collector voltage
IE = 100 μA
VECO
7
-
-
V
VCE = 20 V, IF = 0 A
ICEO
-
10
100
nA
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
-
-
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100
fc
-
110
-
kHz
f = 1 MHz
Ck
-
0.6
-
pF
Junction capacitance
OUTPUT
Collector emitter cut-off current
COUPLER
Coupling capacitance
Note
(1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
TCET1112G
CTR
22
45
-
%
VCE = 5 V, IF = 1 mA
TCET1113,
TCET1113G
CTR
34
70
-
%
TCET1114G
CTR
56
90
-
%
VCE = 5 V, IF = 5 mA
TCET1110G
CTR
50
-
600
%
TCET1112G
CTR
63
-
125
%
TCET1113,
TCET1113G
CTR
100
-
200
%
TCET1114G
CTR
160
-
320
%
VCE = 5 V, IF = 10 mA
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
8
kV
Vpd
1.36
kV
VIO = 500 V
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
RIO
109
Insulation resistance
VIO = 500 V, Tamb = 150 °C
(construction test only)
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
TYP.
MAX.
UNIT
Isi
130
mA
Pso
265
mW
VIOTM
6
kV
Tsi
150
°C
Note
• According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Rev. 2.1, 17-Dec-2020
Document Number: 83546
3
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
300
VIOTM
t1, t2
t3 , t4
ttest
tstres
Phototransistor
Pso (mW)
250
200
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
150
VIOWM
VIORM
100
IR-diode
Isi (mA)
50
0
0
0
25
50
75
100
125
Tsi - Safety Temperature (°C)
94 9182-2
t3 ttest t4
150
tTr = 60 s
t1
13930
t2
t stres
t
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884-5)
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
tr
3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
tf
4.7
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
ton
6
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 k,
(see figure 4)
ton
9
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 k,
(see figure 4)
toff
10
μs
IF
MIN.
+5V
IF
0
IF
I C = 2 mA; adjusted through
input amplitude
R G = 50 Ω
tp
= 0.01
T
TYP.
MAX.
UNIT
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
t p = 50 µs
Channel I
Channel II
50 Ω
Channel I
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Channel II
100 Ω
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
95 10804
Fig. 3 - Test Circuit, Non-Saturated Operation
Rev. 2.1, 17-Dec-2020
Fig. 4 - Test Circuit, Saturated Operation
Document Number: 83546
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For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
IF
0
tp
IC
t
100 %
90 %
10 %
0
tr
td
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
t
tf
t off
ts
t on
ts
tf
t off (= ts + tf)
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
300
Coupled device
250
200
Phototransistor
150
IR diode
100
50
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
16736
CTRrel - Relative Current Transfer Ratio
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
1.0
0.6
0.4
0.2
0
-40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
16737
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
10 000
ICEO - Collector Dark Current,
with open Base (nA)
1000
IF - Forward Current (mA)
VCE = 5 V,
IF = 5 mA
0.8
100
10
1
96 11862
0.4
0.8
1.2
1.6
Fig. 7 - Forward Current vs. Forward Voltage
Rev. 2.1, 17-Dec-2020
10
1
0
2.0
VF - Forward Voltage (V)
10 V
100
0.1
0
VCE = 30 V
1000
16738
20
40
60
80
100
120
Tamb - Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Document Number: 83546
5
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
CTR - Current Transfer Ratio (%)
100
IC - Collector Current (mA)
VCE = 5 V
10
1
0.1
0.01
0.1
1
20 mA
IF = 50 mA
10 mA
5 mA
2 mA
1 mA
0.1
0.1
95 10985
1
10
VCEsat - Collector Emitter
Saturation Voltage (V)
20 % used
0.8
CTR = 50 %
used
0.6
0.4
0.2
10 % used
0
100
IC - Collector Current (mA)
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
Rev. 2.1, 17-Dec-2020
100
10
10
8
Non-saturated
operation
VS = 5 V
RL = 100 Ω
ton
6
toff
4
2
0
0
2
4
6
8
IC - Collector Current (mA)
Fig. 14 - Turn-on/off Time vs. Collector Current
ton/toff - Turn-On / Turn-Off Time (µs)
1.0
10
1
IF - Forward Current (mA)
95 11030
Fig. 11 - Collector Current vs. Collector Emitter Voltage
1
1
0.1
100
VCE - Collector Emitter Voltage (V)
95 11028
10
Fig. 13 - Current Transfer Ratio vs. Forward Current
ton/toff - Turn-On/Turn-Off Time (µs)
IC - Collector Current (mA)
100
1
100
95 11029
Fig. 10 - Collector Current vs. Forward Current
10
VCE = 5 V
100
10
IF - Forward Current (mA)
95 11027
1000
50
Saturated operation
VS = 5 V
RL = 1 kΩ
40
30
toff
20
10
ton
0
0
95 11031
5
10
15
20
IF - Forward Current (mA)
Fig. 15 - Turn-on/off Time vs. Forward Current
Document Number: 83546
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For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6.5 ± 0.3
Pin 1 identifier
7.62 to 9.5
4.58 ± 0.3
7.62 typ.
0.4 ± 0.1
3.5 ± 0.3 4.5 ± 0.3
2.8 ± 0.5
0° to 15°
1.3 ± 0.1
0.25 typ.
0.5 ± 0.1
2.54 typ.
TCET1110G type
7.62 typ.
3.5 ± 0.3
0.1 min.
2.7 min.
i178027-19
10.16 typ.
PACKAGE MARKING (example)
ET1110
V YWW 24
Rev. 2.1, 17-Dec-2020
Document Number: 83546
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For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000