TEMD7000X01

TEMD7000X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering TEMD7000X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm2 sensitive area detecting visible and near infrared radiation. • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) TEMD7000X01 3 ± 60 350 to 1120 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient Rev. 1.6, 18-Feb-15 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb -40 to +100 °C °C Tstg -40 to +100 Acc. reflow solder profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 270 K/W Document Number: 81951 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD7000X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 4 pF VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. TYP. MAX. UNIT 1 V 60 V 1 3 nA Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo -2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 3 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira Reverse light current 2.4 3 ϕ Angle of half sensitivity 3.6 μA ± 60 deg Wavelength of peak sensitivity λp 900 nm Range of spectral bandwidth λ0.1 350 to 1120 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 100 80 Tamb - Ambient Temperature (°C) 0.1 VR = 5 V λ = 950 nm 0.01 0.001 0.01 0.1 1 10 Ee - Irradiance (mW/cm2 ) 21535 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 100 1.4 Ira - Reverse Light Current (µA) Ira, rel - Relative Reverse Light Current 1 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 18-Feb-15 λ = 950 nm 10 1 mW/cm2 1 0.1 17026 1 10 100 VR - Reverse Voltage Fig. 4 - Reverse Light Current vs. Reverse Voltage Document Number: 81951 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD7000X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE CD - Diode Capacitance (pF) 8 300 Temperature (°C) E=0 f = 1 MHz 4 2 200 max. 30 s 150 max. ramp down 6 °C/s 50 1 0.1 10 max. ramp up 3 °C/s 0 100 0 VR- Reverse Voltage (V) 19841 Fig. 5 - Diode Capacitance vs. Reverse Voltage 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK 1.0 S(λ)rel - Relative Spectral Sensitivity max. 100 s max. 120 s 100 0 94 8430 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 6 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 0.9 0.8 0.7 0.6 FLOOR LIFE 0.5 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 0.4 0.3 Floor life: 168 h 0.2 Conditions: Tamb < 30 °C, RH < 60 % 0.1 Moisture sensitivity level 3, according to J-STD-020. 0 400 500 600 700 800 900 1000 1100 DRYING λ - Wavelength (nm) In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Sensitivity 30° 80° 0.6 0.4 0.2 0 94 8013 Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Rev. 1.6, 18-Feb-15 Document Number: 81951 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD7000X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 20018 Rev. 1.6, 18-Feb-15 Document Number: 81951 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD7000X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 21501 Rev. 1.6, 18-Feb-15 Document Number: 81951 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD7000X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.6, 18-Feb-15 technical drawings according to DIN specifications Document Number: 81951 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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