TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
TRANSZorb® Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
DO-213AB (GL41)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
VBR uni-directional
6.45 V to 210 V
VWM
5.8 V to 171 V
PPPM
400 W, 200 W
PD
1.0 W
MECHANICAL DATA
IFSM
40 A
TJ max.
150 °C
Case: DO-213AB (GL41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Polarity
Uni-directional
Package
DO-213 AB (GL41)
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Blue band denotes the cathode which is positive
with respect to the anode under normal TVS operation
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Power dissipation on infinite heatsink at TL = 75 °C
SYMBOL
VALUE
UNIT
PPPM
400
W
PD
1.0
W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
IPPM
See next table
A
Peak forward surge current, 8.3 ms half sine-wave uni-directional only (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A for uni-directional only
Operating junction and storage temperature range
VF
3.5
V
TJ, TSTG
- 55 to 150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 200 W above 91 V
A
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Revision: 11-Dec-12
Document Number: 88403
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (1)
(V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
TGL41-6.8A
6.45
7.14
10
5.80
TGL41-7.5A
7.13
7.88
10
6.40
TGL41-8.2A
7.79
8.61
10
7.02
TGL41-9.1A
8.65
9.55
1.0
7.78
TGL41-10A
9.5
10.5
1.0
8.55
TGL41-11A
10.5
11.6
1.0
9.40
TGL41-12A
11.4
12.6
1.0
10.2
TGL41-13A
12.4
13.7
1.0
11.1
TGL41-15A
14.3
15.8
1.0
12.8
TGL41-16A
15.2
16.8
1.0
13.6
TGL41-18A
17.1
18.9
1.0
15.3
TGL41-20A
19.0
21.0
1.0
17.1
TGL41-22A
20.9
23.1
1.0
18.8
TGL41-24A
22.8
25.2
1.0
20.5
TGL41-27A
25.7
28.4
1.0
23.1
TGL41-30A
28.5
31.5
1.0
25.6
TGL41-33A
31.4
34.7
1.0
28.2
TGL41-36A
34.2
37.8
1.0
30.8
TGL41-39A
37.1
41.0
1.0
33.3
TGL41-43A
40.9
45.2
1.0
36.8
TGL41-47A
44.7
49.4
1.0
40.2
TGL41-51A
48.5
53.6
1.0
43.6
TGL41-56A
53.2
58.8
1.0
47.8
TGL41-62A
58.9
65.1
1.0
53.0
TGL41-68A
64.6
71.4
1.0
58.1
TGL41-75A
71.3
78.8
1.0
64.1
TGL41-82A
77.9
86.1
1.0
70.1
TGL41-91A
86.5
95.5
1.0
77.8
TGL41-100A
95.0
105
1.0
85.5
TGL41-110A
105
116
1.0
94.0
TGL41-120A
114
126
1.0
102
TGL41-130A
124
137
1.0
111
TGL41-150A
143
158
1.0
128
TGL41-160A
152
168
1.0
136
TGL41-170A
162
179
1.0
145
TGL41-180A
171
189
1.0
154
TGL41-200A
190
210
1.0
171
Notes
(1) Pulse test: t 50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(μA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICENT
OF VBR
(%/°C)
1000
500
200
50.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
1.46
1.32
1.21
1.12
0.97
0.91
0.85
0.81
0.73
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
0.060
0.064
0.068
0.071
0.076
0.078
0.081
0.084
0.087
0.089
0.091
0.093
0.095
0.097
0.099
0.100
0.101
0.102
0.103
0.104
0.104
0.105
0.106
0.107
0.107
0.108
0.108
0.109
0.109
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
ORDERING INFORMATION (Example)
PREFERRED PIN
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TGL41-6.8A-E3/96
0.134
96
1500
7" diameter plastic tape and reel
TGL41-6.8A-E3/97
0.134
97
5000
13" diameter plastic tape and reel
Revision: 11-Dec-12
Document Number: 88403
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
Measured at
Zero Bias
1000
TGL41-6.8
TGL91A
1
TGL41-100
0.1
0.1 µs
1.0 µs
TGL200A
10 µs
100 µs
1.0 ms
Measured at Stand-Off
Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 ms
1
10
td - Pulse Width
1000
Fig. 4 - Typical Junction Capacitance
100
1.00
PD - Power Dissipation (W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentace (%)
100
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
75
0.75
50
0.50
25
0
0.25
0
0
25
50
75
100
125
150
175
200
0
TJ - Initial Temerature (°C)
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 11-Dec-12
3.0
75
100
125
150
175
200
4.0
50
Peak Forward Surge Current (A)
Peak Value
IPPM
50
Fig. 5 - Power Derating Curve
150
tr = 10 µs
25
TL - Lead Temerature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
IPPM - Peak Pulse Current, % IRSM
Uni-Directional
10
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Document Number: 88403
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AB (GL41)
Mounting Pad Layout
Solderable Ends
1st Band
D2
0.022 (0.56)
0.018 (0.46)
0
D2 = D1 +
- 0.008 (0.20)
0.138 (3.5)
MAX.
D1 =
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.118 (3.0)
MIN.
0.049 (1.25)
MIN.
0.238 (6.0)
REF.
1st Band Denotes Type and Positive End (Cathode)
Revision: 11-Dec-12
Document Number: 88403
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000
