TCET2100

TCET2100, TCET4100 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel) FEATURES Dual Channel • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Low temperature coefficient of CTR 16 Pin • Rated impulse voltage (transient overvoltage) VIOTM = 10 kV peak • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 175 8 Pin Quad Channel E C i179012-1 • Thickness through insulation ≥ 0.4 mm C 1 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC A AGENCY APPROVALS 17198-1 V D E C • UL1577, file no. E52744 system code H, double protection • CSA 22.2 bulletin 5A, double protection • DIN EN 60747-5-5 (VDE 0884) DESCRIPTION • FIMKO The TCET2100/TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, available in 8 pin (dual channel) and 16 pin (quad channel) package. ORDERING INFORMATION DIP T C E T # 1 0 0 PART NUMBER 7.62 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, VDE 50 to 600 DIP-8, dual channel TCET2100 DIP-16, quad channel TCET4100 Document Number: 83727 Rev. 1.5, 07-Oct-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 1 TCET2100, TCET4100 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel) ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA tp ≤ 10 μs Forward surge current IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C VRMS COUPLER Isolation test voltage (RMS) t=1s VISO 5300 VIORM 890 VP Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 150 °C Tsld 260 °C Isolation voltage 2 mm from case, t ≤ 10 s Soldering temperature (2) Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = ± 50 mA VR = 0 V, f = 1 MHz MIN. TYP. MAX. UNIT VF 1.25 1.6 V Cj 50 INPUT Forward voltage Junction capacitance pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 70 Emitter collector voltage IE = 100 μA VECO 7 VCE = 20 V, IF = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Collector emitter cut-off current V V 10 100 nA 0.3 V COUPLER Coupling capacitance Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. IC/IF VCE = 5 V, IF = 5 mA CTR 50 www.vishay.com 2 TYP. For technical questions, contact: optocoupleranswers@vishay.com MAX. UNIT 600 % Document Number: 83727 Rev. 1.5, 07-Oct-10 TCET2100, TCET4100 Optocoupler, Phototransistor Output, Vishay Semiconductors (Dual, Quad Channel) MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 275 mA Pdiss 400 mW VIOTM 10 kV Tsi 175 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note • According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.669 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 10 kV Vpd 1.424 kV Ptot - Total Power Dissipation (mW) Insulation resistance TYP. MAX. UNIT kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM 150 100 IR-diode Isi (mA) 50 0 94 9182 0 0 25 50 75 100 125 150 13930 t3 ttest t4 t1 tTr = 60 s Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 83727 Rev. 1.5, 07-Oct-10 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 3 TCET2100, TCET4100 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel) SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) MIN. TYP. MAX. UNIT td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10 μs IF IF +5V IF 0 0 I C = 2 mA; adjusted through input amplitude tp IC t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 100 Ω tr td Fig. 3 - Test Circuit, Non-Saturated Operation ts t on tp td tr t on (= td + tr) 95 10804 IF 10 % 0 Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 4 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83727 Rev. 1.5, 07-Oct-10 TCET2100, TCET4100 Optocoupler, Phototransistor Output, Vishay Semiconductors (Dual, Quad Channel) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 ICEO - Collector Dark Current, with Open Base (nA) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 1000 100 10 1 0 0 40 80 0 120 Tamb - Ambient Temperature (°C) 96 11700 100 75 100 IC - Collector Current (mA) IF - Forward Current (mA) 50 Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 10 1 0 0.8 0.4 1.2 1.6 2.0 VF - Forward Voltage (V) 96 11862 VCE = 5 V 10 1 0.1 0.01 0.1 0.1 1 100 10 IF - Forward Current (mA) 95 11027 Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Current vs. Forward Current 100 2.0 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio 25 Tamb - Ambient Temperature (°C) 95 11026 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0 - 25 95 11025 VCE = 20 V IF = 0 0 25 50 75 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83727 Rev. 1.5, 07-Oct-10 0.1 95 10985 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 5 TCET2100, TCET4100 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel) ton/toff - Turn-on/Turn-off Time (µs) 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 1 10 CTR - Current Transfer Ratio (%) 30 toff 20 10 ton 0 0 95 11031 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Saturated operation VS = 5 V RL = 1 kΩ 40 100 IC - Collector Current (mA) 95 11028 50 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-on/off Time vs. Forward Current 1000 VCE = 5 V 100 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11029 ton/toff- Turn-on /Turn-off Time (µs) Fig. 13 - Current Transfer Ratio vs. Forward Current 10 8 Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 0 95 11030 2 4 6 8 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current www.vishay.com 6 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83727 Rev. 1.5, 07-Oct-10 TCET2100, TCET4100 Optocoupler, Phototransistor Output, Vishay Semiconductors (Dual, Quad Channel) PACKAGE DIMENSIONS in millimeters Pin one ID 4 3 2 1 5 6 7 8 6.48 6.81 ISO method A 9.63 9.91 0.76 1.14 7.62 typ. 0.79 4° typ. 3.30 3.81 1.27 10° 0.51 0.89 0.46 0.56 2.79 3.30 3° to 9° 5.84 6.35 0.20 0.30 2.54 typ. i178006 Pin one ID 8 7 6 5 4 3 2 1 6.48 6.81 9 10 11 12 13 14 15 16 ISO method A 19.77 20.07 0.76 1.14 0.79 7.62 typ. 3.30 3.81 4° 0.46 0.56 0.51 0.89 2.54 typ. 1.27 10° typ. 3° to 9° 2.79 3.30 5.84 6.35 0.20 0.30 i178007 PACKAGE MARKING TCETxxxx V YWW 24 21764-89 Document Number: 83727 Rev. 1.5, 07-Oct-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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