TGL41-36A-E3/96

TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb® Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated pallet chip junction • Available in unidirectional polarity only • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C GL41 (DO-213AB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. PRIMARY CHARACTERISTICS VBR unidirectional 6.45 V to 210 V VWM 5.8 V to 171 V PPPM 400 W, 200 W PD 1.0 W IFSM 40 A TJ max. 150 °C Polarity Unidirectional Package GL41 (DO-213AB) MECHANICAL DATA Case: GL41 (DO-213AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: blue band denotes the cathode which is positive with respect to the anode under normal TVS operation MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Power dissipation on infinite heatsink at TL = 75 °C Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Peak forward surge current, 8.3 ms half sine-wave unidirectional only (2) Maximum instantaneous forward voltage at 25 A for unidirectional only Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 400 W PD 1.0 W IPPM See next table A IFSM 40 A VF 3.5 V TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 200 W above 91 V A (2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum Revision: 17-Sep-2021 Document Number: 88403 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE TGL41-6.8A TGL41-7.5A TGL41-8.2A TGL41-9.1A TGL41-10A TGL41-11A TGL41-12A TGL41-13A TGL41-15A TGL41-16A TGL41-18A TGL41-20A TGL41-22A TGL41-24A TGL41-27A TGL41-30A TGL41-33A TGL41-36A TGL41-39A TGL41-43A TGL41-47A TGL41-51A TGL41-56A TGL41-62A TGL41-68A TGL41-75A TGL41-82A TGL41-91A TGL41-100A TGL41-110A TGL41-120A TGL41-130A TGL41-150A TGL41-160A TGL41-170A TGL41-180A TGL41-200A BREAKDOWN VOLTAGE VBR (1) (V) MIN. MAX. 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 1000 500 200 50.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 1.46 1.32 1.21 1.12 0.97 0.91 0.85 0.81 0.73 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 0.060 0.064 0.068 0.071 0.076 0.078 0.081 0.084 0.087 0.089 0.091 0.093 0.095 0.097 0.099 0.100 0.101 0.102 0.103 0.104 0.104 0.105 0.106 0.107 0.107 0.108 0.108 0.109 0.109 0.110 0.110 0.110 0.111 0.111 0.111 0.111 0.111 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (2) All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TGL41-6.8A-E3/96 0.134 96 1500 7" diameter plastic tape and reel TGL41-6.8A-E3/97 0.134 97 5000 13" diameter plastic tape and reel Revision: 17-Sep-2021 Document Number: 88403 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 Measured at Zero Bias 1000 TGL41-6.8 TGL91A 1 TGL41-100 0.1 0.1 µs TGL200A Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional 10 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 1 10 100 1000 td - Pulse Width VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 1.00 100 PD - Power Dissipation (W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentace (%) 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 0.75 75 0.50 50 25 0.25 0 0 0 25 50 75 100 125 150 175 0 200 25 50 75 100 125 150 TJ - Initial Temerature (°C) TL - Lead Temerature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Power Derating Curve 200 50 tr = 10 µs Peak Value IPPM 100 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 175 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 20 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Unidirectional Only Revision: 17-Sep-2021 Document Number: 88403 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GL41 (DO-213AB) Mounting Pad Layout Solderable Ends 1st Band D2 0.022 (0.56) 0.018 (0.46) 0 D2 = D1 + - 0.008 (0.20) 0.138 (3.5) MAX. D1 = 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185 (4.7) 0.118 (3.0) MIN. 0.049 (1.25) MIN. 0.238 (6.0) REF. 1st band denotes type and positive end (cathode) Revision: 17-Sep-2021 Document Number: 88403 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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