TCMT1115

Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package C E FEATURES 4 3 • Low profile package (half pitch) • AC isolation test voltage 3750 VRMS • Low coupling capacitance of typical 0.3 pF • Current transfer ratio (CTR) selected into groups 16467-5 1 2 A C • Low temperature coefficient of CTR • Wide ambient temperature range • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 16467-4 V D E AGENCY APPROVALS DESCRIPTION • UL1577, file no. E76222 system code M The TCMT111X series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin package. • cUL CSA22.2 bulletin 5A The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. • BSI EN 60065:2002, EN 60950:2000 certificate 8986/8987 • DIN EN 60747-5-2 (VDE 0884) APPLICATIONS • Programmable logic controllers • Modems • Answering machines • General applications ORDERING INFORMATION SMD-# T C M T 1 1 1 # 7 mm PART NUMBER AGENCY CERTIFIED/ PACKAGE CTR (%) 5 mA 10 mA 40 to80 5 mA UL, cUL, BSI, VDE 50 to 600 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 SOP-4 TCMT1110 TCMT1111 TCMT1112 TCMT1113 TCMT1114 TCMT1115 TCMT1116 TCMT1117 TCMT1118 TCMT1119 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 50 mA Forward surge current Power dissipation Junction temperature Rev. 1.5, 21-Jan-12 tP  10 μs IFSM 1.5 A Pdiss 80 mW Tj 125 °C Document Number: 81862 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V OUTPUT Collector current Collector peak current IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C VISO 3750 VRMS tp/T = 0.5, tp  10 ms Power dissipation Junction temperature COUPLER AC isolation test voltage (RMS) Related to standard climate 23/50 DIN 50014 Total power dissipation Ptot 230 mW Operating ambient temperature range Tamb - 40 to + 110 °C Storage temperature range Tstg - 40 to + 125 °C Soldering temperature (1) Tsld 260 °C Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.4 UNIT INPUT Forward voltage IF = 5 mA VF 1.15 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 100 μA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.1 Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100  fc 100 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector dark current 100 nA 0.3 V COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. VCE = 5 V, IF = 5 mA TCMT1110 CTR 50 600 % TCMT1111 CTR 40 80 % TCMT1112 CTR 63 125 % TCMT1113 CTR 100 200 % TCMT1114 CTR 160 320 % TCMT1115 CTR 50 150 % TCMT1116 CTR 100 300 % TCMT1117 CTR 80 160 % TCMT1118 CTR 130 260 % TCMT1119 CTR 200 400 % VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 5 mA Rev. 1.5, 21-Jan-12 TYP. MAX. UNIT Document Number: 81862 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) MIN. TYP. MAX. UNIT td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) tr 3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) tf 4 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) ts 0 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) ton 5 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) toff 3 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) toff 18 μs IF IF +5V IF 0 0 I C = 2 mA; adjusted through input amplitude tp IC t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 100 Ω tr td Fig. 1 - Test Circuit, Non-Saturated Operation ts t on tp td tr t on (= td + tr) 95 10804 IF 10 % 0 Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Rev. 1.5, 21-Jan-12 Document Number: 81862 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification SYMBOL MIN. IEC 68 part 1 TYP. MAX. UNIT 40/110/21 Comparative tracking index CTI 175 Peak transient overvoltage VIOTM 6000 399 V Peak insulation voltage VIORM 707 V Safety rating - power output PSO 265 mW Safety rating - input current ISI 130 mA Safety rating - temperature TSI 150 °C Creepage distance 5 mm Clearance distance 5 mm 0.4 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 Note • As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 40 80 120 Tamb - Ambient Temperature (°C) 96 11700 CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) VCE = 5 V IF = 5 mA 1.5 1.0 0.5 0 - 25 1000 0 25 50 75 Tamb - Ambient Temperature (°C) 95 11025 Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature 10 000 ICEO - Collector Dark Current, with Open Base (nA) IF - Forward Current (mA) 2.0 100 10 1 VCE = 20 V IF = 0 1000 100 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 96 11862 Fig. 5 - Forward Current vs. Forward Voltage Rev. 1.5, 21-Jan-12 0 95 11026 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 7 - Collector Dark Current vs. Ambient Temperature Document Number: 81862 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors IC - Collector Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 1 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 95 10985 VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current Rev. 1.5, 21-Jan-12 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 5 10 15 20 IF - Forward Current (mA) 95 11031 Fig. 12 - Turm-on/off Time vs. Forward Current 10 8 Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 100 IC - Collector Current (mA) 100 10 50 0 ton/toff - Turn-On/Turn-Off Time (µs) 1.0 10 1 IF - Forward Current (mA) Fig. 11 - Current Transfer Ratio vs. Forward Current Fig. 9 - Collector Current vs. Collector Emitter Voltage 95 11028 1 0.1 100 10 VCE - Collector Emitter Voltage (V) 1 10 ton/toff - Turn-On/Turn-Off Time (µs) IC - Collector Current (mA) 100 1 100 95 11029 Fig. 8 - Collector Current vs. Forward Current 0.1 VCE = 5 V 100 10 IF - Forward Current (mA) 95 11027 1000 CTR - Current Transfer Ratio (%) 100 0 95 11030 2 4 6 8 IC - Collector Current (mA) Fig. 13 - Turn-on/off Time vs. Collector Current Document Number: 81862 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Recommended for New Designs TCMT111. Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters + 0.3 7 - 0.4 4.4 ± 0.2 1.9 0.1 ± 0.1 2.5 + 0.3 0.7 - 0.4 0.45 ± 0.1 1.27 nom. 4 0.15 +- 0.10 0.05 2.1 max. 2.8 max. 3 1.27 0.9 Possible footprint 5 7.6 1 2 technical drawings according to DIN specifications Pin no. 1 identification 16283 PACKAGE MARKING (example of TCMT1110) MT1110 V YWW M 68 Rev. 1.5, 21-Jan-12 Document Number: 81862 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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