TEMT7000X01

TEMT7000X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface-mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° 20043 • Package matched with IR emitter series VSMB1940X01 • Floor life: 168 h, MSL 3, according to J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION TEMT7000X01 is a high speed silicon NPN epitaxial planar phototransistor in a miniature 0805 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Detector in automotive applications • Light sensors • Radiation sensors PRODUCT SUMMARY COMPONENT Ica (μA) at Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V ϕ (°) λ0.1 (nm) TEMT7000X01 225 to 675 ± 60 470 to 1090 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V Collector current Power power dissipation Tamb ≤ 55 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction-to-ambient UNIT IC 20 mA PV 100 mW Tj 100 °C Tamb -40 to +100 °C °C Tstg -40 to +100 According to reflow profile Fig. 8 Tsd 260 °C According to J-STD-051 RthJA 270 K/W Document Number: 81961 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 TEMT7000X01 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21331-1 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IC = 0.1 mA VCEO 20 - - V VCE = 5 V, E = 0 ICEO - 1 100 nA VCE = 0 V, f = 1 MHz, E = 0 CCEO - 25 - pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V ICA 225 450 675 μA Angle of half sensitivity ϕ - ± 60 - ° Wavelength of peak sensitivity λp - 850 - nm Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current λ0.1 - 470 to 1090 - nm IC = 0.05 mA VCEsat - - 0.4 V Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V TkIca - 1.1 - %/K Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica UNIT BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Ica - Collector Light Current (mA) ICE0 - Collector Dark Current (nA) 10 000 IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1 0 20594 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature 1 0.1 VCE = 5 V 0.01 0.001 0.01 21551-1 0.1 1 10 Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance Document Number: 81961 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 TEMT7000X01 www.vishay.com Vishay Semiconductors 0° 10° 20° 100 30° Ie, rel - Relative Sensitivity 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7  - Angular Displacement tr / tf - Rise / Fall Time (µs) 90 80° 0 0 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) 20599 0.6 0.4 0.2 0 948013-4 Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 6 - Relative Sensitivity vs. Angular Displacement 2.0 Ica rel - Relative Collector Current S ()rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 500 600 700 800 900 1.0 0.8 948239-1 Max. 260 °C 255 °C 240 °C 217 °C 245 °C 1st line 2nd line Max. 30 s 150 Max. 100 s Max. ramp down 6 °C/s 100 10 0 150 200 250 300 Time (s) 19841 100 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-033D. DRYING Max. ramp up 3 °C/s 100 80 FLOOR LIFE 1000 200 50 60 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 10000 Max. 120 s 40 Fig. 7 - Relative Collector Current vs. Ambient Temperature Axis Title 100 20 Tamb - Ambient Temperature (°C) DRYPACK 300 2nd line Temperature (°C) 1.2 0  - Wavelength (nm) REFLOW SOLDER PROFILE 0 1.4 1000 1100 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 50 VCE = 5 V, Ee = 1 mW/cm2,  = 950 nm 1.6 0.6 400 21555 250 1.8 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Document Number: 81961 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 TEMT7000X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 19757 Document Number: 81961 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 TEMT7000X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Quantity per reel: 3000 pcs 20690 Document Number: 81961 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 TEMT7000X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 technical drawings according to DIN specifications Document Number: 81961 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.3, 31-Jul-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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