TGL41-6.8A thru TGL41-200A
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Vishay General Semiconductor
TRANSZorb® Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Available in unidirectional polarity only
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
GL41 (DO-213AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PRIMARY CHARACTERISTICS
VBR unidirectional
6.45 V to 210 V
VWM
5.8 V to 171 V
PPPM
400 W, 200 W
PD
1.0 W
IFSM
40 A
TJ max.
150 °C
Polarity
Unidirectional
Package
GL41 (DO-213AB)
MECHANICAL DATA
Case: GL41 (DO-213AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: blue band denotes the cathode which is positive
with respect to the anode under normal TVS operation
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Power dissipation on infinite heatsink at TL = 75 °C
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Peak forward surge current, 8.3 ms half sine-wave unidirectional only
(2)
Maximum instantaneous forward voltage at 25 A for unidirectional only
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
400
W
PD
1.0
W
IPPM
See next table
A
IFSM
40
A
VF
3.5
V
TJ, TSTG
-55 to +150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 200 W above 91 V
A
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Revision: 17-Sep-2021
Document Number: 88403
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
TGL41-6.8A
TGL41-7.5A
TGL41-8.2A
TGL41-9.1A
TGL41-10A
TGL41-11A
TGL41-12A
TGL41-13A
TGL41-15A
TGL41-16A
TGL41-18A
TGL41-20A
TGL41-22A
TGL41-24A
TGL41-27A
TGL41-30A
TGL41-33A
TGL41-36A
TGL41-39A
TGL41-43A
TGL41-47A
TGL41-51A
TGL41-56A
TGL41-62A
TGL41-68A
TGL41-75A
TGL41-82A
TGL41-91A
TGL41-100A
TGL41-110A
TGL41-120A
TGL41-130A
TGL41-150A
TGL41-160A
TGL41-170A
TGL41-180A
TGL41-200A
BREAKDOWN
VOLTAGE
VBR (1)
(V)
MIN.
MAX.
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(μA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR
(%/°C)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
1000
500
200
50.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
1.46
1.32
1.21
1.12
0.97
0.91
0.85
0.81
0.73
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
0.060
0.064
0.068
0.071
0.076
0.078
0.081
0.084
0.087
0.089
0.091
0.093
0.095
0.097
0.099
0.100
0.101
0.102
0.103
0.104
0.104
0.105
0.106
0.107
0.107
0.108
0.108
0.109
0.109
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
Notes
(1) Pulse test: t ≤ 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED PIN
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TGL41-6.8A-E3/96
0.134
96
1500
7" diameter plastic tape and reel
TGL41-6.8A-E3/97
0.134
97
5000
13" diameter plastic tape and reel
Revision: 17-Sep-2021
Document Number: 88403
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
Measured at
Zero Bias
1000
TGL41-6.8
TGL91A
1
TGL41-100
0.1
0.1 µs
TGL200A
Measured at Stand-Off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Uni-Directional
10
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100
1000
td - Pulse Width
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
1.00
100
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentace (%)
10 000
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
0.75
75
0.50
50
25
0.25
0
0
0
25
50
75
100
125
150
175
0
200
25
50
75
100
125
150
TJ - Initial Temerature (°C)
TL - Lead Temerature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Power Derating Curve
200
50
tr = 10 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
40
30
20
10
0
0
1.0
2.0
3.0
4.0
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Unidirectional Only
Revision: 17-Sep-2021
Document Number: 88403
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GL41 (DO-213AB)
Mounting Pad Layout
Solderable Ends
1st Band
D2
0.022 (0.56)
0.018 (0.46)
0
D2 = D1 +
- 0.008 (0.20)
0.138 (3.5)
MAX.
D1 =
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.118 (3.0)
MIN.
0.049 (1.25)
MIN.
0.238 (6.0)
REF.
1st band denotes type and positive end (cathode)
Revision: 17-Sep-2021
Document Number: 88403
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000