TEMT7100ITX01

TEMT7100ITX01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • Enhanced operating temperature range:  top = -40 °C to +110 °C • High photo sensitivity • Daylight blocking filter matches with 830 nm to 950 nm IR emitters • Angle of half sensitivity:  = ± 60° 20043-1 • Package matched with IR emitter series VSMB1940X01 • Floor life: 72 h, MSL 4, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TEMT7100ITX01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT TEMT7100ITX01 IcaE (μA)  (deg) 0.5 (nm) 225 to 675 ± 60 750 to 1010 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7100ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V Collector current Power power dissipation Tamb  55 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 03-Jun-14 UNIT IC 20 mA PV 100 mW Tj 110 °C Tamb -40 to +110 °C °C Tstg -40 to +110 Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 270 K/W Document Number: 84257 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMT7100ITX01 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 270 K/W 40 20 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. 20 Collector emitter breakdown voltage Collector light current MAX. UNIT 100 nA IC = 0.1 mA VCEO VCE = 5 V, E = 0 ICEO 1 VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V ICA Collector dark current Collector emitter capacitance TYP. V 225 pF 450 675 μA Angle of half sensitivity  ± 60 deg Wavelength of peak sensitivity p 870 nm 0.5 750 to 1010 Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica IC = 0.05 mA VCEsat Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V TkIca nm 0.4 V 1.1 %/K BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Ica - Collector Light Current (mA) ICE0 - Collector Dark Current (nA) 10 000 IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1 0 20594 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Rev. 1.0, 03-Jun-14 1 0.1 VCE = 5 V 0.01 0.001 0.01 21551 0.1 1 10 Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance Document Number: 84257 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMT7100ITX01 www.vishay.com Vishay Semiconductors 0° 100 20° 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Sensitivity 30° 90 tr/tf - Rise/Fall Time (µs) 10° 80° 0 0 250 0.6 500 750 1000 1250 1500 1750 2000 0.4 0.2 0 94 8013 IC - Collector Current (µA) 20599 Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 2.0 Ica rel - Relative Collector Current S(λ)rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 600 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 700 800 900 1000 1100 λ - Wavelength (nm) 21552 0 94 8239 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength REFLOW SOLDER PROFILE 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) 1.8 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label:  Floor life: 72 h  Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 4, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 FLOOR LIFE 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.0, 03-Jun-14 Document Number: 84257 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMT7100ITX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 19757 Rev. 1.0, 03-Jun-14 Document Number: 84257 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMT7100ITX01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Quantity per reel: 3000 pcs 20690 Rev. 1.0, 03-Jun-14 Document Number: 84257 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMT7100ITX01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.0, 03-Jun-14 technical drawings according to DIN specifications Document Number: 84257 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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