TEPT5600

TEPT5600 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 20° 94 8390 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DESCRIPTION • Replacement of cadmium sulfide (CdS) photoresistors TEPT5600 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. • Ambient light sensor PRODUCT SUMMARY COMPONENT TEPT5600 IPCE (μA) ϕ (deg) λ0.5 (nm) 630 ± 20 440 to 800 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk. Label with IPCE group on each bulk. Specifications of group A/B/C/D see table “Type Dedicated Characteristics” T-1¾ TEPT5600 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector emitter voltage TEST CONDITION VCEO 6 V Emitter collector voltage VECO 1.5 V IC 20 mA PV 100 mW Tj 100 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 3 s, 2 mm distance to package Tsd 260 °C J-STD-051, soldered on PCB RthJA 230 K/W Collector current Power dissipation Tamb ≤ 55 °C Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.9, 26-Nov-14 Document Number: 84768 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5600 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 230 K/W 40 20 0 0 21333 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance TEST CONDITION SYMBOL MIN. 6 TYP. MAX. UNIT 50 nA IC = 0.1 mA VCEO VCE = 5 V, E = 0 ICEO 3 16 V VCE = 0 V, f = 1 MHz, E = 0 CCEO Ev = 20 lx, CIE illuminant A, VCE = 5 V IPCE Ev = 100 lx, CIE illuminant A, VCE = 5 V IPCE 630 μA Angle of half sensitivity ϕ ± 20 deg Wavelength of peak sensitivity λp 570 nm λ0.5 440 to 800 nm Photo current Range of spectral bandwidth 25 pF 226.8 μA TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Photo current TEST CONDITION EV = 20 lx, CIE illuminant A, VCE = 5 V, Tamb = 25 °C BINNED GROUP SYMBOL MIN. MAX. UNIT A IPCE 25 50.4 μA B IPCE 41.7 84 μA C IPCE 69.4 140 μA D IPCE 113.4 226.8 μA Note • Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly. Rev. 1.9, 26-Nov-14 Document Number: 84768 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5600 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 VCE = 5 V 10 -7 IPCE - Photo Current (µA) ICEO - Collector Dark Current (A) 10 -6 10 -8 10 -9 10 -10 10 -11 1000 100 10 -12 10 10 -13 -40 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 19758 100 10 20204 Fig. 2 - Collector Dark Current vs. Ambient Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 VCE = 5 V, white LED -40 19759 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 25 f = 1 MHz 20 15 10 5 0 0.1 19762 Fig. 3 - Relative Photo Current vs. Ambient Temperature 1.0 10.0 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 1.0 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 S(λ)rel - Relative Spectral Sensitivity IPCE - Photo Current (µA) CCE0 - Collector Emitter Capacitance (pF) IPCE rel - Relative Photo Current 2.0 0 1000 Fig. 5 - Photo Current vs. Illuminance 2.2 0.4 0.2 100 EV - Illuminance (lx) 200 lx 100 lx 50 lx 20 lx 0 20205 1 2 3 4 5 VCE - Collector Emitter Voltage (V) Fig. 4 - Photo Current vs. Collector Emitter Voltage Rev. 1.9, 26-Nov-14 20019 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 400 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Document Number: 84768 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5600 www.vishay.com 0° Vishay Semiconductors 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Srel - Relative Sensitivity 30° 80° 0.6 0.4 0.2 0 94 8624 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C ± 0.15 Chip position R 2.45 (sphere) ± 0.15 7.6 ± 0.3 8.6 + 0.2 - 0.1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 Area not plane 0.5 + 0.15 1.5 ± 0.25 1 0.8 < 0.7 34.8 ± 0.5 11.8 ± 0.3 (4.3) Ø5 E 2.54 nom. Drawing-No.: 6.544-5185.03-4 technical drawings according to DIN specifications Issue:1; 19.06.06 21981 Rev. 1.9, 26-Nov-14 Document Number: 84768 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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